Silicon Junction FETs (Small Signal) 2SK3427 Silicon N-Channel Junction Unit: mm For impedance conversion in low frequency For electret capacitor microphone +0.10 +0.02 0.12 –0.01 2.1±0.1 0.40 –0.05 ■ Features 2 2.20±0.15 1 5˚ 1.5±0.2 • High mutual conductance gm • Low noise voltage of NV 5.8±0.2 3 ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Drain-source voltage VDSO 20 V Drain-gate voltage VDGO 20 V Drain-source current IDSO 2 mA Drain-gate current IDGO 2 mA Gate-source current IGSO 2 mA Allowable power dissipation PD 200 mW Operating ambient temperature Topr −20 to +80 °C Storage temperature Tstg −55 to +150 °C (0.5) 1.9±0.1 2.9±0.2 10˚ 0.7±0.1 Parameter (0.95) (0.95) 1: Drain 2: Source 3: Gate MiniT3-F1 Package Marking Symbol: 5E ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Drain current Symbol ID Conditions Min VDS = 2.0 V, RD = 2.2 kΩ ± 1% 100 Typ IDSS VDS = 2.0 V, RD = 2.2 kΩ ± 1%, VGS = 0 107 Mutual conductance gm VD = 2.0 V, VGS = 0, f = 1 kHz 660 Noise voltage NV VD = 2.0 V, RD = 2.2 kΩ ± 1% CO = 5 pF, A-Curve Voltage gain GV1 VD = 2.0 V, RD = 2.2 kΩ ± 1% CO = 5 pF, eG = 10 mV, f = 1 kHz −7.5 −4.7 GV2 VD = 12 V, RD = 2.2 kΩ ± 1% CO = 5 pF, eG = 10 mV, f = 1 kHz −4.0 −1.5 GV3 VD = 1.5 V, RD = 2.2 kΩ ± 1% CO = 5 pF, eG = 10 mV, f = 1 kHz −8.0 −5.0 ∆GV. f* Voltage gain difference Max Unit 460 µA 470 µS 1 600 10 VD = 2.0 V, RD = 2.2 kΩ ± 1% CO = 5 pF, eG = 10 mV, f = 1 kHz to 70 Hz 0 µV dB 1.7 GV2 − GV1 0 4.0 GV1 − GV3 0 1.7 dB Note) *: ∆GV. f is assured for AQL 0.065%. (the measurement method is used by source-grounded circuit.) Publication date: April 2002 SJF00034AED 1 2SK3427 PD Ta ID VDS VDS = 2 V 0.25 150 100 1.2 0.3 V 1.0 0.2 V 0.8 0.6 0.1 V 0.4 50 0V 0.2 0 20 40 60 0 80 100 120 140 160 0 2 8 10 Yfs ID VDS = 2 V Ta = 25°C VDS = 2 V 1.0 0.8 0.6 0.4 0.2 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 – 0.8 6 1.6 1.2 0 – 1.0 4 Drain-source voltage VDS (V) Forward transadmittance Yfs (mS) 1.4 – 0.6 – 0.4 – 0.2 Gate-source voltage VGS (V) 0 0.20 Ta = 75°C 0.15 25°C 0.10 −25°C 0.05 − 0.1 V Yfs VGS 1.6 Drain current ID (mA) 200 Ambient temperature Ta (°C) Forward transadmittance Yfs (mS) VGS = 0.4 V Ta = 25°C 1.4 0 2 ID VGS 0.30 1.6 Drain current ID (mA) Allowable power dissipation PD (mW) 250 0 20 40 60 80 100 120 140 150 160 200 Drain current ID (µA) SJF00034AED 0 – 0.5 – 0.4 – 0.3 – 0.2 – 0.1 Gate-source voltage VGS (V) 0 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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