ICS GA150TS60U

PD - 50056D
GA150TS60U
"HALF-BRIDGE" IGBT INT-A-PAK
Ultra-FastTM Speed IGBT
Features
• Generation 4 IGBT technology
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft
recovery
• Industry standard package
• UL approved
VCES = 600V
VCE(on) typ. = 1.7V
@VGE = 15V, IC = 150A
Benefits
• Increased operating efficiency
• Direct mounting to heatsink
• Performance optimized for power conversion: UPS,
SMPS, Welding
• Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
ICM
ILM
IFM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 85°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Pulsed Collector CurrentQ
Peak Switching CurrentR
Peak Diode Forward Current
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal To Case, t = 1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Max.
Units
600
150
300
300
300
±20
2500
440
230
-40 to +150
-40 to +125
V
A
V
W
°C
Thermal / Mechanical Characteristics
Parameter
RθJC
RθJC
RθCS
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Thermal Resistance, Junction-to-Case - IGBT
Thermal Resistance, Junction-to-Case - Diode
Thermal Resistance, Case-to-Sink - Module
Mounting Torque, Case-to-Heatsink S
Mounting Torque, Case-to-Terminal 1, 2 & 3 T
Weight of Module
Typ.
Max.
—
—
0.1
—
—
200
0.28
0.35
—
6.0
5.0
—
Units
°C/W
N. m
g
1
05/20/02
GA150TS60U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Parameter
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Voltage
Min. Typ. Max. Units
Conditions
600
—
—
VGE = 0V, IC = 1mA
—
1.7 2.3
VGE = 15V, IC = 150A
—
1.7
—
V
VGE = 15V, IC = 150A, TJ = 125°C
Gate Threshold Voltage
3.0
—
6.0
IC = 750µA
Temperature Coeff. of Threshold Voltage —
-11
— mV/°C VCE = V GE, IC = 750µA
Forward Transconductance T
—
152 —
S
VCE = 25V, I C = 150A
Collector-to-Emitter Leaking Current
—
—
1.0
mA
VGE = 0V, VCE = 600V
—
—
10
VGE = 0V, VCE = 600V, TJ = 125°C
Diode Forward Voltage - Maximum
—
3.3
—
V
IF = 150A, VGE = 0V
—
3.2
—
IF = 150A, VGE = 0V, TJ = 125°C
Gate-to-Emitter Leakage Current
—
— 250
nA
VGE = ±20V
Dynamic Characteristics - TJ = 125°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff (1)
Ets (1)
Cies
Coes
Cres
trr
Irr
Qrr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During tb
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
624
87
212
241
145
336
227
6.0
12
19
14000
860
180
172
113
9696
2000
Max. Units
Conditions
937
VCC = 400V
130
nC
IC = 94A
317
TJ = 25°C
—
RG1 = 27Ω, RG2 = 0Ω,
—
ns
IC = 150A
—
VCC = 360V
—
VGE = ±15V
—
mJ
—
33
—
VGE = 0V
—
pF
VCC = 30V
—
ƒ = 1 MHz
—
ns
IC = 150A
—
A
RG1 = 27Ω
—
nC
RG2 = 0Ω
—
A/µs VCC = 360V
di/dt =1300A/µs
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GA150TS60U
120
F o r b o th :
D u ty c y c le : 5 0 %
TJ = 1 2 5 ° C
T sink = 9 0 ° C
G a te d riv e a s s p e c ifie d
LOAD CURRENT (A)
100
80
P o w e r D is s ip a tio n = 92 W
S q u a re w a v e :
6 0 % o f ra te d
v o lta g e
60
I
40
Id e a l d io d e s
20
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
I C , Collector-to-Emitter Current (A)
TJ = 25 o C
TJ = 125 o C
100
V
= 15V
20µs PULSE WIDTH
GE
10
1
2
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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3
I C , Collector-to-Emitter Current (A)
1000
1000
TJ = 125 oC
100
TJ = 25 oC
10
V
= 50V
5µs PULSE WIDTH
25V
VCC
CE = 25V
80µs PULSE WIDTH
1
5
6
7
8
9
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
GA150TS60U
3.0
V
= 15V
80 us PULSE WIDTH
GE
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
160
120
80
40
0
25
50
75
100
125
I C = 300 A
2.0
I C = 150 A
I C = 75 A
1.0
-60 -40 -20
150
TC , Case Temperature ( ° C)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Th erm a l Im p e d an ce - Z
th J C
1
D = 0.5 0
0.1
0.20
0 .1 0
0 .05
0 .02
0 .0 1
PDM
t
1
t2
S in g le P u ls e
(Th e rm a l R e sis ta n c e )
Notes:
1. Duty factor D = t
1
/t
2
2. Peak TJ = PDM x Z thJC + T C
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t 1 , R ec ta ng ular P u lse D u ra tio n (Se c o n d s)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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GA150TS60U
