APT50GN60B(G)
600V
TYPICAL PERFORMANCE CURVES
APT50GN60B
APT50GN60BG*
®
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive
design and minimizes losses.
TO
-2
47
G
C
• 600V Field Stop
•
•
•
•
Trench Gate: Low VCE(on)
Easy Paralleling
6µs Short Circuit Capability
175°C Rated
E
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT50GN60B(G)
VCES
Collector-Emitter Voltage
600
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current
I C2
Continuous Collector Current @ TC = 110°C
I CM
Pulsed Collector Current
SSOA
PD
TJ,TSTG
TL
1
8
@ TC = 25°C
UNIT
Volts
107
64
Amps
150
@ TC = 175°C
150A @ 600V
Switching Safe Operating Area @ TJ = 175°C
366
Total Power Dissipation
Operating and Storage Junction Temperature Range
Watts
-55 to 175
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
V(BR)CES
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA)
600
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
RG(int)
(VCE = VGE, I C = 800µA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 50A, Tj = 125°C)
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C)
TYP
MAX
5.0
5.8
6.5
1.05
1.45
1.85
25
2
600
N/A
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
TBD
Gate-Emitter Leakage Current (VGE = ±20V)
Intergrated Gate Resistor
Volts
1.7
2
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C)
Units
nA
Ω
7-2005
MIN
Rev B
Characteristic / Test Conditions
050-7612
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT50GN60B(G)
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
3
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
SSOA
SCSOA
td(on)
tr
td(off)
tf
Eon1
9.0
VGE = 15V
325
VGE =
µs
20
25
ns
230
100
1185
TJ = +25°C
µJ
1275
1565
Inductive Switching (125°C)
20
VCC = 400V
25
Current Rise Time
Turn-off Delay Time
VGE = 15V
260
RG = 4.3Ω 7
140
1205
I C = 50A
Current Fall Time
Turn-on Switching Energy (Diode)
nC
6
6
Eon2
V
A
I C = 50A
Turn-on Switching Energy
pF
150
VCC = 400V
5
UNIT
175
7,
Inductive Switching (25°C)
4
MAX
25
RG = 4.3Ω 7
Turn-on Delay Time
Turn-off Switching Energy
Gate Charge
VCC = 360V, VGE = 15V,
Current Fall Time
Eon1
Eoff
100
TJ = 150°C, R G = 4.3Ω 7
Turn-off Delay Time
Turn-off Switching Energy
tf
f = 1 MHz
VGE = 15V
Eoff
td(off)
125
15V, L = 100µH,VCE = 600V
Current Rise Time
Turn-on Switching Energy (Diode)
tr
VGE = 0V, VCE = 25V
TJ = 175°C, R G = 4.3Ω
Turn-on Delay Time
Eon2
td(on)
3200
I C = 50A
Short Circuit Safe Operating Area
TYP
Capacitance
VCE = 300V
Switching Safe Operating Area
Turn-on Switching Energy
MIN
44
55
TJ = +125°C
ns
1850
66
µJ
2125
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.41
RθJC
Junction to Case (DIODE)
