BTB1580M3

CYStech Electronics Corp.
Spec. No. : C655M3
Issued Date : 2004.03.18
Revised Date :2014.11.06
Page No. : 1/8
PNP Epitaxial Planar Transistor
BTB1580M3
Description
The BTB1580M3 is a PNP Darlington transistor, designed for use in general purpose amplifier and low
speed switching application. Pb-free package process is adopted.
Equivalent Circuit
Outline
BTB1580M3
SOT-89
≒6K
B
B:Base
C:Collector
E:Emitter
C E
Ordering Information
Device
BTB1580M3-0-T2-G
Package
SOT-89
(Pb-free lead plating and halogen-free package)
Shipping
1000 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T2 :1000 pcs/tape & reel, 7” reel
Product rank, zero for no rank products
Product name
BTB1580M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C655M3
Issued Date : 2004.03.18
Revised Date :2014.11.06
Page No. : 2/8
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Thermal Resistance, Junction to Ambient
RθJA
Thermal Resistance, Junction to Case
RθJC
Power Dissipation
PD
Power Dissipation @ TC=25°C
Opeearting Junction Temperature Range
Storage Temperature Range
Tj
Tstg
Limits
-150
-150
-5
-4
-6 (Note 1)
208
125 (Note 2)
62.5 (Note 3)
85 (Note 4)
43
0.7
1.2 (Note 2)
2.4 (Note 3)
1.8 (Note 4)
3.5
-55~+175
-55~+175
Unit
V
A
C/W
W
C
Note : 1. Single Pulse Pw≦350μs, Duty≦2%.
2. When mounted on a FR-4 PCB with area measuring 10×10×1 mm.
3. When mounted on a ceramic board with area measuring 40×40×1mm.
4. When mounted on a FR-4 PCB with area measuring 30×30×1 mm.
Characteristics (Ta=25C)
Symbol
BVCEO
BVCBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
-150
-150
-
Typ.
-
4000
2000
-
-
Max.
-100
-1
-2
-1.2
-2.2
200
Unit
V
V
nA
μA
mA
V
V
pF
Test Conditions
IC=-1mA, IB=0
IC=-100μA, IE=0
VCB=-150V, IE=0
VCE=-150V, IB=0
VEB=-5V, IC=0
IC=-2A, IB=-2mA
VCE=-4V, IC=-2A
VCE=-4V, IC=-1A
VCE=-4V, IC=-2A
VCB=-10V, IE=0A, f=1MHz
*Pulse Test : Pulse Width 380μs, Duty Cycle2%
BTB1580M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C655M3
Issued Date : 2004.03.18
Revised Date :2014.11.06
Page No. : 3/8
Recommended soldering footprint
BTB1580M3
CYStek Product Specification
Spec. No. : C655M3
Issued Date : 2004.03.18
Revised Date :2014.11.06
Page No. : 4/8
CYStech Electronics Corp.
Typical Characteristics
Current Gain vs Collector Current
Current Gain vs Collector Current
100000
100000
VCE =-4V
140°C
10000
85°
C
25°C
25°C
HFE, Current Gain
HFE, Current Gain
VCE =-3V
1000
100
10000
85°C
140°C
1000
100
0°C
0°C
-40°C
-40°
10
10
1
10
100
1000
-IC, Collector Current(mA)
10000
1
10000
-VCESAT, Saturation Voltage(mV)
10000
-VCESAT, Saturation Voltage(mV)
10000
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
VCESAT @IC=250IB
1000
-40°C
0°C
25°C
85°C
140°C
100
VCESAT @IC=500IB
1000
-40°C
0°C
25°C
85°C
140°C
100
10
100
1000
-IC, Collector Current(mA)
10000
10
Saturation Voltage vs Collector Current
100
1000
-IC, Collector Current(mA)
10000
Saturation Voltage vs Collector Current
10000
VCESAT @IC=1000IB
1000
-40°C
0°C
25°C
85°C
140°C
100
-VBESA T, Saturation Voltage(mV)
10000
-VCESAT, Saturation Voltage(mV)
10
100
1000
-IC, Collector Current(mA)
VBESAT @IC=250IB
1000
-40°C
0°C
25°C
85°C
140°C
100
10
BTB1580M3
100
1000
-IC, Collector Current(mA)
10000
10
100
1000
-IC , Collector Current(mA)
10000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C655M3
Issued Date : 2004.03.18
Revised Date :2014.11.06
Page No. : 5/8
Typical Characteristics(Cont.)
Built-in Diode Characteristics
On Voltage vs Collector Current
10000
10000
-40°C
0°C
25°C
85°C
140°C
1000
-VF, Forward Voltage(mV)
-VBEON, On Voltage(mV)
[email protected] =-4V
-40°C
0°C
25°C
85°C
140°C
1000
100
100
1
10
100
1000
-IC , Collector Current(mA)
1
10000
10
100
1000
-IF, Forward Current(mA)
10000
Power Derating Curves
Capacitance vs Reverse-Biased Voltage
1000
3
See Note 3 on page 2
PD, Power Dissipation(W)
Capacitance---(pF)
2.5
Cib
100
See Note 4 on page 2
2
See Note 2 on page 2
1.5
1
0.5
Cob
0
10
0.1
1
10
100
Reverse-Biased Voltage---(V)
0
25
50
75 100 125 150 175
TA, Ambient Temperature(℃)
200
Power Derating Curve
4
PD, Power Dissipation(W)
3.5
3
2.5
2
1.5
1
0.5
0
0
BTB1580M3
25
50
75 100 125 150
TC, Case Temeprature(℃)
175
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C655M3
Issued Date : 2004.03.18
Revised Date :2014.11.06
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
BTB1580M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C655M3
Issued Date : 2004.03.18
Revised Date :2014.11.06
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTB1580M3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C655M3
Issued Date : 2004.03.18
Revised Date :2014.11.06
Page No. : 8/8
SOT-89 Dimension
Marking:
month code: 1~9,
A,B,C
2
1
3
Product
Code
Year code :
6→2006,
7→2007,…
BN
A
H
C
D
B
Style: Pin 1. Base 2. Collector 3. Emitter
E
I
F
3-Lead SOT-89 Plastic
Surface Mounted Package
CYStek Package Code: M3
G
Inches
Min.
Max.
0.1732 0.1811
0.1551 0.1673
0.0610 REF
0.0906 0.1024
0.0126 0.0205
DIM
A
B
C
D
E
Millimeters
Min.
Max.
4.40
4.60
3.94
4.25
1.55 REF
2.30
2.60
0.32
0.52
DIM
F
G
H
I
Inches
Min.
Max.
0.0591 TYP
0.1181 TYP
0.0551 0.0630
0.0138 0.0173
Millimeters
Min.
Max.
1.50 TYP
3.00 TYP
1.40
1.60
0.35
0.44
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1580M3
CYStek Product Specification