CYStech Electronics Corp. Spec. No. : C353N3 Issued Date : 2002.06.01 Revised Date : 2015.09.03 Page No. : 1/6 NPN Digital Transistors (Built-in Resistors) DTC114TN3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). • The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. • Only the on/off conditions need to be set for operation, making device design easy. • Complements the DTA114TN3 • Pb-free lead plating & Halogen-free package. Equivalent Circuit Outline SOT-23 DTC114TN3 R1=10 kΩ B：Base C：Collector E：Emitter Ordering Information Device DTC114TN3-0-T1-G Package SOT-23 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / tape & reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T1 : 3000 pcs / tape & reel, 7” reel Product rank, zero for no rank products Product name DTC114TN3 CYStek Product Specification Spec. No. : C353N3 Issued Date : 2002.06.01 Revised Date : 2015.09.03 Page No. : 2/6 CYStech Electronics Corp. Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction Temperature Range Storage Temperature Range Symbol Limits Unit VCBO VCEO VEBO IC Pd Tj Tstg 50 50 5 100 200 -55~+150 -55~+150 V V V mA mW °C °C Electrical Characteristics (Ta=25°C) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current Collector-Emitter Saturation Voltage DC Current Gain Input Resistance Transition Frequency Symbol VCBO VCEO VEBO ICBO IEBO VCE(sat) hFE R fT Min. Typ. Max. Unit 50 V 50 V 5 V 0.5 μA 0.5 μA 0.3 V 100 600 7 10 13 kΩ 250 MHz Test Conditions IC=50μA IC=1mA IE=50μA VCB=50V VEB=4V IC=10mA, IB=1mA VCE=5V, IC=1mA VCE=10V, IC=5mA, f=100MHz * * Transition frequency of the device Recommended Soldering Footprint DTC114TN3 CYStek Product Specification Spec. No. : C353N3 Issued Date : 2002.06.01 Revised Date : 2015.09.03 Page No. : 3/6 CYStech Electronics Corp. Typical Characteristics DC Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 Saturation Voltage---(mV) Current Gain---HFE 1000 100 HFE@VCE=5V VCE(SAT)@IC=10IB 100 10 10 0.1 1 10 100 1 10 100 Collector Current ---IC(mA) Collector Current ---IC(mA) Power Derating Curve Power Dissipation---PD(mW) 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- Ta(℃ ) DTC114TN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C353N3 Issued Date : 2002.06.01 Revised Date : 2015.09.03 Page No. : 4/6 Reel Dimension Carrier Tape Dimension DTC114TN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C353N3 Issued Date : 2002.06.01 Revised Date : 2015.09.03 Page No. : 5/6 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. DTC114TN3 CYStek Product Specification Spec. No. : C353N3 Issued Date : 2002.06.01 Revised Date : 2015.09.03 Page No. : 6/6 CYStech Electronics Corp. SOT-23 Dimension Marking: 8E Product Code Date Code: Year+Month Year: 5→2015, 6→2016 Month: 1→1, 2→2,‧‧‧ 9→9, A→10, B→11, C→12 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style : Pin 1.Base 2.Emitter 3.Collector *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0669 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0000 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.70 0.89 1.30 0.30 0.50 1.70 2.30 0.00 0.10 DIM J K L S V L1 Inches Min. Max. 0.0032 0.0079 0.0118 0.0266 0.0335 0.0453 0.0830 0.1161 0.0098 0.0256 0.0118 0.0197 Millimeters Min. Max. 0.08 0.20 0.30 0.67 0.85 1.15 2.10 2.95 0.25 0.65 0.30 0.50 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead :Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYSrek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. DTC114TN3 CYStek Product Specification