FAIRCHILD FDMS7650DC

N-Channel Dual CoolTM PowerTrench® MOSFET
30 V, 100 A, 0.99 mΩ
Features
„ Dual Cool
TM
General Description
This N-Channel MOSFET is produced using Fairchild
process.
Semiconductor’s
advanced
PowerTrench®
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Top Side Cooling PQFN package
„ Max rDS(on) = 0.99 mΩ at VGS = 10 V, ID = 36 A
„ Max rDS(on) = 1.55 mΩ at VGS = 4.5 V, ID = 32 A
„ High performance technology for extremely low rDS(on)
„ RoHS Compliant
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Telecom Secondary Side Rectification
„ High End Server/Workstation
Pin 1
S
S
S
D
5
4
G
D
6
3
S
D
7
2
S
D
8
1
S
G
D
D
D
D
Power 56
Top
Bottom
MOSFET Maximum Ratings TA= 25 °C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
(Note 4)
Drain Current -Continuous (Package limited)
ID
TC = 25 °C
-Continuous (Silicon limited)
TC = 25 °C
-Continuous
TA = 25 °C
Ratings
30
Units
V
±20
V
100
289
(Note 1a)
-Pulsed
47
A
200
EAS
Single Pulse Avalanche Energy
(Note 3)
578
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 5)
0.5
V/ns
PD
TJ, TSTG
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
125
(Note 1a)
Operating and Storage Junction Temperature Range
3.3
-55 to +150
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
(Top Source)
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
2.3
1
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
38
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
81
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
23
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
11
°C/W
Package Marking and Ordering Information
Device Marking
7650
Device
FDMS7650DC
©2012 Fairchild Semiconductor Corporation
FDMS7650DC Rev.C3
Package
Dual CoolTM Power 56
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com
FDMS7650DC N-Channel Dual CoolTM PowerTrench® MOSFET
March 2012
FDMS7650DC
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current, Forward
VGS = 20 V, VDS = 0 V
100
nA
2.7
V
30
V
12
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-7
VGS = 10 V, ID = 36 A
0.6
0.99
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 32 A
1
1.55
VGS = 10 V, ID = 36 A, TJ = 125 °C
0.9
1.5
VDS = 5 V, ID = 36 A
225
gFS
Forward Transconductance
1.1
1.9
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
11100
14765
pF
3440
4575
pF
205
310
pF
Ω
1.3
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
29
46
28
45
ns
ns
81
130
ns
VDD = 15 V, ID = 36 A,
VGS = 10 V, RGEN = 6 Ω
20
32
ns
Total Gate Charge
VGS = 0 V to 10 V
147
206
nC
Qg
Total Gate Charge
87
Gate to Source Charge
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 36 A
62
Qgs
38
nC
Qgd
Gate to Drain “Miller” Charge
9.7
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
©2012 Fairchild Semiconductor Corporation
FDMS7650DC Rev.C3
VGS = 0 V, IS = 2.1 A
(Note 2)
0.7
1.2
VGS = 0 V, IS = 36 A
(Note 2)
0.8
1.3
75
120
ns
61
98
nC
IF = 36 A, di/dt = 100 A/μs
2
V
www.fairchildsemi.com
FDMS7650DC N-Channel Dual CoolTM PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
RθJC
Thermal Resistance, Junction to Case
(Top Source)
RθJC
Thermal Resistance, Junction to Case
(Bottom Drain)
2.3
1
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
38
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
81
RθJA
Thermal Resistance, Junction to Ambient
(Note 1c)
27
RθJA
Thermal Resistance, Junction to Ambient
(Note 1d)
34
RθJA
Thermal Resistance, Junction to Ambient
(Note 1e)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1f)
19
RθJA
Thermal Resistance, Junction to Ambient
(Note 1g)
26
RθJA
Thermal Resistance, Junction to Ambient
(Note 1h)
61
RθJA
Thermal Resistance, Junction to Ambient
(Note 1i)
16
RθJA
Thermal Resistance, Junction to Ambient
(Note 1j)
23
RθJA
Thermal Resistance, Junction to Ambient
(Note 1k)
11
RθJA
Thermal Resistance, Junction to Ambient
(Note 1l)
13
°C/W
NOTES:
1. RθJA is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. RθJC is guaranteed by design while RθCA is determined
by the user's board design.
b. 81 °C/W when mounted on
a minimum pad of 2 oz copper
a. 38 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 578 mJ is based on starting TJ = 25 oC; N-ch: L = 1 mH, IAS = 34 A, VDD = 27 V, VGS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse ocurrence only. No continuous rating is implied.
