Product Specification www.jmnic.com 2SD1197 Silicon NPN Power Transistors DESCRIPTION ・With TO-3PN package ・High DC current gain. ・Large current capacity and wide ASO. ・Low saturation voltage. APPLICATIONS ・Motor drivers, printer hammer drivers, relay drivers,voltage regulator control. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 110 V VCEO Collector-emitter voltage Open base 100 V VEBO Emitter-base voltage Open collector 6 V IC Collector current (DC) 10 A ICP Collector current (Pulse) 15 A PC Collector power dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ JMnic Product Specification www.jmnic.com 2SD1197 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. VCEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞ 100 V VCBO Collector-base breakdown voltage IC=5mA ;IE=0 110 V VCEsat Collector-emitter saturation voltage IC=5A; IB=10mA VBEsat Collector-base saturation voltage ICBO UNIT 1.5 V IC=5A; IB=10mA 2.0 V Collector cut-off current VCB=80V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA hFE DC current gain IC=5A ; VCE=3V Transition frequency IC=5A ; VCE=5V fT JMnic 1.0 MAX 1500 4000 20 MHz Product Specification www.jmnic.com 2SD1197 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions JMnic