DISCRETE SEMICONDUCTORS DATA SHEET BLW98 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor BLW98 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers of TV transposers and transmitters in band IV-V, as well as for driver stages in tube systems. • diffused emitter ballasting resistors for an optimum temperature profile; • gold sandwich metallization ensures excellent reliability. The transistor has a 1⁄4" capstan envelope with ceramic cap. All leads are isolated from the stud. QUICK REFERENCE DATA R.F. performance in linear amplifier fvision MHz VCE V IC mA Th °C dim(1) dB class-A 860 25 850 70 −60 > 3,5 > 6,5 class-A 860 25 850 25 −60 typ. 4,4 typ. 7,0 MODE OF OPERATION Po sync (1) W Gp dB Note 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level. PIN CONFIGURATION PINNING - SOT122A. PIN 4 handbook, halfpage 1 3 DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 2 Top view MBK187 Fig.1 Simplified outline. SOT122A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification UHF linear power transistor BLW98 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 VCESM max. open base VCEO max. 27 V VEBO max. 3,5 V d.c. IC max. 2 A (peak value); f > 1 MHz ICM max. 4 A Total power dissipation at Th = 70 °C Ptot max. 21,5 W Storage temperature Tstg Operating junction temperature Tj Emitter-base voltage (open collector) 50 V Collector current MGP717 10 −65 to +150 °C 200 °C max. MGP718 40 handbook, halfpage handbook, halfpage Ptot (W) IC (A) 30 (1) Th = 70 °C 1 Tmb = 25 °C 20 10−1 1 10 VCE (V) 10 102 0 50 Th (°C) 100 (1) Second breakdown limit (independent of temperature). Fig.2 D.C. SOAR. Fig.3 Power derating curve vs. temperature. THERMAL RESISTANCE (dissipation = 21,25 W; Tmb = 82,75 °C, Th = 70 °C) From junction to mounting base Rth j-mb = 5,45 K/W From mounting base to heatsink Rth mb-h = 0,6 K/W August 1986 3 Philips Semiconductors Product specification UHF linear power transistor BLW98 MGP719 6.5 handbook, full pagewidth Rth j-h Th = 120 °C (K/W) 100 °C 80 °C 60 °C 40 °C 20 °C 6 Tj = 200 °C 0 °C 175 °C 5.5 150 °C 125 °C 5 100 °C 4.5 75 °C 4 5 Fig.4 15 25 35 Ptot (W) 45 Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. (Rth mb-h = 0,6 K/W.) Example Nominal class-A operation (without r.f. signal): VCE = 25 V; IC = 850 mA; Th = 70 °C. Fig.4 shows: Rth j-h max. 6,05 K/W Tj max. 200 °C typ. 5,35 K/W typ. 183 °C Typical device: Rth j-h Tj August 1986 4 Philips Semiconductors Product specification UHF linear power transistor BLW98 CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; IC = 10 mA V(BR)CES > 50 V open base, IC = 25 mA V(BR)CEO > 27 V V(BR)EBO > 3,5 V hFE > typ. 15 40 VCEsat typ. 0,25 V fT typ. 2,5 GHz Cc typ. < 24 pF 30 pF IC = 50 mA; VCE = 25 V Cre typ. 15 pF Collector-stud capacitance Ccs typ. 1,2 pF Emitter-base breakdown voltage open collector, IE = 5 mA D.C. current gain(1) IC = 850 mA; VCE = 25 V Collector-emitter saturation voltage(1) IC = 500 mA; IB = 100 mA Transition frequency at f = 500 MHz(2) −IE = 850 mA; VCB = 25 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 25 V Feedback capacitance at f = 1 MHz Notes 1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02. 2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01. MGP720 10 handbook, halfpage IC (A) Th = 70 °C 25 °C 1 10−1 10−2 0.5 1 1.5 VBE (V) 2 Fig.5 Typical values; VCE = 25 V. August 1986 5 Philips Semiconductors Product specification UHF linear power transistor BLW98 MGP721 60 MGP722 100 handbook, halfpage handbook, halfpage Cc (pF) hFE 75 VCE = 25 V 40 5V 50 20 typ 25 0 0 0 1 0 2 IC (A) 10 20 VCB (V) 30 Fig.7 IE = Ie = 0; f = 1 MHz; Tj = 25 °C. Fig.6 Typical values; Tj = 25 °C. MGP723 4 handbook, full pagewidth fT (GHz) 3 typ 2 1 0 0 1 2 Fig.8 VCB = 25 V; f = 500 MHz; Tj = 25 °C. August 1986 6 −IE (A) 3 Philips Semiconductors Product specification UHF linear power transistor BLW98 APPLICATION INFORMATION R.F. performance in u.h.f. class-A operation (linear power amplifier) fvision (MHz) VCE (V) IC (mA) dim(dB)(1) Th (°C) Po sync (W)(1) GP (dB) 860 25 850 70 −60 > 3,5 > 6,5 860 25 850 70 −60 typ. 3,8 typ. 