PHILIPS BLW60C

DISCRETE SEMICONDUCTORS
DATA SHEET
BLW60C
VHF power transistor
Product specification
March 1993
Philips Semiconductors
Product specification
VHF power transistor
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
B and C operated mobile, industrial
and military transmitters with a
nominal supply voltage of 12,5 V. The
transistor is resistance stabilized and
is guaranteed to withstand severe
load mismatch conditions with a
supply over-voltage to 16,5 V.
BLW60C
Matched hFE groups are available on
request.
It has a 3/8" capstan envelope with a
ceramic cap. All leads are isolated
from the stud.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
VCC
V
f
MHz
c.w. (class-B)
12,5
175
s.s.b. (class-AB)
12,5 1,6-28
MODE OF OPERATION
PL
W
GL
dB
45
> 5,0
3-30 (P.E.P.) typ. 19,5
PIN CONFIGURATION
η
%
zi
Ω
ZL
Ω
> 75
1,2 + j1,4
2,6 − j1,2
−
typ. 35
−
−
typ. −33
d3
dB
PINNING - SOT120A.
PIN
handbook, halfpage
4
1
3
DESCRIPTION
1
collector
2
emitter
3
base
4
emitter
2
MSB056
Fig.1 Simplified outline. SOT120A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
March 1993
2
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
VCESM
max.
36 V
Collector-emitter voltage (open base)
VCEO
max.
16 V
Emitter-base voltage (open collector)
VEBO
max.
4 V
Collector current (average)
IC(AV)
max.
9 A
Collector current (peak value); f > 1 MHz
ICM
max.
22 A
R.F. power dissipation (f > 1 MHz); Tmb = 25 °C
Prf
max.
100 W
Storage temperature
Tstg
Operating junction temperature
Tj
MGP479
102
handbook, halfpage
−65 to +
150 °C
200 °C
max.
MGP480
150
handbook, halfpage
Prf
(W)
IC
(A)
100
ΙΙΙ
10
ΙΙ
Tmb = 25 °C
Th = 70 °C
derate by 0.52 W/K
50
Ι
0.38 W/K
0
1
1
10
VCE (V)
0
102
50
Th (°C)
100
I Continuous d.c. operation
II Continuous r.f. operation
III Short-time operation during mismatch
Fig.3 R.F. power dissipation; VCE ≤ 16,5 V; f > MHz.
Fig.2 D.C. SOAR.
THERMAL RESISTANCE
(dissipation = 40 W; Tmb = 88 °C, i.e. Th = 70 °C)
From junction to mounting base (d.c. dissipation)
Rth j-mb(dc)
=
2,8 K/W
From junction to mounting base (r.f. dissipation)
Rth j-mb(rf)
=
2,05 K/W
From mounting base to heatsink
Rth mb-h
=
0,45 K/W
March 1993
3
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
CHARACTERISTICS
Tj = 25 °C
Breakdown voltage
Collector-emitter voltage
VBE = 0; IC = 50 mA
V(BR)CES
>
36 V
V(BR)CEO
>
16 V
V(BR)EBO
>
4 V
ICES
<
25 mA
E
>
8 ms
E
>
8 ms
Collector-emitter voltage
open base; IC = 100 mA
Emitter-base voltage
open collector; IE = 25 mA
Collector cut-off current
VBE = 0; VCE = 15 V
Transient energy
L = 25 mH; f = 50 Hz
open base
−VBE = 1,5 V; RBE = 33 Ω
D.C. current gain
(1)
IC = 4 A; VCE = 5 V
hFE
D.C. current gain ratio of matched devices
typ
50
10 to
80
(1)
hFE1/hFE2
<
1,2
VCEsat
typ
1,5 V
IC = 4 A; VCE = 12,5 V
fT
typ
650 MHz
IC = 12,5 A; VCE = 12,5 V
fT
typ
600 MHz
IC = 4 A; VCE = 5 V
Collector-emitter saturation voltage (1)
IC = 12,5 A; IB = 2,5 A
Transition frequency at f = 100 MHz
(1)
Collector capacitance at f = 1 MHz
Cc
typ
120 pF
<
160 pF
IC = 200 mA; VCE = 15 V
Cre
typ
80 pF
Collector-stud capacitance
Ccs
typ
2 pF
IE = Ie = 0; VCB = 15 V
Feedback capacitance at f = 1 MHz
Note
1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02.
March 1993
4
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
MGP481
75
MGP482
300
typical values Tj = 25 °C
handbook, halfpage
handbook, halfpage
VCE = 12.5 V
IE = Ie = 0
f = 1 MHz
Cc
hFE
(pF)
5V
50
200
typ
100
25
0
0
0
Fig.4
5
10
IC (A)
15
0
DC current gain as a function of collector
current.
Fig.5
10
20
VCB (V)
Collector capacitance as a function of
collector-base voltage.
MGP483
750
handbook, full pagewidth
fT
(MHz)
VCE = 12.5 V
typical values
f = 100 MHz
Tj = 25 °C
10 V
500
5V
250
0
0
5
10
15
Fig.6 Transition frequency as a function of collector current.
