PZTA13, PZTA14 NPN Silicon Darlington Transistors For general AF applications 4 High collector current High current gain Complementary types: PZTA63, PZTA64 (PNP) 3 2 1 Type Marking Pin Configuration PZTA13 PZTA 13 1=B 2=C 3=E 4=C SOT223 PZTA14 PZTA 14 1=B 2=C 3=E 4=C SOT223 VPS05163 Package Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCES 30 Collector-base voltage VCBO 30 Emitter-base voltage VEBO 10 DC collector current IC 300 mA Peak collector current ICM 500 mA Base current IB 100 Peak base current IBM 200 Total power dissipation, TS = 124 °C Ptot 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg V -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 17 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 PZTA13, PZTA14 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)CES 30 - - V(BR)CBO 30 - - V(BR)EBO 10 - - ICBO - - 100 nA ICBO - - 10 µA IEBO - - 100 nA DC Characteristics Collector-emitter breakdown voltage V IC = 100 µA, VBE = 0 Collector-base breakdown voltage IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 30 V, IE = 0 Collector cutoff current VCB = 30 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 10 V, IC = 0 DC current gain 1) IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V - hFE PZTA13 5000 - - PZTA14 10000 - - PZTA13 10000 - - PZTA14 20000 - - VCEsat - - 1.5 VBEsat - - 2 125 - - Collector-emitter saturation voltage1) V IC = 100 mA, IB = 0.1 mA Base-emitter saturation voltage 1) IC = 100 mA, IB = 0.1 mA AC Characteristics Transition frequency fT MHz I C = 50 mA, V CE = 5 V, f = 100 MHz 1) Pulse test: t ≤ 300µs, D = 2% 2 Nov-30-2001 PZTA13, PZTA14 Total power dissipation Ptot = f(TS) Transition frequency fT = f (IC) VCE = 5V, f = 100MHz 10 3 MHz 1650 mW fT 1350 PZTA 13/14 EHP00717 5 P tot 1200 1050 900 10 2 750 600 5 450 300 150 0 0 15 30 45 60 75 90 105 120 10 1 10 0 °C 150 TS 5 10 1 5 10 2 DC current gain hFE = f (I C) VCB = 30V VCE = 5V PZTA 13/14 EHP00718 nA 10 6 h FE Ι CB0 10 3 ΙC Collector cutoff current ICBO = f (TA) 10 4 mA PZTA 13/14 EHP00719 5 max 10 3 10 5 5 25 ˚C 5 typ 10 2 125 ˚C -55 ˚C 5 10 4 10 1 5 10 0 5 0 50 100 ˚C 10 3 10 -1 150 10 0 10 1 10 2 mA 10 3 ΙC TA 3 Nov-30-2001 PZTA13, PZTA14 Collector-emitter saturation voltage Base-emitter saturation voltage IC = f (VCEsat ), hFE = 1000 IC = f (VBEsat), hFE = 1000 10 3 PZTA 13/14 EHP00720 10 3 PZTA 13/14 EHP00721 mA mA ΙC ΙC 150 ˚C 25 ˚C -50 ˚C 10 2 10 2 5 5 10 1 10 1 5 5 10 0 0 0.5 1.0 V 150 ˚C 25 ˚C -50 ˚C 10 0 1.5 0 1.0 2.0 V 3.0 V BEsat V CEsat Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 PZTA 13/14 Ptot max 5 Ptot DC EHP00311 D= tp T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 10 1 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 Nov-30-2001