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
C, Capacitance (pF)
20000
Cies
15000
10000
Coes
Cres
5000
20
VGE , Gate-to-Emitter Voltage (V)
25000
0
1
10
12
8
4
0
100
0
100
Total Switching Losses (mJ)
Total Switching Losses (mJ)
20
15
10
10
20
30
40
Gate Resistance
Resistance (Ohm)
(Ω)
RRGG1, ,Gate
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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200
300
400
500
600
700
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
V CC = 360V
V GE = 15V
°C
125°C
TJ = 25
I C = 150A
0
100
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
25
VCC = 400V
I C = 94A
16
VCE , Collector-to-Emitter Voltage (V)
30
50
RG
Ω;RG2 = 0 Ω
= Ohm
G1 =27
VGE = 15V
VCC = 360V
IC = 300 A
IC = 150 A
IC = 75 A
10
1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
GA150TS60U
50
400
RG
Ω;RG2 = 0 Ω
= Ohm
G1=27
Total Switching Losses (mJ)
T J = 150 ° C
VCC = 360V
40 VGE = 15V
V G E = 20V
T J = 125°C
V C E m easured at term inal (Peak V oltage)
350
300
250
30
SAFE O PERATING AREA
200
20
150
100
10
50
A
0
0
0
50
100
150
200
250
300
0
100
200
300
400
500
600
700
VCE , Collector-to-Emitter Voltage (V)
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Reverse Bias SOA
1000
16000
I F = 1 50 A
I F = 75 A
12000
Q R R - (nC )
In sta n ta n e o u s F o rw a rd C u rre n t - I F (A )
I F = 3 00 A
100
T J = 125 °C
T J = 25°C
8000
4000
VR = 3 6 0V
TJ = 1 25 °C
TJ = 2 5°C
10
1.0
2.0
3.0
4.0
5.0
F o rw a rd V o lta g e D ro p - V F M (V )
Fig. 13 - Typical Forward Voltage Drop vs.
Instantaneous Forward Current
6
0
500
1000
1500
2000
di f /dt - (A /µs)
Fig. 14 - Typical Stored Charge vs. dif/dt
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GA150TS60U
300
200
I F = 30 0A
I F = 30 0A
I F = 15 0A
160
I F = 75 A
I F = 15 0A
I F = 75 A
t rr - (ns)
I R R M - (A )
200
120
80
100
40
VR = 3 6 0V
TJ = 1 25 °C
TJ = 2 5°C
0
500
VR = 3 6 0V
T J = 1 25 °C
T J = 2 5°C
1000
1500
2000
d i f /dt - (A /µs)
Fig. 15 - Typical Reverse Recovery vs. dif/dt
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0
500
1000
1500
2000
di f /dt - (A /µs)
Fig. 16 - Typical Recovery Current vs. dif/dt
7
GA150TS60U
90% Vge
+Vge
Vce
Ic
9 0 % Ic
10% Vce
Ic
5 % Ic
td (o ff)
tf
Eoff =
∫
t1 + 5 µ S
V c e icIcd tdt
Vce
t1
Fig. 17 - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18 - Test Waveforms for Circuit of Fig. 17, Defining Eoff,
td(off), tf
G A T E V O L T A G E D .U .T .
1 0 % +V g
trr
Q rr =
Ic
∫
trr
id
t
Icddt
tx
+Vg
tx
10% Vcc
1 0 % Irr
V cc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
Vcc
1 0 % Ic
Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
tr
td (o n )
5% Vce
t1
∫
t2
ce ieIcd t dt
E o n = VVce
t1
t2
E re c =
D IO D E R E V E R S E
REC OVERY ENER GY
t3
Fig. 19 - Test Waveforms for Circuit of Fig. 17,
Defining Eon, td(on), tr
8
∫
t4
VVd
d idIc
d t dt
t3
t4
Fig. 20 - Test Waveforms for Circuit of Fig. 17,
Defining Erec, trr, Qrr, Irr
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GA150TS60U
V g G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 21. Macro Waveforms for Figure 17's Test Circuit
RL=
480V
4 X IC @25°C
0 - 480V
Figure 22. Pulsed Collector Current
Test Circuit
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9
GA150TS60U
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
R See fig. 17
S For screws M6.
T For screws M5.
U Pulse width 50µs; single shot.
Case Outline — INT-A-PAK
94.70
93.70
80.30
79.70
3.689]
[3.728
NOTES :
1. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ].
2. CONTROL LING DIMENS ION: MILLIMETER.
[ ]
3.161
3.138
2X 23.50
22.50
.886]
[.925
4.50
3.50
11
10
34.70
33.70
.138]
[.177
6
7
1.327]
[1.366
17.50
16.50
1
2
8
9
5
4
3X M5
8 [.314]
MAX.
42.00
41.00
0.15 [.0059] CONVEX
92.10
91.10
3.587]
[3.626
.650]
[.689
3
1.614]
[1.654
6.80
2X Ø 6.20
8.00
6.60
.260]
[.315
24.00
23.00
.906]
[.945
.244]
[.267
4X FAST ON TAB (110)
2.8 x 0.5 [.110 x .020]
30.50
29.00
8.65
7.65
1.142 ]
[1.201
2X 13.30
12.70
.301 ]
[.341
32.00
31.00
.500]
[.524
[ ]
1.260
1.220
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/02
10
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