DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band. • multi-base structure and diffused emitter-ballasting resistors for an optimum temperature profile; • gold metallization ensures excellent reliability. The BLU99 has a 4-lead stud envelope with a ceramic cap (SOT122A). All leads are isolated from the stud. The BLU99/SL is a studless version (SOT122D). QUICK REFERENCE DATA R.F. performance at Th = 25 °C in a common-emitter class-B circuit. MODE OF OPERATION narrow band; c.w. VCE V f MHz PL W 12,5 470 5 > 12,5 900 4 typ. PIN CONFIGURATION 10,5 > PIN 4 4 1 7,0 typ. 60 60 PINNING - SOT122A; SOT122D fpage age ηC % Gp dB 3 1 3 DESCRIPTION 1 collector 2 emitter 3 base 4 emitter 2 Top view MBK187 2 MSB055 Fig.1 Simplified outline. SOT122A (BLU99). Fig.2 Simplified outline. SOT122D (BLU99/SL). PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. March 1993 2 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-base voltage (open emitter) VCBO max. 36 V Collector-emitter voltage (open base) VCEO max. 16 V Emitter-base voltage (open collector) VEBO max. 3 V IC;IC(AV) max. 0,8 A Collector current d.c. or average peak value; f > 1 MHz D.C. power dissipation up to Tmb = 50 °C ICM max. 2,5 A Ptot (d.c.) max. 12,5 W 19 W R.F. power dissipation f > 1 MHz; Tmb = 25 °C Ptot (r.f.) max. Storage temperature Tstg −65 to + 150 °C Operating junction temperature Tj max. MDA372 1 MDA373 28 handbook, halfpage Tmb = 50 °C handbook, halfpage 200 °C Ptot Th = 70 °C IC (W) III (A) 20 II 12 10−1 I 4 10 1 VCE (V) 0 102 20 40 60 80 100 Th (°C) I Continuous d.c. operation II Continuous r.f. operation (f > 1 MHz). III Short-time r.f. operation during mismatch (f > 1 MHz). Rth mb-h = 0,6 K/W. Fig.3 D.C. SOAR. Fig.4 Power/temperature derating curves. THERMAL RESISTANCE (dissipation = 9 W; Tmb = 25 °C) From junction to mounting base (d.c. dissipation) Rth j-mb(dc) = 10 K/W Rth j-mb(rf) = 7,5 K/W Rth mb-h = 0,6 K/W From junction to mounting base (r.f. dissipation) From mounting base to heatsink March 1993 3 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor CHARACTERISTICS Tj = 25 °C unless otherwise specified Collector-base breakdown voltage open emitter; IC = 10 mA V(BR)CBO > 36 V V(BR)CEO > 16 V V(BR)EBO > 3 V ICES < 5 mA ESBR > 1 mJ hFE > typ. 25 100 fT typ. 4,0 GHz Cc typ. 7,5 pF Cre typ. 5 pF Ccs typ. 1,2 pF Collector-emitter breakdown voltage open base; IC = 20 mA Emitter-base breakdown voltage open collector; IE = 1 mA Collector cut-off current VBE = 0; VCE = 16 V Second breakdown energy; L = 25 mH; f = 50 Hz RBE = 10 Ω D.C. current gain(2) IC = 0,6 A; VCE = 10 V Transition frequency at f = 500 MHz(1) IC = 0,6 A; VCE = 12,5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 12,5 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 12,5 V Collector-stud capacitance Notes 1. Measured under pulse conditions: tp = 50 µs; δ < 0,01. 2. Measured under pulse conditions: tp = 300 µs; δ < 0,01. March 1993 4 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor MDA374 120 MDA375 5 handbook, halfpage handbook, halfpage fT (GHz) 4 hFE 80 3 2 40 1 0 0 0 1.6 0.8 IC (A) 0 2.4 Fig.6 MDA376 16 Cc handbook, halfpage (pF) 14 12 10 8 6 0 4 8 12 16 20 VCB (V) Fig.7 IE = ie = 0; f = 1 MHz; typ. values. March 1993 0.8 1.2 1.6 2 IE (A) VCE = 10 V; Tj = 25 °C; typ. values. Fig.5 0.4 5 VCB = 12,5 V; f = 500 MHz; Tj = 25 °C; typ. values. Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor APPLICATION INFORMATION (part I) R.F. performance in c.w. operation (common-emitter class-B circuit) at f = 470 MHz; Th = 25 °C. MODE OF OPERATION VCE V PL W narrow band; c.w. 12,5 5 C1 handbook, full pagewidth ,, ,, C2 C4 C3 L3 Gp dB ηC % IC A < 0,45 > 10,5 < 0,665 > 60 typ. 0,32 typ. 12 0,60 66 ,, L6 T.U.T. L1 50 Ω PS W typ. typ. C8 L7 50 Ω C7 L5 L2 C5 C6 R2 R1 L4 +VCC MDA365 Fig.8 Class-B test circuit at f = 470 MHz. List of components: C1 = 2,7 pF multilayer ceramic chip capacitor(1) C2 = C7 = C8 = 1,4-5,5 pF film dielectric trimmer (cat.no. 2222 809 09001) C3 = 7,5 pF multilayer ceramic chip capacitor(1) C4 = 2-9 pF film dielectric trimmer (cat.no. 2222 809 09002) C5 = 100 pF multilayer ceramic chip capacitor (cat. no. 2222 852 13101) C6 = 100 nF metallized film capacitor (cat. no. 2222 352 45104) L1 = stripline, 22,5 mm × 6,0 mm L2 = 1 turn Cu-wire (1,0 mm), int. dia. 5,5 mm, leads 2 × 5 mm L3 = L4 = Ferroxcube wideband h.f. choke, grade 3B (cat. no. 4312 020 36642) L5 = 4 turns enamelled Cu-wire (1,0 mm), int. dia. 6 mm, length 7,5 mm, leads 2 × 5 mm L6 = stripline, 10,0 mm × 6,0 mm L7 = 1 turn Cu-wire (1,0 mm), int. dia. 5 mm, leads 2 × 5 mm R1 = R2 = 10 Ω metal film resistor, 0,25 W L1 and L6 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (εr = 2,74) and a thickness of 1⁄16 inch. Note 1. American Technical Ceramics capacitor type 100 A or capacitor of same quality. March 1993 6 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor 100 mm handbook, full pagewidth 58 mm rivets L3 R1 L2 C1 C3 L7 L1 C2 L6 C8 L5 L4 C4 C6 C5 C7 +VCC R2 MDA366 The circuits and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper to serve as ground plane. Earth connections are made by hollow rivets. Fig.9 Printed circuit board and component layout for 470 MHz. March 1993 7 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor MDA377 8 MDA378 20 Gp 100 ηC handbook, halfpage handbook, halfpage VCE = 12.5 V PL (W) (%) (dB) 16 80 6 12 4 60 ηC ηC 7.5 V 8 40 Gp Gp 2 20 4 0 0 0 0.4 0.8 PS (W) f = 470 MHz; class-B operation; Th = 25 °C; typ. values. 2 4 6 PL (W) f = 470 MHz; class-B operation; Th = 25 °C; typ. values. : VCE = 12,5 V; − − − − : VCE = 7,5 V. Fig.10 Output power. Fig.11 Power gain and efficiency; RUGGEDNESS: The device is capable of withstanding a load mismatch with VSWR = 50 (all phases) up to a supply voltage of 15,5 V at rated load power. March 1993 0 0 1.2 8 8 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor MDA379 4 MDA380 10 ZL handbook, halfpage handbook, halfpage ri Zi RL (Ω) (Ω) 8 2 6 xi 4 0 2 −2 400 440 480 520 f (MHz) 0 400 560 VCE = 12,5 V; PL = 5 W; Th = 25 °C; f = 400-520 MHz; typical values. MDA381 15 Gp (dB) 14 13 12 11 480 520 f (MHz) 560 VCE = 12,5 V; PL = 5 W; Th = 25 °C; f = 400-520 MHz; typical values. Fig.14 Power gain. March 1993 480 520 f (MHz) 560 Fig.13 Load impedance (series components). handbook, halfpage 440 440 VCE = 12,5 V; PL = 5 W; Th = 25 °C; f = 400-520 MHz; typical values. Fig.12 Input impedance (series components). 10 400 XL 9 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor APPLICATION INFORMATION (part II) R.F. performance in c.w. operation (common-emitter class-B circuit) at f = 900 MHz; Th = 25 °C MODE OF OPERATION VCE V PL W PS W GP dB IC A ηC % narrow band; c.w. 12,5 4 typ. 0,8 typ. 7,0 typ. 0,54 typ. 60 handbook, full pagewidth ,, ,,, ,, ,,,,,,, ,,,,,,, C4 C6 L6 C10 L7 L10 BLU99 C1 50 Ω L1 L2 L8 C2 C12 50 Ω L5 C3 C11 C13 C5 C7 L3 R2 R1 L9 L4 C9 C8 +VCC = 12.5 V Fig.15 Class-B test circuit at f = 900 MHz. March 1993 10 MDA382 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor List of components: C1 = C12 = 33 pF multilayer ceramic chip capacitor(1) C2 = C13 = 1,4-5,5 pF film dielectric trimmer (cat. no. 2222 809 09001) C3 = C11 = 1,2-3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) C4 = C5 = C10 = 6,2 pF multilayer ceramic chip capacitor(1) C6 = 1 pF multilayer ceramic