APT75GN120J
1200V
TYPICAL PERFORMANCE CURVES
APT75GN120J
®
E
E
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low VCE(ON) and are ideal for low frequency applications that require absolute minimum
conduction loss. Easy paralleling is a result of very tight parameter distribution and
a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures
extremely reliable operation, even in the event of a short circuit fault. Low gate charge
simplifies gate drive design and minimizes losses.
C
G
ISOTOP ®
• 1200V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• Intergrated Gate Resistor: Low EMI, High Reliability
S
OT
22
7
"UL Recognized"
file # E145592
C
G
E
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT75GN120J
VCES
Collector-Emitter Voltage
1200
VGE
Gate-Emitter Voltage
±30
I C1
Continuous Collector Current @ TC = 25°C
124
I C2
Continuous Collector Current @ TC = 110°C
57
I CM
SSOA
PD
TJ,TSTG
TL
Pulsed Collector Current
1
UNIT
Volts
Amps
225
@ TC = 150°C
Switching Safe Operating Area @ TJ = 150°C
225A @ 1200V
Total Power Dissipation
379
Operating and Storage Junction Temperature Range
Watts
-55 to 150
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
°C
300
STATIC ELECTRICAL CHARACTERISTICS
Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 3mA)
VGE(TH)
Gate Threshold Voltage
VCE(ON)
I CES
I GES
RG(int)
MAX
5.0
5.8
6.5
1.4
1.7
2.1
Units
1200
(VCE = VGE, I C = 3mA, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 25°C)
Collector-Emitter On Voltage (VGE = 15V, I C = 75A, Tj = 125°C)
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C)
TYP
2.0
2
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C)
Volts
100
2
Gate-Emitter Leakage Current (VGE = ±20V)
600
10
Intergrated Gate Resistor
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
TBD
nA
Ω
10-2005
V(BR)CES
MIN
Rev D
Characteristic / Test Conditions
050-7609
Symbol
APT75GN120J
DYNAMIC CHARACTERISTICS
Symbol
Test Conditions
Characteristic
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
VGEP
Gate-to-Emitter Plateau Voltage
Qg
Total Gate Charge
3
Gate-Emitter Charge
Qgc
Gate-Collector ("Miller ") Charge
td(on)
tr
td(off)
tf
Eon1
Eon2
tr
td(off)
tf
A
ns
8045
µJ
9620
7640
Inductive Switching (125°C)
60
VCC = 800V
41
VGE = 15V
725
RG = 1.0Ω 7
200
8620
I C = 75A
Current Fall Time
44
Turn-on Switching Energy (Diode)
nC
110
TJ = +25°C
Turn-off Delay Time
Turn-on Switching Energy
V
620
6
Eon2
pF
225
RG = 1.0Ω 7
5
UNIT
245
41
4
MAX
30
VCC = 800V
Current Rise Time
Turn-off Switching Energy
425
I C = 75A
Eon1
Eoff
9.0
VGE = 15V
VGE = 15V
Turn-on Switching Energy (Diode)
Turn-on Delay Time
Gate Charge
60
Current Fall Time
td(on)
210
Inductive Switching (25°C)
Turn-off Delay Time
Turn-off Switching Energy
275
f = 1 MHz
15V, L = 100µH,VCE = 1200V
Current Rise Time
Eoff
VGE = 0V, VCE = 25V
TJ = 150°C, R G = 4.3Ω 7, VGE =
Turn-on Delay Time
Turn-on Switching Energy
4800
I C = 75A
Switching Safe Operating Area
TYP
Capacitance
VCE = 600V
Qge
SSOA
MIN
55
TJ = +125°C
ns
µJ
13000
66
11400
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
RθJC
Junction to Case (IGBT)
.33
RθJC
Junction to Case (DIODE)
N/A
WT
VIsolation
Package Weight
29.2
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500
UNIT
°C/W
gm
Volts
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
050-7609
Rev D
10-2005
4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
7 RG is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452)
APT Reserves the right to change, without notice, the specifications and information contained herein.