March 1993
5
IC (A)
20
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 °C
f (MHz)
VCC (V)
PL (W)
PS (W)
Gp (dB)
IC (A)
175
12,5
45
< 14,2
>
< 4,8
175
13,5
45
−
5,0
η (%)
>
−
typ. 6,0
75
zi (Ω)
ZL (Ω)
1,2 + j1,4
2,6 − j1,2
−
−
typ. 75
Test circuit for 175 MHz
handbook, full pagewidth
C6a
C3a
C1
L1
50 Ω
L4
C7
L7
L5
50 Ω
T.U.T.
C6b
L6
C2
L2
C4
C5
R1
C8
C3b
R2
L8
L3
+VCC
MGP484
Fig.7 Class-B test circuit at f = 175 MHz.
List of components:
C1 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C2 = C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008)
C3a = C3b = 47 pF ceramic capacitor (500 V)
C4 = 120 pF ceramic capacitor
C5 = 100 nF polyester capacitor
C6a = C6b = 8,2 pF ceramic capacitor (500 V)
C7 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
L1 = 1 turn Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 × 5 mm
L2 = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 × 5 mm
L3 = L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L4 = L5 = strip (12 mm × 6 mm); taps for C3a and C3b at 5 mm from transistor
L6 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2 × 5 mm
L7 = 2 turns enamelled Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2 × 5 mm
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
R1 = 10 Ω (±10%) carbon resistor
R2 = 4,7 Ω (±5%) carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit: Fig.8.
March 1993
6
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
150
handbook, full pagewidth
72
1888MJK
L3
L8
+VCC
C4
R1
L2
C1
C2
C5
C3a
L6
L4
L1
R2
C6a
L5
C7
C8
L7
C6b
C3b
1888MJK
rivet
MGP485
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve
as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact
between upper and lower sheets.
Fig.8 Component layout and printed-circuit board for 175 MHz class-B test circuit.
March 1993
7
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
MGP486
100
handbook, halfpage
typical values
f = 175 MHz
PL
(W)
MGP487
10
handbook, halfpage
VCC = 12.5 V
VCC = 13.5 V
typical values
f = 175 MHz
Th = 25 °C
η
VCC = 12.5 V
VCC = 13.5 V
η
(%)
Gp
(dB)
75
Th = 25 °C
100
Gp
50
50
5
Th = 70 °C
25
0
0
0
0
10
20
PS (W)
30
10
Fig.9
30
PL (W)
50
Fig.10
Conditions for R.F. SOAR
f = 175 MHz
Th = 70 °C
Rth mb-h = 0,45 K/W
VCCnom = 12,5 V or 13,5 V
PS = PSnom at VCCnom and VSWR = 1
measured in circuit of Fig.7.
MGP488
50
handbook, halfpage
VSWR =
5
PLnom
(W)
VSWR = 1
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
40
10
20
50
PS
PSnom
30
1
1.1
1.2
VCC
VCCnom
The graph applies to the situation in which the drive
(PS/PSnom) increases linearly with supply over-voltage
ratio.
1.3
Fig.11
March 1993
8
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
MGP489
MGP490
2
handbook, halfpage
4
handbook, halfpage
ri
ri, xi
RL, XL
(Ω)
(Ω)
xi
0
2
−2
0
RL
XL
−4
0
100
f (MHz)
−2
200
Typical values; VCE = 12,5 V; PL = 45 W;
class-B operation; Th = 25 °C.
MGP491
20
Gp
(dB)
10
0
f (MHz)
200
Typical values; VCE = 12,5 V; PL = 45 W;
class-B operation; Th = 25 °C.
Fig.14
March 1993
f (MHz)
200
Fig.13 Load impedance (series components).
handbook, halfpage
100
100
Typical values; VCE = 12,5 V; PL = 45 W;
class-B operation; Th = 25 °C.
Fig.12 Input impedance (series components).
0
0
9
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
R.F. performance in s.s.b. class-AB operation
VCE = 12,5 V; Th up to 25 °C; Rth mb-h ≤ 0,45 K/W
f1 = 28,000 MHz; f2 = 28,001 MHz
OUTPUT POWER
W
Gp
dB
ηdt
%
d3
dB (1)
d5
dB (1)
IC(ZS)
mA
3 to 30 (P.E.P.)
typ 19,5
typ 35
typ −33
typ −36
25
Note
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
C10
handbook, full pagewidth
L4
C1
L1
RS =
RL =
50 Ω
T.U.T.
50 Ω
C11
C2
C3
L2
C4
C6
R1
C13
L3
C14
C12
C5
+VB = 12.5 V
R3
C7
R5
C8
TR2
C9
C16
R2
bias
TR1
C15
Fig.15 S.S.B. class-AB test circuit.
