IRFD110 Data Sheet July 1999 1A, 100V, 0.600 Ohm, N-Channel Power MOSFET • 1A, 100V • rDS(ON) = 0.600Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Formerly developmental type TA17441. Ordering Information IRFD110 Symbol PACKAGE HEXDIP 2314.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. PART NUMBER File Number BRAND D IRFD110 NOTE: When ordering, use the entire part number. G S Packaging HEXDIP DRAIN GATE SOURCE 4-269 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFD110 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor (See Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ , TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRFD110 100 100 1.0 8.0 ±20 1.0 0.008 19 -55 to 150 UNITS V V A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS V Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V (Figure 9) 100 - - Gate Threshold Voltage VGS(TH) VGS = VDS , ID = 250µA Zero Gate Voltage Drain Current On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time IDSS ID(ON) IGSS rDS(ON) gfs td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time 2.0 - 4.0 V VDS = Rated BVDSS , VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - 250 µA 1.0 - - A VDS > ID(ON) x rDS(ON)MAX , VGS = 10V VGS = ±20V - - ±100 nA ID = 0.8A, VGS = 10V (Figures 7, 8) - 0.5 0.6 Ω 0.8 1.2 - S - 10 20 ns - 15 25 ns - 15 25 ns - 10 20 ns - 5.0 7.0 nC - 2.0 - nC - 3.0 - nC - 135 - pF - 80 - pF - 20 - pF - 4.0 - nH - 6.0 - nH - - 120 oC/W VDS > ID(ON) x rDS(ON)MAX , ID = 0.8A (Figure 11) VDD = 0.5 x Rated BVDSS, ID ≈ 1.0A, RG = 9.1Ω, RL = 50Ω MOSFET Switching Times are Essentially Independent of Operating Temperature tf Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = 10V, ID ≈ 1.0A, VDS = 0.8 x Rated BVDSS, Ig(REF) = 1.5mA (Figure 13) Gate Charge is Essentially Independent of Operating Temperature VGS = 0V, VDS = 25V, f = 1MHz (Figure 10) Internal Drain Inductance LD Measured from the Drain Lead, 2mm (0.08in) from Package to Center of Die Internal Source Inductance LS Measured from the Source Lead, 2mm (0.08in) from Header to Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device’s Inductances D LD G LS S Thermal Resistance Junction to Ambient 4-270 RθJA Free Air Operation IRFD110 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current Pulse Source to Drain Current (Note 4) ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode MIN TYP MAX - - 1.0 UNITS A - - 8.0 A D G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time VSD trr Reverse Recovery Charge QRR TJ = 25oC, ISD = 1.0A, VGS = 0V (Figure 12) TJ = 150oC, ISD = 1.0A, dISD/dt = 100A/µs TJ = 150oC, ISD = 1.0A, dISD/dt = 100A/µs - - 2.5 V - 100 - ns - 0.2 - µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. VDD = 25V, starting TJ = 25oC, L = 28.5mH, RG = 25Ω, peak IAS = 1.0A. 4. Repetitive rating: pulse width limited by maximum junction temperature. Typical Performance Curves Unless Otherwise Specified 1.0 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0 25 125 50 75 100 TA , AMBIENT TEMPERATURE (oC) 0.2 25 125 50 75 100 TA , AMBIENT TEMPERATURE (oC) 150 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE 5 100µs 1ms 1 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 100ms ID , DRAIN CURRENT (A) 10 ID , DRAIN CURRENT (A) 0.4 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE 0.01 0.6 0 0 0.1 0.8 VGS = 10V VGS = 9V VGS = 8V 4 VGS = 7V 3 VGS = 6V 2 VGS = 5V 1 DC TJ = MAX RATED PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 4V 0 1 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 4-271 0 10 20 30 40 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. OUTPUT CHARACTERISTICS 50 IRFD110 ID , DRAIN CURRENT (A) 5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 4 Unless Otherwise Specified (Continued) ID(ON) , ON-STATE DRAIN CURRENT (A) Typical Performance Curves VGS = 9V VGS = 8V VGS = 10V VGS = 7V 3 VGS = 6V 2 1 VGS = 5V VGS = 4V 0 0 1 2 3 5 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VDS > ID(ON) x rDS(ON)MAX 4 TJ = 25oC 3 TJ = 125oC 2 1 0 4 0 5 2 VDS , DRAIN TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON RESISTANCE rDS(ON) , DRAIN TO SOURCE ON RESISTANCE (Ω) 1.0 VGS = 10V VGS = 20V 0.5 2.0 10 4 ID , DRAIN CURRENT (A) 1.0 0.5 0 -60 8 6 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 0.8A 1.5 0 NOTE: Heating effect of 2µs pulse is minimal. -40 -20 40 0 20 60 80 100 TJ , JUNCTION TEMPERATURE (oC) 120 140 FIGURE 8. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 1.25 500 ID = 250µA VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 400 1.15 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 8 2.5 1.5 2 6 FIGURE 6. TRANSFER CHARACTERISTICS 2µs PULSE TEST DUTY CYCLE = 0.5% MAX 0 4 VGS , GATE TO SOURCE VOLTAGE (V) FIGURE 5. SATURATION CHARACTERISTICS 2.0 TJ = -55oC 1.05 0.95 0.85 300 200 CISS COSS 100 CRSS 0.75 -60 -40 -20 0 20 40 60 80 100 120 140 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 4-272 0 0 10 40 30 20 VDS , DRAIN TO SOURCE VOLTAGE (V) 50 FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE IRFD110 Typical Performance Curves 10 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 3.2 ISD , SOURCE TO DRAIN CURRENT (A) gfs , TRANSCONDUCTANCE (S) 4.0 Unless Otherwise Specified (Continued) TJ = -55oC TJ = 25oC 2.4 TJ = 125oC 1.5 0.8 0 0 1 2 3 5 4 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX 5 2 TJ = 150oC 1.0 TJ = 25oC 5 2 0.1 0 0.2 ID , DRAIN CURRENT (A) FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT 0.4 1.2 0.6 0.8 1.0 1.4 1.6 VSD , SOURCE TO DRAIN VOLTAGE (V) 1.8 FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE 20 VGS , GATE TO SOURCE (V) ID = 1A VDS = 20V 15 VDS = 50V VDS = 80V 10 5 0 0 4 6 QG, GATE CHARGE (nC) 2 8 10 FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS tP IAS + RG - VGS VDS VDD VDD DUT 0V tP IAS 0 0.01Ω tAV FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT 4-273 FIGURE 15. UNCLAMPED ENERGY WAVEFORMS 2.0 IRFD110 Test Circuits and Waveforms (Continued) tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 10% 0 DUT 90% VGS VGS 0 FIGURE 17. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0.2µF 50% PULSE WIDTH 10% FIGURE 16. SWITCHING TIME TEST CIRCUIT 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 Ig(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR FIGURE 18. GATE CHARGE TEST CIRCUIT Ig(REF) 0 FIGURE 19. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. 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