PHILIPS BLW50F

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW50F
HF/VHF power transistor
Product specification
August 1986
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
class-A, AB and B operated, industrial
and military transmitters in the h.f.
and v.h.f. band. Resistance
stabilization provides protection
against device damage at severe load
mismatch conditions. Matched
hFE groups are available on request.
BLW50F
It has a 3/8" flange envelope with a
ceramic cap. All leads are isolated
from the flange.
QUICK REFERENCE DATA
R.F. performance
MODE OF OPERATION
VCE
V
f
MHz
s.s.b. (class-A)
45
1,6 - 28
s.s.b. (class-AB)
50
1,6 - 28
PL
W
Gp
dB
0 - 16 (P.E.P.) >
ηdt
%
−
19,5
10 - 65 (P.E.P.) typ. 18
IC
A
typ.
IC(ZS)
mA
−
1,2
45(1)
1,45
50
d3
dB
<
Th
°C
−40
70
typ. −30
25
Note
1. At 65W P.E.P.
PIN CONFIGURATION
PINNING - SOT123
PIN
halfpage
1
4
c
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
handbook, halfpage
b
e
MBB012
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
VCESM
max.
110 V
Collector-emitter voltage (open base)
VCEO
max.
55 V
Emitter-base voltage (open collector)
VEBO
max.
4 V
Collector current (average)
IC(AV)
max.
2,5 A
Collector current (peak value); f > 1 MHz
ICM
max.
7,5 A
D.C. and r.f. (f > 1 MHz) power dissipation; Tmb = 25 °C
Ptot; Prf
max.
94 W
Storage temperature
Tstg
Operating junction temperature
Tj
MGP466
−65 to + 150 °C
max.
200 °C
MGP467
150
10
handbook, halfpage
handbook, halfpage
Prf
(W)
IC
(A)
Tmb = 25 °C
100
ΙΙ
Th = 70 °C
1
50
Ι
10−1
0
1
10
VCE (V)
0
102
50
Th (°C)
100
I Continuous d.c. and r.f. operation
II Short-time operation during mismatch
Fig.2 D.C. SOAR.
Fig.3 Power derating curves vs. temperature.
THERMAL RESISTANCE
(dissipation = 54 W; Tmb = 86 °C, i.e. Th = 70 °C)
From junction to mounting base
(d.c. and r.f. dissipation)
From mounting base to heatsink
August 1986
3
Rth j-mb
=
2,1 K/W
Rth mb-h
=
0,3 K/W
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
CHARACTERISTICS
Tj = 25 °C
Collector-emitter breakdown voltage
V(BR) CES
>
110 V
V(BR) CEO
>
55 V
V(BR)EBO
>
4 V
ICES
<
10 mA
open base
ESBO
>
8 mJ
RBE = 10 Ω
ESBR
>
8 mJ
VBE = 0; IC = 25 mA
Collector-emitter breakdown voltage
open base; IC = 100 mA
Emitter-base breakdown voltage
open collector; IE = 10 mA
Collector cut-off current
VBE = 0; VCE = 55 V
Second breakdown energy; L = 25 mH; f = 50 Hz
D.C. current
gain(1)
IC = 1,2 A; VCE = 5 V
hFE
D.C. current gain ratio of matched
typ. 25
15 to 100
devices(1)
hFE1/hFE2
<
1,2
VCEsat
typ.
1,2 V
−IE = 1,2 A; VCB = 45 V
fT
typ.
490 MHz
−IE = 4,0 A; VCB = 45 V
fT
typ.
540 MHz
Cc
typ.
53 pF
IC = 50 mA; VCE = 45 V
Cre
typ.
35 pF
Collector-flange capacitance
Ccf
typ.
2 pF
IC = 1,2 A; VCE = 5 V
Collector-emitter saturation voltage(1)
IC = 3,0 A; IB = 0,6 A
Transition frequency at f = 100
MHz(1)
Collector capacitance at f = 1 MHz
IE = Ie = 0; VCB = 45 V
Feedback capacitance at f = 1 MHz
Note
1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02.
