CYStech Electronics Corp. Spec. No. : C308N3 Issued Date : 2002.06.11 Revised Date : 2013.10.31 Page No. : 1/7 General Purpose PNP Epitaxial Planar Transistor BTA1721N3 Description • High breakdown voltage. • Low collector output capacitance. • Ideal for chroma circuit. • Pb-free lead plating and halogen-free package Symbol Outline BTA1721N3 SOT-23 B：Base C：Collector E：Emitter Ordering Information Device BTA1721N3-X-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name BTA1721N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C308N3 Issued Date : 2002.06.11 Revised Date : 2013.10.31 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits -300 -300 -5 -500 225 150 -55~+150 Unit V V V mA mW °C °C Thermal Characteristics Symbol Rth,j-c Rth, j-a Parameter thermal resistance from junction to case thermal resistance from junction to ambient Conditions (Note ) Value 223 556 Unit ℃/W ℃/W Note : Free air condition Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) *hFE *hFE *hFE fT Cob Min. -300 -300 -5 90 100 50 50 - Typ. - Max. -0.1 -0.1 -0.5 -0.9 270 6 Unit V V V μA μA V V MHz pF Test Conditions IC=-100μA IC=-1mA IE=-100μA VCB=-200V VEB=-4V IC=-20mA, IB=-2mA IC=-20mA, IB=-2mA VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-30mA VCE=-20V, IC=-10mA, f=100MHz VCB=-20V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Classification Of hFE Rank Range BTA1721N3 P 100~180 Q 120~270 CYStek Product Specification Spec. No. : C308N3 Issued Date : 2002.06.11 Revised Date : 2013.10.31 Page No. : 3/7 CYStech Electronics Corp. Typical Characteristics Current Gain vs Collector Current Saturation Voltage vs Collector Current 10000 1000 VCE=10V VCE(SAT) Saturation Voltage---(mV) Current Gain--- HFE HFE 100 VCE=5V 10 1000 IC=20IB 100 IC=10IB 10 1 1 10 100 Collector Current---IC(mA) 1 1000 10 100 Collector Current---IC(mA) Saturation Voltage vs Collector Current On Voltage vs Collector Current 1000 On Voltage---(mV) Saturation Voltage---(mV) 1000 VBE(SAT)@IC=10IB VBEON@VCE=10V 100 100 1 10 100 Collector Current---IC(mA) 1 1000 10 100 Collector Current---IC(mA) 1000 Power Derating Curve Cutoff Frequency vs Collector Current 250 Power Dissipation---PD(mW) Cutoff Frequency---fT(MHz) 100 fT@VCE=20V 10 200 150 100 50 0 1 BTA1721N3 10 Collector Current---IC(mA) 100 0 50 100 150 Ambient Temperature ---Ta(℃ ) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C308N3 Issued Date : 2002.06.11 Revised Date : 2013.10.31 Page No. : 4/7 Recommended Soldering Footprint BTA1721N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C308N3 Issued Date : 2002.06.11 Revised Date : 2013.10.31 Page No. : 5/7 Reel Dimension Carrier Tape Dimension BTA1721N3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C308N3 Issued Date : 2002.06.11 Revised Date : 2013.10.31 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTA1721N3 CYStek Product Specification Spec. No. : C308N3 Issued Date : 2002.06.11 Revised Date : 2013.10.31 Page No. : 7/7 CYStech Electronics Corp. SOT-23 Dimension Marking: Product Code 2D Date Code: Year+Month Year: 3→2003, 4→2004 Month: 1→1, 2→2,‧‧‧ 9→9, A→10, B→11, C→12 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Base 2.Emitter 3.Collector Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA1721N3 CYStek Product Specification