DISCRETE SEMICONDUCTORS DATA SHEET BLV25 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV25 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters. • internally matched input for wideband operation and high power gain; • multi-base structure and diffused emitter ballasting resistors for an optimum temperature profile; • gold-metallization ensures excellent reliability. The transistor has a 1⁄2in 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit. MODE OPERATION narrow band; c.w. VCE V f MHz PL W PS W Gp dB η % 28 108 175 < 17,5 > 10,0 > 65 PIN CONFIGURATION PINNING PIN handbook, halfpage 1 3 5 2 4 DESCRIPTION 1 emitter 2 emitter 3 base 4 collector 5 emitter 6 emitter 6 MSB006 Fig.1 Simplified outline, SOT119A. PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged. August 1986 2 Philips Semiconductors Product specification VHF power transistor BLV25 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 VCESM max. 65 V open base VCEO max. 33 V VEBO max. 4 V d.c. or average IC; IC(AV) max. 17, 5 A (peak value); f > 1 MHz ICM max. 35 A Ptot (d.c.) max. 220 W R.F. power dissipation (f > 1 MHz); Tmb = 25 °C Ptot (r.f.) max. 270 W R.F. power dissipation (f > 1 MHz); Th = 70 °C Ptot (r.f.) max. 146 W Storage temperature Tstg Operating junction temperature Tj Emitter-base voltage (open collector) Collector current Total power dissipation at Tmb = 25 °C MGP294 102 handbook, halfpage −65 +150 °C to 200 °C max. MGP295 300 handbook, halfpage Ptot (W) IC (A) ΙΙΙ Tmb = 25 °C 200 ΙΙ (1) 10 Th = 70 °C 1 1 10 100 VCE (V) Ι 0 102 0 50 100 Th (°C) I Continuous d.c. operation II Continuous r.f. operation (f > 1 MHz) III Short-time operation during mismatch; (f > 1 MHz). (1) Second breakdown limit. Fig.2 D.C. SOAR. Fig.3 Power derating curves vs. temperature. THERMAL RESISTANCE (dissipation = 150 W; Tmb = 72 °C, i.e. Th = 42 °C) From junction to mounting base (d.c. dissipation) Rth j-mb(dc) max 0,85 K/W From junction to mounting base (r.f. dissipation) Rth j-mb(rf) max 0,60 K/W From mounting base to heatsink Rth mb-h max 0,2 K/W August 1986 3 Philips Semiconductors Product specification VHF power transistor BLV25 CHARACTERISTICS Tj = 25 °C Collector-emitter breakdown voltage VBE = 0; IC = 50 mA V(BR)CES > 65 V open base; IC = 200 mA V(BR)CEO > 33 V V(BR)EBO > 4 V ICES < 25 mA open base ESBO > 20 mJ RBE = 10 Ω ESBR > 20 mJ typ. 50 Emitter-base breakdown voltage open collector; IE = 20 mA Collector cut-off current VBE = 0; VCE = 33 V Second breakdown energy; L = 25 mH; f = 50 Hz D.C. current gain(1) IC = 8,5 A; VCE = 25 V hFE 15 to 100 Collector-emitter saturation voltage(1) IC = 20 A; IB = 4,0 A VCEsat typ. 1,6 V −IE = 8,5 A; VCB = 25 V fT typ. 600 MHz −IE = 20 A; VCB = 25 V fT typ. 600 MHz Cc typ. 275 pF IC = 100 mA; VCE = 25 V Cre typ. 155 pF Collector-flange capacitance Ccf typ. 3 pF Transition frequency at f = 100 MHz(2) Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 25 V Feedback capacitance at f = 1 MHz Notes 1. Measured under pulse conditions: tp ≤ 300 µs; δ ≤ 0,02. 2. Measured under pulse conditions: tp ≤ 50 µs; δ ≤ 0,01. August 1986 4 Philips Semiconductors Product specification VHF power transistor BLV25 MGP296 80 MGP297 800 handbook, halfpage handbook, halfpage fT (MHz) hFE typ typ 40 400 0 0 10 0 20 IC (A) 0 Fig.4 VCE = 25 V; Tj = 25 °C. MGP298 600 Cc (pF) typ 300 0 10 20 VCB (V) 30 Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 °C. August 1986 20 −IE (A) 30 Fig.5 VCB = 25 V; f = 100 MHz; Tj = 25 °C. handbook, halfpage 0 10 5 Philips Semiconductors Product specification VHF power transistor BLV25 APPLICATION INFORMATION R.F. performance in narrow band c.w. operation (common-emitter class-B circuit) Th = 25 °C f MHz VCE V PL W 108 28 175 PS W Gp dB < 17,5 > 10,0 < 9,6 > 65 typ. 13,9 typ. 11,0 typ. 8,9 typ. 70 C12 handbook, full pagewidth C4 C5 L2 L1 50 Ω L7 L6 50 Ω T.U.T. C9 L5 C1 C2 η % IC A C13 C16 C15 C3 L3 C6 C7 L8 +VCC R1 L4 C8 C10 C11 C14 L9 MGP299 Fig.7 Class-B test circuit at f = 108 MHz. List of components C1 = C3 = 7 to 100 pF film dielectric trimmer (cat. no. 2222 809 07015) C2 = C4 = C5 = C6 = C7 = 100 pF (500 V) multilayer ceramic chip capacitor (ATC(1)); except for C2 these capacitors are placed 7 mm from transistor edge C8 = C10 = 470 pF multilayer