7,0 860 25 850 25 −60 typ. 4,4 typ. 7,0 Note 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level. handbook, full pagewidth VSWR input < 1.1 C1 T.U.T. L1 50 Ω C12 C2 L4 L2 VSWR output < 50 Ω L3 C5 C3 C8 C9 C6 R3 C10 C11 R4 R2 BD136 C4 C7 BY206 R1 R5 R6 R7 +VS MGP724 Fig.9 Class-A test circuit at fvision = 860 MHz. August 1986 7 Philips Semiconductors Product specification UHF linear power transistor BLW98 List of components: C1 = C2 = 1,4 to 5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C3 = C4 = 100 nF polyester capacitor C5 = C6 = 1 nF feed-through capacitor C7 = 5,6 pF ceramic capacitor C8 = 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 09003) C9 = 2 to 9 pF film dielectric trimmer (cat. no. 2222 809 09002) C10 = 10 µF/40 V solid aluminium electrolytic capacitor C11 = 470 nF polyester capacitor C12 = 2 × 3,3 pF chip capacitors (in parallel) R1 = 150 Ω carbon resistor (0,25 W) R5 = 4 × 12 Ω carbon resistors in parallel (1 W each) R2 = 1,8 kΩ carbon resistor (0,5 W) R6 = 1 kΩ carbon resistor (0,25 W) R3 = 33 Ω carbon resistor (0,5 W) R7 = 220 Ω carbon potentiometer (0,25 W) R4 = 220 Ω carbon resistor (1 W) L1 = stripline (13,6 mm × 6,9 mm) L2 = microchoke 0,47 µH (cat. no. 4322 057 04770) L3 = 1 turn Cu wire (1 mm); internal diameter 5,5 mm; leads 2 × 5 mm L4 = stripline (40,8 mm × 6,9 mm) L1 and L4 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 2,74); thickness 1,5 mm. August 1986 8 Philips Semiconductors Product specification UHF linear power transistor BLW98 96 mm handbook, full pagewidth rivet 47 mm C5 +VCC VBB C11 C6 C3 L3 L2 C8 L4 L1 C1 C12 C9 C2 band V MGP725 Note Hole in printed-circuit board: Ø 9,7 mm. Fig.10 Component layout and printed circuit board for 860 MHz class-A test circuit. The circuit and the components are on one side of the PTFE fibre-glass board, the other side is unetched copper to serve as a ground-plane. Earth connections are made by hollow rivets. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane. August 1986 9 Philips Semiconductors Product specification UHF linear power transistor BLW98 MGP726 −50 handbook, full pagewidth dim (dB) 15 dcm (%) −55 10 dim dcm −60 −65 5 0 2 4 6 8 Po sync (W) 0 10 Fig.11 Intermodulation distortion (dim)(1.) and cross-modulation distortion (dcm)(2.) as a function of Po sync. Typical values; VCE = 25 V; IC = 850 mA;− − −Th = 25 °C;Th = 70 °C; fvision = 860 MHz. 1. Three-tone test method (vision carrier −8 dB, sound carrier −7 dB, sideband signal −16 dB), zero dB corresponds to peak sync level. Intermodulation distortion of input signal ≤ −75 dB. 2. Two-tone test method (vision carrier 0 dB, sound carrier −7 dB), zero dB corresponds to peak sync level. Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from 0 dB to −20 dB. August 1986 10 Philips Semiconductors Product specification UHF linear power transistor BLW98 MGP727 5 ri, xi MGP728 10 handbook, halfpage handbook, halfpage RL, XL (Ω) 4 (Ω) xi 8 RL 3 XL 2 6 ri 1 0 400 650 f (MHz) 4 400 900 Typical values; VCE = 25 V; IC = 850 mA; class-A operation; Th = 70 °C. MGP729 12 Gp (dB) 8 4 f (MHz) 900 Typical values; VCE = 25 V; IC = 850 mA; class-A operation; Th = 70 °C. Fig.14 August 1986 900 Fig.13 Load impedance (series components). handbook, halfpage 650 f (MHz) Typical values; VCE = 25 V; IC = 850 mA; class-A operation; Th = 70 °C. Fig.12 Input impedance (series components). 0 400 650 11 Philips Semiconductors Product specification UHF linear power transistor BLW98 PACKAGE OUTLINE Studded ceramic package; 4 leads SOT122A D A ceramic BeO metal Q c N1 A D1 w1 M A D2 N M W N3 M1 X detail X H b α 4 L 3 H 1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 H L M1 M N N1 max. N3 Q W w1 α mm 5.97 4.74 5.85 5.58 0.18 0.14 7.50 7.23 6.48 6.22 7.24 6.93 27.56 25.78 9.91 9.14 3.18 2.66 1.66 1.39 11.82 11.04 1.02 3.86 2.92 3.38 2.74 8-32 UNC 0.381 90° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-04-18 SOT122A August 1986 EUROPEAN PROJECTION 12 Philips Semiconductors Product specification UHF linear power transistor BLW98 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 13