DTC114TN3

CYStech Electronics Corp.
Spec. No. : C353N3
Issued Date : 2002.06.01
Revised Date : 2015.09.03
Page No. : 1/6
NPN Digital Transistors (Built-in Resistors)
DTC114TN3
Features
• Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
resistors (see equivalent circuit).
• The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the
input. They also have the advantage of almost completely eliminating parasitic effects.
• Only the on/off conditions need to be set for operation, making device design easy.
• Complements the DTA114TN3
• Pb-free lead plating & Halogen-free package.
Equivalent Circuit
Outline
SOT-23
DTC114TN3
R1=10 kΩ
B:Base
C:Collector
E:Emitter
Ordering Information
Device
DTC114TN3-0-T1-G
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
DTC114TN3
CYStek Product Specification
Spec. No. : C353N3
Issued Date : 2002.06.01
Revised Date : 2015.09.03
Page No. : 2/6
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Symbol
Limits
Unit
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
50
50
5
100
200
-55~+150
-55~+150
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta=25°C)
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Gain
Input Resistance
Transition Frequency
Symbol
VCBO
VCEO
VEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min. Typ. Max. Unit
50
V
50
V
5
V
0.5 μA
0.5 μA
0.3
V
100
600
7
10
13
kΩ
250
MHz
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=50V
VEB=4V
IC=10mA, IB=1mA
VCE=5V, IC=1mA
VCE=10V, IC=5mA, f=100MHz *
* Transition frequency of the device
Recommended Soldering Footprint
DTC114TN3
CYStek Product Specification
Spec. No. : C353N3
Issued Date : 2002.06.01
Revised Date : 2015.09.03
Page No. : 3/6
CYStech Electronics Corp.
Typical Characteristics
DC Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
Saturation Voltage---(mV)
Current Gain---HFE
1000
100
[email protected]=5V
VCE(SAT)@IC=10IB
100
10
10
0.1
1
10
100
1
10
100
Collector Current ---IC(mA)
Collector Current ---IC(mA)
Power Derating Curve
Power Dissipation---PD(mW)
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
DTC114TN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C353N3
Issued Date : 2002.06.01
Revised Date : 2015.09.03
Page No. : 4/6
Reel Dimension
Carrier Tape Dimension
DTC114TN3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C353N3
Issued Date : 2002.06.01
Revised Date : 2015.09.03
Page No. : 5/6
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
DTC114TN3
CYStek Product Specification
Spec. No. : C353N3
Issued Date : 2002.06.01
Revised Date : 2015.09.03
Page No. : 6/6
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
8E
Product Code
Date Code: Year+Month
Year: 5→2015, 6→2016
Month: 1→1, 2→2,‧‧‧
9→9, A→10, B→11, C→12
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style : Pin 1.Base 2.Emitter 3.Collector
*:Typical
Inches
Min.
Max.
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
DIM
A
B
C
D
G
H
Millimeters
Min.
Max.
2.80
3.04
1.20
1.70
0.89
1.30
0.30
0.50
1.70
2.30
0.00
0.10
DIM
J
K
L
S
V
L1
Inches
Min.
Max.
0.0032 0.0079
0.0118 0.0266
0.0335 0.0453
0.0830 0.1161
0.0098 0.0256
0.0118 0.0197
Millimeters
Min.
Max.
0.08
0.20
0.30
0.67
0.85
1.15
2.10
2.95
0.25
0.65
0.30
0.50
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead :Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DTC114TN3
CYStek Product Specification