March 1993
+VB = 12.5 V
MGP492
R6
R4
L5
10
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
List of components:
TR1 = TR2 = BD137
C1 = 100 pF air dielectric trimmer (single insulated rotor type)
C2 = 27 pF ceramic capacitor
C3 = 180 pF ceramic capacitor
C4 = 100 pF air dielectric trimmer (single non-insulated rotor type)
C5 = C7 = 3,9 nF polyester capacitor
C6 = 2 × 270 pF polystyrene capacitors in parallel
C8 = C15 = C16 = 100 nF polyester capacitor
C9 = 2,2 µF moulded metallized polyester capacitor
C10 = 2 × 385 pF film dielectric trimmer
C11 = 68 pF ceramic capacitor
C12 = 2 x 82 pF ceramic capacitors in parallel
C13 = 47 pF ceramic capacitor
C14 = 385 pF film dielectric trimmer
L1 = 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9 mm; length 6,1 mm; leads 2 × 5 mm
L2 = L5 = Ferroxcube choke coil (cat. no. 4312 020 36640)
L3 = 68 nH; 3 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 8,3 mm; leads 2 × 5 mm
L4 = 96 nH; 3 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 7,6 mm; leads 2 × 5 mm
R1 = 27 Ω (± 5%) carbon resistor
R2 = 4,7 Ω (±5%) carbon resistor
R3 = 1,5 kΩ (±5%) carbon resistor
R4 = 10 Ω wirewound potentiometer (3 W)
R5 = 47 Ω wirewound resistor (5,5 W)
R6 = 150 Ω (±5%) carbon resistor
Measuring conditions for Figs 16 and 17:
Measuring conditions for Figs 18 and 19:
VCC = 12,5 V
VCC = 13,5 V
f1 = 28,000 MHz
f1 = 28,000 MHz
f2 = 28,001 MHz
f2 = 28,001 MHz
Th = 25 °C
Th = 25 °C
Rth mb-h ≤ 0,45 ° K/W
Rth mb-h ≤ 0,45 ° K/W
IC(ZS) = 25 mA
IC(ZS) = 25 mA
typical values
typical values
March 1993
11
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
MGP493
−20
MGP494
40
handbook, halfpage
double-tone efficiency versus
handbook, halfpage
intermodulation distortion versus
output power
output power *
d3
d3, d5
ηdt
(%)
(dB)
typ
d5
−40
−60
20
0
0
20
40
P.E.P. (W)
0
20
Fig.16
P.E.P. (W)
40
Fig.17
MGP495
−20
MGP496
40
handbook, halfpage
double-tone efficiency versus
handbook, halfpage
intermodulation distortion versus
output power
output power *
d3
d3, d5
ηdt
(%)
(dB)
typ
d5
−40
−60
20
0
0
20
P.E.P. (W)
40
0
Fig.18
20
P.E.P. (W)
40
Fig.19
* Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones.
Relative to the according peak envelope powers these figures should be increased by 6 dB.
March 1993
12
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
MGP497
30
MGP498
10
handbook, halfpage
handbook, halfpage
input impedance (series components)
versus frequency
5
Gp
(dB)
(Ω)
xi
(Ω)
7.5
2.5
20
5
ri
0
xi
2.5
ri
10
1
10
f (MHz)
0
102
1
Fig.20
Fig.21
S.S.B. class-AB operation
Conditions for Figs 20 and 21:
VCC = 12,5 V
VCC = 13,5 V
PL = 30 W (P.E.P.)
PL = 35 W (P.E.P.)
Th = 25 °C
Th = 25 °C
Rth mb-h ≤ 0,45 K/W
Rth mb-h ≤ 0,45 K/W
IC(ZS) = 25 mA
IC(ZS) = 25 mA
ZL = 1,9 Ω
ZL = 1,9 Ω
The typical curves (both conditions) hold for an unneutralized amplifier.
March 1993
10
13
f (MHz)
−2.5
−5
102
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
PACKAGE OUTLINE
Studded ceramic package; 4 leads
SOT120A
D
A
Q
c
A
D1
N1
w1 M A
D2
N
M
W
N3
M1
X
H
detail X
b
4
L
3
H
1
2
0
5
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
b
c
D
D1
D2
H
L
M
M1
N
N1
N3
Q
mm
5.97
4.74
5.90
5.48
0.18
0.14
9.73
9.47
8.39
8.12
9.66
9.39
27.44
25.78
9.00
8.00
3.41
2.92
1.66
1.39
12.83
11.17
1.60
0.00
3.31
2.54
4.35
3.98
0.065 0.505 0.063
0.055 0.440 0.000
0.130
0.100
0.171
0.157
inches 0.283
0.248
OUTLINE
VERSION
0.232 0.007
0.216 0.004
0.383 0.330 0.380 1.080
0.373 0.320 0.370 1.015
0.354 0.134
0.315 0.115
REFERENCES
IEC
JEDEC
EIAJ
w1
0.38
8-32
UNC
EUROPEAN
PROJECTION
0.015
ISSUE DATE
97-06-28
SOT120A
March 1993
W
14
Philips Semiconductors
Product specification
VHF power transistor
BLW60C
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
March 1993
15