TYPICAL PERFORMANCE CURVES
TJ = -55°C
120
TJ = 25°C
100
TJ = 125°C
80
60
40
20
0
IC, COLLECTOR CURRENT (A)
120
100
TJ = -55°C
80
TJ = 25°C
TJ = 125°C
60
40
20
0
0
10V
80
60
9V
40
8V
20
7V
FIGURE 2, Output Characteristics (TJ = 125°C)
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
100
0
2
4
6
8
10 12 14 16
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
FIGURE 1, Output Characteristics(TJ = 25°C)
140
11V
120
0
0
0.5 1.0
1.5 2.0
2.5 3.0
3.5
VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
160
I = 75A
C
T = 25°C
J
14
VCE = 240V
12
VCE = 600V
10
VCE = 960V
8
6
4
2
0
2
4
6
8
10
12
14
VGE, GATE-TO-EMITTER VOLTAGE (V)
0
100
TJ = 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
2.5
IC = 75A
2.0
1.5
IC = 37.5A
1.0
0.5
0
8
10
12
14
16
VGE, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
3.0
1.5
IC = 37.5A
1.0
0.5
0.80
0.75
0.70
-50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, Threshold Voltage vs. Junction Temperature
IC, DC COLLECTOR CURRENT(A)
0.85
VGE = 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
0
-50 -25
0
25 50 75 100 125 150
TJ, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
180
0.90
IC = 75A
2.0
1.10
0.95
IC = 150A
2.5
200
1.00
500
3.5
1.15
1.05
200
300
400
GATE CHARGE (nC)
FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC = 150A
3.0
(NORMALIZED)
VGS(TH), THRESHOLD VOLTAGE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
3.5
13 &15V
12V
140
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
= 15V
160
140
120
100
80
60
40
20
0
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
10-2005
GE
Rev D
V
140
APT75GN120J
160
050-7609
160
td (OFF), TURN-OFF DELAY TIME (ns)
td(ON), TURN-ON DELAY TIME (ns)
60
VGE = 15V
50
40
30
20
VCE = 800V
TJ = 25°C, or =125°C
RG = 1.0Ω
L = 100µH
10
0
300
200
V = 800V
100 RCE= 1.0Ω
G
L = 100µH
120
TJ = 25 or 125°C,VGE = 15V
100
80
60
200
TJ = 125°C, VGE = 15V
150
100
TJ = 25°C, VGE = 15V
50
0
160
130
100
70
40
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
160
130
100
70
40
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
50000
25000
EOFF, TURN OFF ENERGY LOSS (µJ)
V
= 800V
CE
V
= +15V
GE
R = 1.0Ω
G
40000
TJ = 125°C
30000
20000
10000
TJ = 25°C
0
= 800V
V
CE
= +15V
V
GE
T = 125°C
80000
60000
Eoff,150A
40000
Eon2,75A
Eon2,37.5A
Eoff,75A
Eoff,37.5A
50
40
30
20
10
RG, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
TJ = 125°C
15000
10000
TJ = 25°C
5000
50000
Eon2,150A
J
20000
G
20000
160
130
100
70
40
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
SWITCHING ENERGY LOSSES (µJ)
100000
= 800V
V
CE
= +15V
V
GE
R = 1.0Ω
0
160
130
100
70
40
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
0
RG = 1.0Ω, L = 100µH, VCE = 800V
250
tf, FALL TIME (ns)
tr, RISE TIME (ns)
VGE =15V,TJ=25°C
400
300
RG = 1.0Ω, L = 100µH, VCE = 800V
0
EON2, TURN ON ENERGY LOSS (µJ)
500
180
20
SWITCHING ENERGY LOSSES (µJ)
VGE =15V,TJ=125°C
160
130
100
70
40
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
40
10-2005
600
0
140
Rev D
700
160
130
100
70
40
10
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
160
050-7609
APT75GN120J
800
70
= 800V
V
CE
= +15V
V
GE
R = 1.0Ω
Eon2,150A
G
40000
30000
20000
Eoff,150A
Eon2,75A
10000
Eoff,75A
Eoff,37.5A
0
Eon2,37.5A
125
100
75
50
25
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
0
TYPICAL PERFORMANCE CURVES
IC, COLLECTOR CURRENT (A)
P
C, CAPACITANCE ( F)
Cies
1,000
500
Coes
200
150
100
50
Cres
100
APT75GN120J
250
6,000
0
0
10
20
30
40
50
VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0
200 400 600 800 1000 1200 1400
VCE, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
D = 0.9
0.30
0.25
0.7
0.20
0.5
Note:
0.15
0.3
0.10
t1
t2
0.05
0
PDM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.35
t
SINGLE PULSE
0.1
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
0.05
10-5
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
Power
(watts)
0.214
0.0335
Case temperature. (°C)
0.00977
0.227
6.33
10
F
= min (fmax, fmax2)
0.05
fmax1 =
td(on) + tr + td(off) + tf
5
1
T = 125°C
J
T = 75°C
C
D = 50 %
V
= 800V
CE
R = 1.0Ω
max
fmax2 =
Pdiss - Pcond
Eon2 + Eoff
Pdiss =
TJ - TC
RθJC
G
10 20 30 40 50 60 70 80 90 100 110 120
IC, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
10-2005
0.0820
Rev D
RC MODEL
050-7609
Junction
temp. (°C)
FMAX, OPERATING FREQUENCY (kHz)
40
APT75GN120J
APT75DQ120
Gate Voltage
10%
TJ = 125°C
td(on)
tr
V CE
IC
V CC
Collector Current
90%
5%
10%
5%
Collector Voltage
A
Switching Energy
D.U.T.
Figure 22, Turn-on Switching Waveforms and Definitions
Figure 21, Inductive Switching Test Circuit
90%
Gate Voltage
TJ = 125°C
td(off)
Collector Voltage
90%
tf
10%
Collector Current
0
Switching Energy
Figure 23, Turn-off Switching Waveforms and Definitions
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
10-2005
Rev D
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
050-7609
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Emitter
30.1 (1.185)
30.3 (1.193)
Collector
* Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Emitter
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.