BTA1721N3

CYStech Electronics Corp.
Spec. No. : C308N3
Issued Date : 2002.06.11
Revised Date : 2013.10.31
Page No. : 1/7
General Purpose PNP Epitaxial Planar Transistor
BTA1721N3
Description
• High breakdown voltage.
• Low collector output capacitance.
• Ideal for chroma circuit.
• Pb-free lead plating and halogen-free package
Symbol
Outline
BTA1721N3
SOT-23
B:Base
C:Collector
E:Emitter
Ordering Information
Device
BTA1721N3-X-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTA1721N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C308N3
Issued Date : 2002.06.11
Revised Date : 2013.10.31
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
-300
-300
-5
-500
225
150
-55~+150
Unit
V
V
V
mA
mW
°C
°C
Thermal Characteristics
Symbol
Rth,j-c
Rth, j-a
Parameter
thermal resistance from junction to case
thermal resistance from junction to ambient
Conditions
(Note )
Value
223
556
Unit
℃/W
℃/W
Note : Free air condition
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE
*hFE
*hFE
fT
Cob
Min.
-300
-300
-5
90
100
50
50
-
Typ.
-
Max.
-0.1
-0.1
-0.5
-0.9
270
6
Unit
V
V
V
μA
μA
V
V
MHz
pF
Test Conditions
IC=-100μA
IC=-1mA
IE=-100μA
VCB=-200V
VEB=-4V
IC=-20mA, IB=-2mA
IC=-20mA, IB=-2mA
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
VCE=-10V, IC=-30mA
VCE=-20V, IC=-10mA, f=100MHz
VCB=-20V, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE
Rank
Range
BTA1721N3
P
100~180
Q
120~270
CYStek Product Specification
Spec. No. : C308N3
Issued Date : 2002.06.11
Revised Date : 2013.10.31
Page No. : 3/7
CYStech Electronics Corp.
Typical Characteristics
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
10000
1000
VCE=10V
VCE(SAT)
Saturation Voltage---(mV)
Current Gain--- HFE
HFE
100
VCE=5V
10
1000
IC=20IB
100
IC=10IB
10
1
1
10
100
Collector Current---IC(mA)
1
1000
10
100
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
On Voltage vs Collector Current
1000
On Voltage---(mV)
Saturation Voltage---(mV)
1000
VBE(SAT)@IC=10IB
[email protected]=10V
100
100
1
10
100
Collector Current---IC(mA)
1
1000
10
100
Collector Current---IC(mA)
1000
Power Derating Curve
Cutoff Frequency vs Collector Current
250
Power Dissipation---PD(mW)
Cutoff Frequency---fT(MHz)
100
[email protected]=20V
10
200
150
100
50
0
1
BTA1721N3
10
Collector Current---IC(mA)
100
0
50
100
150
Ambient Temperature ---Ta(℃ )
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C308N3
Issued Date : 2002.06.11
Revised Date : 2013.10.31
Page No. : 4/7
Recommended Soldering Footprint
BTA1721N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C308N3
Issued Date : 2002.06.11
Revised Date : 2013.10.31
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
BTA1721N3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C308N3
Issued Date : 2002.06.11
Revised Date : 2013.10.31
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTA1721N3
CYStek Product Specification
Spec. No. : C308N3
Issued Date : 2002.06.11
Revised Date : 2013.10.31
Page No. : 7/7
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
Product Code
2D
Date Code: Year+Month
Year: 3→2003, 4→2004
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Base 2.Emitter 3.Collector
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTA1721N3
CYStek Product Specification