chip capacitor(1) C7 = 10 pF ceramic feed-through capacitor C8 = 330 pF ceramic feed-through capacitor C9 = 2,2 µF tantalum electrolytic capacitor L1 = stripline, 21,0 mm × 1,85 mm L2 = stripline, 5,0 mm × 1,85 mm L3 = 60 nH, 4 turns enamelled Cu-wire (0,4 mm), close wound, int. dia. 3 mm L4 = L9 = Ferroxcube wideband h.f. choke, grade 3B (cat. no 4312 020 36642) L5 = stripline, 11,3 mm × 6,0 mm L6 = stripline, 10,0 mm × 6,0 mm L7 = stripline, 15,9 mm × 1,85 mm L8 = 280 nH, 15 turns enamelled Cu-wire (0,4 mm), close wound, int. dia. 3 mm L10 = stripline, 28,0 mm × 1,85 mm R1 = R2 = 10 Ω metal film resistor, 0,25 W L1, L2, L5, L6, L7 and L10 are striplines on a double Cu-clad printed circuit board with P.T.F.E. fibre-glass dielectric (εr = 2,74) and thickness of 1⁄32 inch. Note 1. American Technical Ceramics capacitor type 100 A or capacitor of same quality. March 1993 11 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor 128.5 mm handbook, full pagewidth soldered copperstraps E B C 80 mm E rivets L9 C7 L4 C8 VCC R1 R2 L8 L3 E C4 B C1 C5 C2 C9 C10 C C12 C6 E C11 C3 C13 MDA383 The circuit and the components are on one side of the P.T.F.E. fibre-glass board; the other side is unetched copper to serve as a ground plane. Earth connections are made by hollow rivets and also by fixing screws and copper straps around the board and under the emitters to provide a direct contact between the copper on the component side and the ground plane. Fig.16 Printed circuit board and component layout for a 900 MHz test circuit. RUGGEDNESS The device is capable of withstanding a load mismatch with VSWR = 50 (all phases) up to a supply voltage of 15,5 V at rated load power. March 1993 12 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor MDA384 5 MDA385 10 Gp handbook, halfpage handbook, halfpage PL 4 (dB) 8 3 6 2 4 1 2 (W) 100 ηC (%) 80 Gp 60 ηC 40 20 0 0 0 0 0.4 0.8 1.2 PS (W) 0 1.6 2 3 4 5 PL (W) f = 900 MHz; VCE = 12,5 V; class-B operation; Th = 25 °C; typ. values. f = 900 MHz; VCE = 12,5 V; class-B operation; Th = 25 °C; typ. values. Fig.17 Output power. March 1993 1 Fig.18 Power gain and efficiency. 13 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor MDA386 6 MDA387 14 handbook, halfpage handbook, halfpage xi Zi (Ω) ZL (Ω) RL 10 4 ri 6 2 XL 0 800 880 840 920 2 800 960 1000 f (MHz) 840 880 920 960 1000 f (MHz) f = 800-960 MHz; VCE = 12,5 V; PL = 4 W; Th = 25 °C; typ. values. f = 800-960 MHz; VCE = 12,5 V; PL = 4 W; Th = 25 °C; typ. values. Fig.19 Input impedance (series components). Fig.20 Load impedance (series components). MDA388 10 Gp handbook, halfpage (dB) 9 8 7 6 5 800 850 900 950 1000 f (MHz) Fig.21 Power gain. March 1993 14 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor PACKAGE OUTLINES Studded ceramic package; 4 leads SOT122A D A ceramic BeO metal Q c N1 A D1 w1 M A D2 N M W N3 M1 X detail X H b α 4 L 3 H 1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 D2 H L M1 M N N1 max. N3 Q W w1 α mm 5.97 4.74 5.85 5.58 0.18 0.14 7.50 7.23 6.48 6.22 7.24 6.93 27.56 25.78 9.91 9.14 3.18 2.66 1.66 1.39 11.82 11.04 1.02 3.86 2.92 3.38 2.74 8-32 UNC 0.381 90° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-04-18 SOT122A March 1993 EUROPEAN PROJECTION 15 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor Studless ceramic package; 4 leads SOT122D D A Q c D2 H b α 4 L 3 H 1 2 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D2 H L Q α mm 4.17 3.27 5.85 5.58 0.18 0.14 7.50 7.23 7.24 6.98 27.56 25.78 9.91 9.14 1.58 1.27 90° OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-04-18 SOT122D March 1993 EUROPEAN PROJECTION 16 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1993 17