TYPICAL PERFORMANCE CURVES APT150GN60B2(G) 600V APT150GN60B2(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses. • 600V Field Stop • Trench Gate: Low VCE(on) • Easy Paralleling • Intergrated Gate Resistor: Low EMI, High Reliability C G E Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS All Ratings: TC = 25°C unless otherwise specified. MAXIMUM RATINGS Symbol Parameter APT150GN60J VCES Collector-Emitter Voltage 600 VGE Gate-Emitter Voltage ±30 I C1 Continuous Collector Current @ TC = 25°C I C2 Continuous Collector Current @ TC = 110°C I CM SSOA PD TJ,TSTG TL Pulsed Collector Current 1 UNIT Volts 220 123 2 Amps 450 Switching Safe Operating Area @ TJ = 175°C 450A @ 600V Total Power Dissipation 536 Operating and Storage Junction Temperature Range Watts -55 to 175 Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. °C 300 STATIC ELECTRICAL CHARACTERISTICS V(BR)CES Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) 600 VGE(TH) Gate Threshold Voltage VCE(ON) I CES I GES RG(int) (VCE = VGE, I C = 2400μA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 150A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) TYP MAX 5.0 5.8 6.5 1.05 1.45 1.85 25 3 600 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com μA 1000 Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Volts 1.65 3 Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) Units nA Ω 8-2008 MIN Rev A Characteristic / Test Conditions 050-7632 Symbol APT150GN60B2(G) DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic Cies Input Capacitance Coes Output Capacitance Cres Reverse Transfer Capacitance VGEP Gate-to-Emitter Plateau Voltage Qg Qge Qgc SSOA td(on) tr td(off) tf Total Gate Charge 4 Gate-Emitter Charge 300 Gate Charge 9.5 VGE = 15V 970 VCE = 300V 65 I C = 150A 510 15V, L = 100μH,VCE = 600V 110 Turn-off Delay Time VGE = 15V Current Fall Time I C = 150A 430 Eoff Turn-off Switching Energy td(on) Turn-on Delay Time 44 VCC = 400V 110 Turn-off Delay Time VGE = 15V Current Fall Time I C = 150A 480 Turn-off Switching Energy μJ 65 ns 95 RG = 1.0Ω 8 54 Turn-on Switching Energy (Diode) ns 4295 Current Rise Time Eon2 nC 8615 Inductive Switching (125°C) Turn-on Switching Energy V 8810 TJ = +25°C 7 Eon1 pF 60 RG = 1.0Ω 8 6 UNIT A Current Rise Time 5 MAX 450 44 Turn-on Switching Energy (Diode) Eoff 350 f = 1 MHz VCC = 400V Eon2 tf VGE = 0V, VCE = 25V Inductive Switching (25°C) Turn-on Switching Energy td(off) 9200 TJ = 175°C, R G = 4.3Ω 8, VGE = Turn-on Delay Time Eon1 tr TYP Capacitance Gate-Collector ("Miller ") Charge Switching Safe Operating Area MIN 8880 TJ = +125°C μJ 9735 67 5460 THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions R R θJC θJC VIsolation WT 1 Min Typ Max Unit Junction to Case (IGBT) - - 0.28 °C/W Junction to Case (DIODE) - - N/A 6.1 - RMS Voltage (50-60Hz Sinsoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight 2500 - gm Continuous current limited by case temperature. 2 Repetitive Rating: Pulse width limited by maximum junction temperature. 3 For Combi devices, Ices includes both IGBT and FRED leakages 050-7632 Rev A 8-2008 4 See MIL-STD-750 Method 3471. 5 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 6 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 7 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 8 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) Microsemi Reserves the right to change, without notice, the specifications and information contained herein. TYPICAL PERFORMANCE CURVES = 15V TJ = -55°C IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) TJ = 25°C 250 TJ = 125°C 200 TJ = 175°C 150 100 50 0 150 100 50 0 0 10V 200 150 9V 100 8V 50 7V FIGURE 2, Output Characteristics (TJ = 125°C) VGE, GATE-TO-EMITTER VOLTAGE (V) IC, COLLECTOR CURRENT (A) TJ = -55°C TJ = 25°C TJ = 125°C TJ = 175°C 200 250 16 250μs PULSE TEST<0.5 % DUTY CYCLE 250 11V 0 5 10 15 20 25 30 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics(TJ = 25°C) 300 300 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VCE, COLLECTER-TO-EMITTER VOLTAGE (V) 350 12, 13 &15V 350 300 J VCE = 120V 12 VCE = 300V 10 VCE = 480V 8 6 4 2 0 2 4 6 8 10 12 14 VGE, GATE-TO-EMITTER VOLTAGE (V) I = 150A C T = 25°C 14 0 200 TJ = 25°C. 250μs PULSE TEST <0.5 % DUTY CYCLE 3.5 IC = 300A 3.0 2.5 2.0 IC = 150A 1.5 IC = 75A 1.0 0.5 0 8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.00 0.95 0.90 0.85 