August 1986
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
MGP468
10
MGP469
40
handbook, halfpage
handbook, halfpage
IC
(A)
hFE
VCE = 45 V
30
typ
1
5V
20
10−1
10
10−2
0
0.5
1
VBE (V)
0
1.5
0
Fig.4 VCE = 40 V; Tmb = 25 °C.
3
MGP471
300
Cc
(pF)
10 V
(MHz)
IC (A)
handbook, halfpage
VCB = 45 V
fT
2
Fig.5 Typical values; Tj = 25 °C.
MGP470
600
handbook, halfpage
1
400
200
200
100
typ
0
0
0
5
−IE (A)
10
0
Fig.6 Typical values; f = 100 MHz; Tj = 25 °C.
August 1986
25
VCB (V)
50
Fig.7 IE = Ie = 0; f = 1 MHz; Tj = 25 °C.
5
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
APPLICATION INFORMATION
R.F. performance in s.s.b. class-A operation (linear power amplifier)
VCE = 45 V; f1 = 28,000 MHz; f2 = 28,001 MHz
OUTPUT POWER
W
>
16 (P.E.P.)
typ. 17 (P.E.P.)
Gp
dB
IC
A
d3(1)
dB
d5(1)
dB
Th
°C
>
19,5
1,2
−40
< −40
70
typ.
20,5
1,2
−40
< −40
70
C9
L4
handbook, full pagewidth
C1
L1
50 Ω
50 Ω
T.U.T.
R1
C8
L3
C2
R2
L2
C6
+VBB
C5
C3
C7
C4
R3
+VCC
MGP472
Fig.8 Test circuit; s.s.b. class-A.
List of components in Fig.8:
C1
=
C2 = 10 to 780 pF film dielectric trimmer
C3
=
22 nF ceramic capacitor (63 V)
C4
=
4,7 µF/16 V electrolytic capacitor
C5
=
1 µF/75 V solid tantalum capacitor
C6
=
C7 = 47 nF polyester capacitor (100 V)
C8
=
68 pF ceramic capacitor (500 V)
C9
=
3,9 nF ceramic capacitor
L1
=
3 turns closely wound enamelled Cu wire (1,0 mm); int. dia 9,0 mm; leads 2 × 5 mm
L2
=
Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L3
=
1,05 µH; 15 turns enamelled Cu wire (1,0 mm); int. dia. 10 mm; length 17,4 mm; leads 2 × 5 mm
L4
=
162 nH; 6 turns enamelled Cu wire (1,0 mm); int. dia. 7,0 mm; length 11,6 mm; leads 2 × 5 mm
R1
=
1,6 Ω; parallel connection of 3 × 4,7 Ω carbon resistors (± 5%; 0,125 W)
R2
=
47 Ω carbon resistor (± 5%; 0,25 W)
R3
=
4,7 Ω carbon resistor (± 5%; 0,25 W)
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
August 1986
6
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
MGP473
−20
handbook, full pagewidth
d3
(dB)
−30
IC = 0.8 A
1.0 A
1.2 A
−40
−50
−60
Fig.9
0
10
20
P.E.P. (W)
30
Intermodulation distortion (see note on previous page) as a function of output power. Typical values;
VCE = 45 V; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 70 °C.
August 1986
7
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
R.F. performance in s.s.b. class-AB operation (linear power amplifier)
VCE = 50 V; f1 = 28,000 MHz; f2 = 28,001 MHz
ηdt(%)
OUTPUT POWER
Gp
W
dB
10 to 65 (P.E.P.)
typ. 18
IC (A)
AT 65 W P.E.P.
typ. 45
typ. 1,45
d3(1)
d5(1)
IC(ZS)
Th
dB
dB
mA
°C
typ. −30
< −30
50
25
C9
L4
handbook, full pagewidth
C1
L1
50 Ω
50 Ω
T.U.T.
R1
L3
C2
R2
C4
C7
L2
+VCC
temperature
compensated bias
(Ri < 0.1 Ω)
C5
C3
C6
C8
MGP474
Fig.10 Test circuit; s.s.b. class-AB.
