DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3294 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3294 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter, actuator driver. PART NUMBER PACKAGE 2SK3294 TO-220AB 2SK3294-S TO-262 2SK3294-ZJ TO-263(MP-25ZJ) FEATURES • Gate voltage rating ±30 V • Low on-state resistance (TO-220AB) RDS(on) = 160 mΩ MAX. (VGS = 10 V, ID = 10 A) • Low input capacitance Ciss = 1500 pF TYP. (VDS = 10 V, VGS = 0 V) • Avalanche capability rated • Built-in gate protection diode • Surface mount device available ABSOLUTE MAXIMUM RATINGS (T A = 25°C) (TO-262) Drain to Source Voltage (VGS = 0 V) VDSS 250 V Gate to Source Voltage (VDS = 0 V) VGSS ±30 V Drain Current (DC) (TC = 25°C) ID(DC) ±20 A ID(pulse) ±60 A Drain Current (Pulse) Note1 Total Power Dissipation (TC = 25°C) PT1 100 W Total Power Dissipation (TA = 25°C) PT2 1.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg −55 to +150 °C Single Avalanche Current Note2 Single Avalanche Energy Note2 IAS 20 A EAS 150 mJ (TO-263) Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 150 V, RG = 25 Ω, VGS = 20 V→0 V The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14061EJ1V0DS00 (1st edition) Date Published August 2001 NS CP (K) Printed in Japan © 1999,2001 2SK3294 ELECTRICAL CHARACTERISTICS (T A = 25°C) Characteristics Symbol Test Conditions MIN. TYP. MAX. Unit 100 µA ±10 µA 4.5 V Zero Gate Voltage Drain Current IDSS VDS = 250 V, VGS = 0 V Gate Leakage Current IGSS VGS = ±30 V, VDS = 0 V Gate Cut-off Voltage VGS(off) VDS = 10 V, ID = 1 mA 2.5 Forward Transfer Admittance | yfs | VDS = 10 V, ID = 10 A 6.0 Drain to Source On-state Resistance RDS(on) VGS = 10 V, ID = 10 A 120 Input Capacitance Ciss VDS = 10 V 1500 pF Output Capacitance Coss VGS = 0 V 360 pF Reverse Transfer Capacitance Crss f = 1 MHz 220 pF Turn-on Delay Time td(on) VDD = 125 V , ID = 10 A 24 ns Rise Time tr VGS = 10 V 78 ns Turn-off Delay Time td(off) RG = 10 Ω 110 ns Fall Time tf 60 ns Total Gate Charge QG VDD = 200 V 57 nC Gate to Source Charge QGS VGS = 10 V 8 nC Gate to Drain Charge QGD ID = 20 A 36 nC Body Diode Forward Voltage VF(S-D) IF = 20 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 20 A, VGS = 0 V 340 ns Reverse Recovery Charge Qrr di/dt = 50 A/µs 2.1 µC TEST CIRCUIT 1 AVALANCHE CAPABILITY S mΩ 160 TEST CIRCUIT 2 SWITCHING TIME D.U.T. RG = 25 Ω D.U.T. L RL PG. 50 Ω VDD VGS = 20 V → 0 V RG PG. VGS VGS Wave Form 0 90% ID VGS 0 ID Starting Tch τ = 1 µs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. 2 IG = 2 mA RL 50 Ω VDD 10% 0 10% Wave Form τ VDD PG. 90% BVDSS VDS ID 90% VDD ID IAS VGS 10% Data Sheet D14061EJ1V0DS tr td(off) td(on) ton tf toff 2SK3294 TYPICAL CHARACTERISTICS (T A = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 60 10 ID - Drain Current - A ID - Drain Current - A 50 40 30 20 Tch = 125˚C 75˚C 25˚C -25˚C 1 0.1 0.01 10 0 10 5 0 VGS = 10 V Pulsed 15 20 VDS = 10 V Pulsed 0.001 0 VDS - Drain to Source Voltage - V |yfs| - Forward Transfer Admittance - S VGS(off) - Gate Cut-off Voltage - V 4.0 3.0 2.0 1.0 0 25 50 75 100 125 150 4A 200 100 0 4 8 12 16 VGS - Gate to Source Voltage - V 20 RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance -mΩ ID = 20 A 10 A 0 10 12 VDS = 10 V Pulsed Tch = −25˚C 25˚C 75˚C 125˚C 10 1 0.1 0.01 0.01 0.1 10 1 100 ID- Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 500 Pulsed 300 8 100 Tch - Channel