0.80 0.75 0.70 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) FIGURE 7, Threshold Voltage vs. Junction Temperature IC, DC COLLECTOR CURRENT(A) VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) 1.05 3.0 2.5 IC = 300A 2.0 IC = 150A 1.5 IC = 75A 1.0 0.5 0 VGE = 15V. 250μs PULSE TEST <0.5 % DUTY CYCLE 0 25 50 75 100 125 150 175 TJ, Junction Temperature (°C) FIGURE 6, On State Voltage vs Junction Temperature 300 1.15 1.10 1200 FIGURE 4, Gate Charge VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics 4.0 400 600 800 1000 GATE CHARGE (nC) 250 200 150 100 50 0 -50 -25 0 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (°C) FIGURE 8, DC Collector Current vs Case Temperature 8-2008 GE Rev A V APT150GN60B2(G) 400 050-7632 350 APT150GN60B2(G) 600 td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns) 60 50 VGE = 15V 40 30 20 VCE = 400V 10 T = 25°C, or 125°C J RG = 1.0Ω L = 100μH 0 L = 100μH 160 TJ = 125°C, VGE = 15V 140 TJ = 25 or 125°C,VGE = 15V 250 tf, FALL TIME (ns) tr, RISE TIME (ns) 100 VCE = 400V RG = 1.0Ω 180 RG = 1.0Ω, L = 100μH, VCE = 400V 200 150 120 100 80 60 TJ = 25°C, VGE = 15V 40 50 20 0 0 40,000 18,000 V = 400V CE V = +15V GE R = 1.0Ω 35,000 G 30,000 TJ = 125°C 25,000 20,000 15,000 10,000 TJ = 25°C 5,000 30 70 110 150 190 230 270 310 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current Eon2,300A 50,000 40,000 30,000 Eoff,300A Eon2,150A 10,000 Eon2,75A 0 Eoff,75A 0 12,000 TJ = 125°C 10,000 8,000 6,000 4,000 TJ = 25°C 2,000 30 70 110 150 190 230 270 310 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current Eoff,150A 5 10 15 20 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance SWITCHING ENERGY LOSSES (μJ) J 20,000 G 14,000 40,000 V = 400V CE V = +15V GE T = 125°C 60,000 V = 400V CE V = +15V GE R = 1.0Ω 16,000 0 0 70,000 RG = 1.0Ω, L = 100μH, VCE = 400V 30 70 110 150 190 230 270 310 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current EOFF, TURN OFF ENERGY LOSS (μJ) EON2, TURN ON ENERGY LOSS (μJ) 200 400 30 70 110 150 190 230 270 310 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current SWITCHING ENERGY LOSSES (μJ) VGE =15V,TJ=25°C 30 70 110 150 190 230 270 310 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 100 8-2008 VGE =15V,TJ=125°C 300 0 300 Rev A 400 30 70 110 150 190 230 270 310 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 350 050-7632 500 V = 400V CE V = +15V GE R = 1.0Ω 35,000 Eon2,300A G 30,000 25,000 20,000 Eoff,300A 15,000 Eon2,150A 10,000 Eoff,150A 5,000 0 Eoff,75A 0 Eon2,75A 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) FIGURE 16, Switching Energy Losses vs Junction Temperature TYPICAL PERFORMANCE CURVES 20,000 IC, COLLECTOR CURRENT (A) Cies 10,000 500 P C, CAPACITANCE ( F) APT150GN60B2(G) 500 100 50 Coes 400 300 200 100 Cres 0 10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage 0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area D = 0.9 0.25 0.20 0.7 0.15 0.5 Note: 0.10 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.30 0.3 t1 t2 0.05 0 0.1 t SINGLE PULSE Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 1.0 0.00770 Power (watts) 0.184 0.300 Case temperature. (°C) FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL 5 1 T = 125°C J T = 75°C C D = 50 % = 400V V CE R = 1.0Ω f max2 = Pdiss - P cond E on2 + E off Pdiss = TJ - T C R θJC G 30 50 70 90 110 130 150 170 190 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current 8-2008 0.0964 F max = min (f max, f max2) 0.05 f max1 = t d(on) + tr + td(off) + tf Rev A Junction temp. (°C) 10 050-7632 RC MODEL FMAX, OPERATING FREQUENCY (kHz) 50 APT150GN60B2(G) Gate Voltage 10% APT100DQ60 TJ = 125°C td(on) tr IC V CC Collector Current 90% V CE 5% 10% 5% Collector Voltage A Switching Energy D.U.T. Figure 22, Turn-on Switching Waveforms and Definitions Figure 21, Inductive Switching Test Circuit 90% Gate Voltage td(off) TJ = 125°C 90% tf Collector Voltage 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions T-MAX® Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 15.49 (.610) 16.26 (.640) Collector 5.38 (.212) 6.20 (.244) 20.80 (.819) 21.46 (.845) 0.40 (.016) 0.79 (.031) 4.50 (.177) Max. 1.65 (.065) 2.13 (.084) 050-7632 Rev A 8-2008 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 2.21 (.087) 2.59 (.102) 2.87 (.113) 3.12 (.123) Gate Collector Emitter 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.