List of components:
C1
= C2 = 10 to 780 pF film dielectric trimmer
C3
= C5 = C6 = 220 nF polyester capacitor
C4
= 120 pF ceramic capacitor (500 V)
C7
= 150 pF ceramic capacitor (500 V)
C8
= 47µF/63 V electrolytic capacitor
C9
= 3,9 nF ceramic capacitor
L1
= 4 turns closely wound enamelled Cu wire (1,6 mm); int. dia 7,0 mm; leads 2 × 5 mm
L2
= Ferroxcube wide-band h.f. choke, grade 3B (cat.no. 4312 020 36640)
L3
= 9 turns enamelled Cu wire (1,0 mm); int. dia. 10 mm; length 14,5 mm; leads 2 × 5 mm
L4
= 6 turns enamelled Cu wire (1,0 mm); int. dia. 6,5 mm; length 11,0 mm; leads 2 × 5 mm
R1
= 2,4 Ω; parallel connection of 2 × 4,7 Ω carbon resistors
R2
= 39 Ω carbon resistor
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
August 1986
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
MGP475
−20
MGP476
50
handbook, halfpage
handbook, halfpage
Gp
ηdt
(%)
d3, d5
(dB)
20
Gp
(dB)
ηdt
−30
10
25
d3
d5
−40
0
0
25
50
P.E.P. (W)
75
0
25
50
P.E.P. (W)
0
75
VCE = 50 V; IC(ZS) = 50 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C; typical values.
VCE = 50 V; IC(ZS) = 50 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C; typical values.
Fig.11 Intermodulation distortion as a function of
output power(1).
Fig.12 Double-tone efficiency and power gain as a
function of output power.
Ruggedness in s.s.b. operation
The BLW50F is capable of withstanding full load mismatch
(VSWR = 50 through all phases) up to 45 W (P.E.P.) under
the following conditions:
VCE = 50 V; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 70 °C;
Rth mb-h = 0,3 K/W.
August 1986
9
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
MGP477
30
MGP478
20
handbook, halfpage
handbook, halfpage
Gp
ri, xi
(dB)
(Ω)
20
10
ri
10
0
xi
0
1
10
f (MHz)
−10
102
VCE = 50 V; IC(ZS) = 50 mA; PL = 60 W;
Th = 25 °C; ZL = 16 Ω.
10
f (MHz)
102
VCE = 50 V; IC(ZS) = 50 mA; PL = 60 W;
Th = 25 °C; ZL = 16 Ω.
Fig.13 Power gain as a function of frequency.
Fig.14 Input impedance (series components) as
a function of frequency.
Figs 13 and 14 are typical curves and hold for an
unneutralized amplifier in s.s.b. class-AB operation.
August 1986
1
10
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
PACKAGE OUTLINE
Flanged ceramic package; 2 mounting holes; 4 leads
SOT123A
D
A
F
q
C
B
U1
w2 M C
c
H
b
L
4
3
α
A
p
U3
U2
w1 M A B
1
2
H
Q
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
F
H
L
p
Q
q
U1
U2
U3
w1
w2
mm
7.47
6.37
5.82
5.56
0.18
0.10
9.73
9.47
9.63
9.42
2.72
2.31
20.71
19.93
5.61
5.16
3.33
3.04
4.63
4.11
18.42
25.15
24.38
6.61
6.09
9.78
9.39
0.51
1.02
inches
0.294
0.251
0.229 0.007
0.219 0.004
0.182
0.725
0.162
0.99
0.96
0.26
0.24
0.385
0.370
0.02
0.04
OUTLINE
VERSION
0.383 0.397 0.107 0.815
0.373 0.371 0.091 0.785
0.221 0.131
0.203 0.120
REFERENCES
IEC
JEDEC
EIAJ
SOT123A
August 1986
α
45°
EUROPEAN
PROJECTION
ISSUE DATE
97-06-28
11
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW50F
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
August 1986
12