Transistors 2SA2046 Silicon PNP epitaxial planer type 0.40+0.10 −0.05 1.45 0.16+0.10 −0.06 5° 0.95 0.95 1.90±0.20 Rating Unit VCBO −30 V Collector to emitter voltage VCEO −20 V Emitter to base voltage VEBO −5 V Peak collector current ICP −5 A Collector current IC −1.5 A * PC 400 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 Note) *: Measure on the ceramic substrate at 15 × 15 × 0.6 10° 1.10+0.30 −0.10 Symbol Collector to base voltage 0 ∼ 0.1 1.10+0.20 −0.10 Parameter 2.90+0.20 −0.05 0.65±0.15 2 1 ■ Absolute Maximum Ratings Ta = 25°C 0.40±0.20 1.50+0.25 −0.05 • Low collector to emitter saturation voltage VCE(sat) • Mini3-G1 type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing +0.20 2.80−0.30 3 ■ Features Collector power dissipation 0.65±0.15 Unit: mm For DC-DC converter 1: Base 2: Emitter 3: Collector EIAJ: SC-59 Mini3-G1 Type Package Marking Symbol: 3Z °C mm3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector to base voltage VCBO IC = −10 µA, IE = 0 −30 V Collector to emitter voltage VCEO IC = −1 mA, IB = 0 −20 V Emitter to base voltage VEBO Forward current transfer ratio * Collector to emitter saturation voltage * Collector output capacitance Transition frequency IE = −10 µA, , IC = 0 −5 hFE VCE = −2 V, IC = −100 mA 160 VCE(sat) IC = −500 mA, IB = −25 mA Cob fT V 560 −50 −150 mV VCB = −10 V, IE = 0, f = 1 MHz 25 35 pF VCB = −10 V, IE = 20 mA f = 200 MHz 170 MHz Note) *: Pulse measurement 1