N/A
WT
Package Weight
5.9
UNIT
°C/W
gm
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
050-7612
Rev B
7-2005
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
8 Continuous current limited by package lead temperature.
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
= 15V
TJ = 175°C
100
TJ = 125°C
TJ = 25°C
60
40
TJ = -55°C
20
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
120
80
140
12V
120
11V
100
80
10V
60
9V
40
8V
30
25
20
15
10
5
0
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
140
TJ = -55°C
TJ = 25°C
120
TJ = 125°C
100
TJ = 175°C
80
60
40
20
0
FIGURE 2, Output Characteristics (TJ = 125°C)
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
160
7V
0
5
4
3
2
1
0
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
13V
160
20
0
0
15V
180
J
VCE = 120V
12
VCE = 300V
10
VCE =480V
8
6
4
2
0
14
12
10
8
6
4
2
VGE, GATE-TO-EMITTER VOLTAGE (V)
I = 50A
C
T = 25°C
14
0
50
IC = 100A
2.5
2.0
IC = 50A
1.5
IC = 25A
1.0
0.5
0
16
14
12
10
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
8
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
3.0
1.05
1.00
0.95
0.90
-50 -25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
3.0
2.5
IC = 100A
2.0
IC = 50A
1.5
IC = 25A
1.0
0.5
0
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
100 125 150 175
75
50
25
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
0
140
1.10
IC, DC COLLECTOR CURRENT(A)
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.5
100 150 200 250 300 350 400
GATE CHARGE (nC)
120
100
80
Lead Temperature
Limited
60
40
20
0
-50 -25
0 25 50 75 100 125 150 175
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
7-2005
GE
140
Rev B
V
APT50GN60B(G)
200
050-7612
160
APT50GN60B(G)
350
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
25
VGE = 15V
20
15
10
5 VCE = 400V
TJ = 25°C, 125°C
RG = 4.3Ω
L = 100 µH
0
300
250
VGE =15V,TJ=125°C
200
VGE =15V,TJ=25°C
150
100
50 VCE = 400V
RG = 4.3Ω
L = 100 µH
0
10
30
50
70
90
110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
10
30
50
70
90
110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
120
160
RG = 4.3Ω, L = 100µH, VCE = 400V
RG = 4.3Ω, L = 100µH, VCE = 400V
140
100
tf, FALL TIME (ns)
tr, RISE TIME (ns)
120
80
60
40
TJ = 125°C, VGE = 15V
100
80
TJ = 25°C, VGE = 15V
60
40
20
20
TJ = 25 or 125°C,VGE = 15V
0
0
10
30
50
70
90
110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
4000
V
= 400V
CE
V
= +15V
GE
R = 4.3Ω
EOFF, TURN OFF ENERGY LOSS (µJ)
EON2, TURN ON ENERGY LOSS (µJ)
6000
G
5000
10
30
50
70
90
110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
TJ = 125°C
4000
3000
2000
1000
TJ = 25°C
10
30
50
70
90
110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
12000
Eon2,100A
10000
Eoff,100A
8000
6000
Eon2,50A
4000
Eoff,50A
2000
0
Eoff,25A
Eon2,25A
0
TJ = 125°C
3000
2500
2000
1500
TJ = 25°C
1000
500
10
30
50
70
90
110
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
10
20
30
40
50
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
SWITCHING ENERGY LOSSES (µJ)
SWITCHING ENERGY LOSSES (µJ)
7-2005
Rev B
050-7612
J
G
6000
= 400V
V
CE
= +15V
V
GE
T = 125°C
14000
3500
0
0
16000
= 400V
V
CE
= +15V
V
GE
R = 4.3Ω
= 400V
V
CE
= +15V
V
GE
R = 4.3Ω
G
5000
Eon2,100A
4000
Eoff,100A
3000
Eoff,50A
2000
Eon2,50A
1000
0
Eoff,25A
0
Eon2,25A
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
TYPICAL PERFORMANCE CURVES
IC, COLLECTOR CURRENT (A)
1,000
500
C0es
100
Cres
50
APT50GN60B(G)
160
Cies
P
C, CAPACITANCE ( F)
5,000
140
120
100
80
60
40
20
0
10
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
100 200 300 400 500 600 700
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0.45
D = 0.9
0.35
0.7
0.30
0.25
0.5
0.20
Note:
0.15
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.40
0.3
0.10
0
t2
SINGLE PULSE
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.05
0.05
10-5
t1
10-4
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
0.198
0.115
Case temperature. (°C)
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
= min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
10
6
T = 125°C
J
T = 75°C
C
D = 50 %
V
= 400V
CE
R = 4.3Ω
max
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
G
10
20
30
40
50
60
70
80
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
7-2005
0.00332
F
Rev B
0.212
Power
(watts)
50
050-7612
RC MODEL
Junction
temp. (°C)
FMAX, OPERATING FREQUENCY (kHz)
110
APT50GN60B(G)
10%
APT40DQ60
Gate Voltage
TJ = 125°C
td(on)
Collector Current
V CE
IC
V CC
90%
tr
5%
10%
5%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
TJ = 125°C
td(off)
90%
Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
Collector
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
Rev B
7-2005
4.50 (.177) Max.
050-7612
5.38 (.212)
6.20 (.244)
0.40 (.016)
0.79 (.031) 19.81 (.780)
20.32 (.800)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
Gate
Collector
Emitter
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.