ceramic chip capacitor (cat. no. 2222 856 13471) C9 = C15 = 40 pF, parallel connection of 4 x 10 pF lead feed-through capacitors (cat. no. 2222 702 05109) C11 = 100 nF multilayer ceramic chip capacitor (cat. no. 2222 852 59104) C12 = C16 = 7 to 47 pF precision tuning capacitor (cat. no. 2222 805 00174) C13 = 19 pF, parallel connection of 4 x 4,7 pF lead feed-through capacitors (cat. no. 2222 702 04478) C14 = 6,8 µF/63 V electrolytic capacitor L1 = Cu strip (10 mm × 4 mm × 0,5 mm) L2 = strip on printed-circuit board L3 = 7 turns closely wound enamelled Cu wire (0,3 mm); int. dia. 3,0 mm; leads 2 × 6 mm L4 = L8 = L9 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) L5 = 3 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 9 mm; leads 2 × 5 mm L6 = Cu strip (27 mm × 9 mm × 0,5 mm) L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 9 mm; leads 2 × 10 mm L2 is strip on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16 in. R1 = 10 Ω carbon resistor Note 1. ATC means American Technical Ceramics. August 1986 6 Philips Semiconductors Product specification VHF power transistor BLV25 270 80 C8 C10 L4 L3 L1 L7 strip strip L8, L9 C15 C13 +VCC R1 L5 C2 C11 strip C4, C5 stop stop L6 L2 strip C6, C7 C1 C3 C12 C16 C9 7 mm MGP300 The circuit and the components are on one side of the epoxy fibre-glass board, the other side is unetched copper to serve as a ground-plane. Earth connections are made by means of fixing screws. Additionally copper straps are used under the emitters and at the input and output to provide direct contact between the copper on the component side and the ground-plane. Fig.8 Component layout and printed-circuit board for 108 MHz class-B test circuit. August 1986 7 Philips Semiconductors Product specification VHF power transistor BLV25 MGP302 MGP301 200 250 handbook, halfpage handbook, halfpage PL (W) Th = 25 °C PL (W) 200 50 °C 70 °C 150 25 °C 100 50 °C 70 °C 100 50 0 1 10 0 102 VSWR 0 ——— f > 1 MHz (continuous); − − − − short time operation during mismatch (f > 1 MHz). MGP303 30 η handbook, halfpage ri, xi η (%) Gp MGP304 1 80 (Ω) 60 0.5 8 40 0 4 20 −0.5 12 PS (W) Fig.10 Load power as a function of source power. 16 Gp (dB) 20 Test circuit tuned for each power level; typical values; VCE = 28 V; f = 108 MHz; Th = 25 °C; class-B operation. Fig.9 R.F. SOAR. handbook, halfpage 10 ri xi 0 0 100 200 PL (W) −1 0 300 20 Test circuit tuned for each power level; typical values; VCE = 28 V; f = 108 MHz; Th = 25 °C; class-B operation. f (MHz) 120 Typical values; VCE = 28 V; PL = 175 W; Th = 25 °C; class-B operation. Fig.12 Input impedance (series components). Fig.11 Power gain and efficiency as a function of source power. August 1986 70 8 Philips Semiconductors Product specification VHF power transistor BLV25 MGP305 3 MGP306 20 handbook, halfpage handbook, halfpage RL, XL (Ω) RL Gp (dB) 2 10 1 XL 0 20 70 f (MHz) 0 20 120 Typical values; VCE = 28 V; PL = 175 W; Th = 25 °C; class-B operation. f (MHz) 120 Typical values; VCE = 28 V; PL = 175 W; Th = 25 °C; class-B operation. Fig.13 Load impedance (series components). Fig.14 Power gain as a function of frequency. OPERATING NOTE for Figs 12, 13 and 14: Below 50 MHz a base-emitter resistor of 4,7 Ω is recommended to avoid oscillation. This resistor must be effective for r.f. only. August 1986 70 9 Philips Semiconductors Product specification VHF power transistor BLV25 PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 6 leads SOT119A A F q C U1 B H1 w2 M C b2 2 H c 4 6 p U2 D1 U3 D w1 M A B A 1 3 5 b1 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b b1 b2 mm 7.39 6.32 5.59 5.33 5.34 5.08 4.07 3.81 inches c D w2 w3 4.58 25.23 6.48 12.76 18.42 0.51 3.98 23.95 6.07 12.06 1.02 0.26 0.291 0.220 0.210 0.160 0.007 0.505 0.505 0.100 0.870 0.730 0.130 0.180 0.993 0.255 0.502 0.725 0.02 0.255 0.249 0.210 0.200 0.150 0.003 0.496 0.495 0.090 0.830 0.720 0.117 0.157 0.943 0.239 0.475 0.04 0.01 OUTLINE VERSION e D1 0.18 12.86 12.83 6.48 0.07 12.59 12.57 F H JEDEC EIAJ SOT119A August 1986 p 2.54 22.10 18.55 3.31 2.28 21.08 18.28 2.97 REFERENCES IEC H1 Q q U1 U2 U3 EUROPEAN PROJECTION w1 ISSUE DATE 97-06-28 10 Philips Semiconductors Product specification VHF power transistor BLV25 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1986 11