2SC2715 SOT-23 TRANSISTOR (NPN) FEATURES 1. BASE z z High Power Gain Recommended for FM IF,OSC Stage and AM CONV. IF Stage. 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 50 mA PC Collector Power Dissipation 350 mW Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=10μA, IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=10μA, IC=0 4 V Collector cut-off current ICBO VCB=35V, IE=0 0.1 μA Emitter cut-off current IEBO VEB=4V, IC=0 0.1 μA DC current gain hFE(1) VCE=12V, IC=2mA Collector-emitter saturation voltage VCE(sat) IC=10mA, IB=1mA 0.4 V Base-emitter saturation voltage VBE(sat) IC=10mA, IB=1mA 1 V fT VCE=10V, IC=1mA 100 400 MHz VCE=6V, IC=1mA, f=10.7MHZ 27 33 dB Transition frequency Gpe Power Gain CLASSIFICATION OF Rank 40 240 hFE(1) R O Y Range 40-80 70-140 120-240 Marking RR1 RO1 RY1 １ JinYu semiconductor www.htsemi.com 2SC2715 ２ JinYu semiconductor www.htsemi.com 2SC2715 ３ JinYu semiconductor www.htsemi.com 2SC2715 ４ JinYu semiconductor www.htsemi.com