Temperature - ˚C 400 6 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V ID = 1 mA −50 −25 4 VGS - Gate to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 5.0 2 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 500 VGS = 10 V Pulsed 400 300 200 100 0 0.1 1 10 100 ID - Drain Current - A Data Sheet D14061EJ1V0DS 3 2SK3294 SOURCE TO DRAIN DIODE FORWARD VOLTAGE RDS (on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 ISD - Diode Forward Current - A 400 300 ID = 20 A 200 10 A 100 0 −50 0 VGS = 10 V Pulsed 100 150 50 VGS = 10 V 10 0V 1 0.1 Pulsed 0.01 0.0 0.5 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS 1000 td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF 10000 Ciss 1000 Coss Crss VGS = 0 V f = 1 MHz 10 0.1 10 100 tr td(off) 100 tf td(on) 10 1 0.1 1 1.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C 100 1.0 VDD = 125 V VGS = 10 V RG = 10 Ω 10 100 1 1000 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT VDS - Drain to Source Voltage - V trr - Reverse Recovery Time - ns 1000 100 10 1 0.1 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 12 360 VGS 10 300 VDD = 200 V 125 V 8 240 50 V 10 VDS 2 60 100 ID - Drain Current - A 4 4 120 di/dt = 50 A/ µs VGS = 0 V 1 6 180 Data Sheet D14061EJ1V0DS ID = 20 A 0 0 10 20 30 40 QG - Gate Charge - nC 50 0 60 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V 2SK3294 DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 140 100 80 60 40 20 0 0 20 40 60 80 120 100 80 60 40 20 0 100 120 140 160 0 20 40 60 80 100 120 140 160 TC - Case Temperature - ˚C Tch - Channel Temperature - ˚C FORWARD BIAS SAFE OPERATING AREA ID(pulse) ) (on DS R d ite Lim ID(DC) 10 Po we r 0.1 PW 10 0µ s 1m 3m s 10 s m DC s Di ss ipa tio n 1 =1 0µ s Lim ite d TC = 25˚C Single Pulse 1 10 100 1000 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 Rth(ch-A) = 83.3˚C/W rth(t) - Transient Thermal Resistance - ˚C/W ID - Drain Current - A 100 10 1 Rth(ch-C) = 1.25˚C/W 0.1 0.01 10 µ Single Pulse 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - sec Data Sheet D14061EJ1V0DS 5 2SK3294 SINGLE AVALANCHE ENERGY DERATING FACTOR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD IAS = 20 A EA S= 10 15 0m J 1 0.01 VDD = 150 V VGS = 20 V → 0 V RG = 25 Ω 0.1 1 Energy Derating Factor - % IAS - Single Avalanche Current - A 100 10 L - Inductive Load - mH 6 VDD = 150 V RG = 25 Ω VGS = 20 V → 0 V IAS ≤ 20 A 100 80 60 40 20 0 25 50 75 100 125 150 Starting Tch - Starting Channel Temperature - ˚C Data Sheet D14061EJ1V0DS 2SK3294 PACKAGE DRAWINGS (Unit: mm) 4.8 MAX. 3.0±0.3 10.6 MAX. φ 3.6±0.2 10 TYP. 1.3±0.2 4 1 1 2 3 3 12.7 MIN. 6.0 MAX. 1.3±0.2 1.3±0.2 0.75±0.3 2.54 TYP. 0.5±0.2 0.75±0.1 2.54 TYP. 2 1.3±0.2 0.5±0.2 2.8±0.2 2.54 TYP. 2.8±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain) 3)TO-263 (MP-25ZJ) 4.8 MAX. 12.7 MIN. 4 15.5 MAX. 5.9 MIN. 10.0 TYP. 1.0±0.5 2)TO-262 8.5±0.2 1)TO-220AB (MP-25) EQUIVALENT CIRCUIT 4.8 MAX. 10 TYP. Drain 1.3±0.2 2 3 5.7±0.4 1 8.5±0.2 1.0±0.5 4 1.4±0.2 0.7±0.2 . YP R 0.5 2.54 TYP. 2.8±0.2 2.54 TYP. Body Diode Gate T R 0.8 Gate Protection Diode . P TY Source 0.5±0.2 1.Gate 2.Drain 3.Source 4.Fin (Drain) Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Data Sheet D14061EJ1V0DS 7 2SK3294 • The information in this document is current as of August, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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