5. ISD ≤ 36 A, di/dt ≤ 100 A/μs, VDD ≤ BVDSS, Starting TJ = 25 oC.
©2012 Fairchild Semiconductor Corporation
FDMS7650DC Rev.C3
3
www.fairchildsemi.com
FDMS7650DC N-Channel Dual CoolTM PowerTrench® MOSFET
Thermal Characteristics
5
200
ID, DRAIN CURRENT (A)
VGS = 6 V
150
VGS = 4.5 V
VGS = 4 V
100
VGS = 3.5 V
50
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
0.2
0.4
0.6
0.8
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
4
VGS = 3.5 V
3
VGS = 4 V
2
1
VGS = 4.5 V
1.0
0
50
100
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On Region Characteristics
150
200
4
ID = 36 A
VGS = 10 V
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0.6
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = 10 V
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3
ID = 36 A
2
TJ = 125 oC
1
TJ = 25 oC
0
100 125 150
2
TJ, JUNCTION TEMPERATURE (oC)
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
150
VDS = 5 V
150 oC
100
TJ = 25 oC
50
TJ = -55 oC
0
1.5
2.0
2.5
3.0
3.5
6
8
10
Figure 4. On-Resistance vs Gate to
Source Voltage
200
TJ =
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
VGS = 6 V
0
200
100
VGS = 0 V
10
TJ = 150 oC
1
TJ = 25 oC
0.1
0.01
TJ = -55 oC
0.001
0.0
4.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2012 Fairchild Semiconductor Corporation
FDMS7650DC Rev.C3
4
1.2
www.fairchildsemi.com
FDMS7650DC N-Channel Dual CoolTM PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
50000
ID = 36 A
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 10 V
6
VDD = 15 V
4
VDD = 20 V
10000
Coss
1000
0
0
30
60
90
120
Crss
f = 1 MHz
VGS = 0 V
2
100
0.1
150
1
30
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
300
100
o
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT (A)
RθJC = 1.0 C/W
40
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
250
VGS = 10 V
200
VGS = 4.5 V
150
100
Limited by Package
50
1
0.01
0.1
1
10
100
1000
0
25
10000
50
150
2000
P(PK), PEAK TRANSIENT POWER (W)
100
ID, DRAIN CURRENT (A)
125
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
500
10
1 ms
0.1
100
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
1
75
o
tAV, TIME IN AVALANCHE (ms)
THIS AREA IS
LIMITED BY rDS(on)
10 ms
100 ms
1s
10 s
SINGLE PULSE
TJ = MAX RATED
RθJA = 81 oC/W
DC
TA = 25 oC
0.01
0.01
0.1
1
10
100200
VDS, DRAIN to SOURCE VOLTAGE (V)
SINGLE PULSE
RθJA = 81 oC/W
TA = 25 oC
100
10
1
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 11. Forward Bias Safe
Operating Area
©2012 Fairchild Semiconductor Corporation
FDMS7650DC Rev.C3
1000
Figure 12. Single Pulse Maximum
Power Dissipation
5
www.fairchildsemi.com
FDMS7650DC N-Channel Dual CoolTM PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 81 C/W
0.001
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Ambient Transient Thermal Response Curve
©2012 Fairchild Semiconductor Corporation
FDMS7650DC Rev.C3
6
www.fairchildsemi.com
FDMS7650DC N-Channel Dual CoolTM PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
FDMS7650DC N-Channel Dual CoolTM PowerTrench® MOSFET
Dimensional Outline and Pad Layout
©2012 Fairchild Semiconductor Corporation
FDMS7650DC Rev.C3
7
www.fairchildsemi.com
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
©2012 Fairchild Semiconductor Corporation
FDMS7650DC Rev.C3
8
www.fairchildsemi.com
FDMS7650DC N-Channel Dual CoolTM PowerTrench® MOSFET
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
2Cool™
F-PFS™
PowerTrench®
The Power Franchise®
®
PowerXS™
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FRFET®
Global Power ResourceSM
Programmable Active Droop™
AX-CAP™*
Green Bridge™
QFET®
BitSiC®
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QS™
Green FPS™
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CorePLUS™
Quiet Series™
Green FPS™ e-Series™
TinyCalc™
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Gmax™
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CROSSVOLT™
GTO™
™
TINYOPTO™
CTL™
IntelliMAX™
TinyPower™
Saving our world, 1mW/W/kW at a time™
Current Transfer Logic™
ISOPLANAR™
TinyPWM™
DEUXPEED®
Marking Small Speakers Sound Louder SignalWise™
TinyWire™
Dual Cool™
SmartMax™
and Better™
TranSiC®
EcoSPARK®
SMART START™
MegaBuck™
TriFault Detect™
EfficentMax™
Solutions for Your Success™
MICROCOUPLER™
TRUECURRENT®*
ESBC™
SPM®
MicroFET™
μSerDes™
STEALTH™
MicroPak™
®
SuperFET®
MicroPak2™
SuperSOT™-3
MillerDrive™
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SuperSOT™-6
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Ultra FRFET™
SuperSOT™-8
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FACT Quiet Series™
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VCX™
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VisualMax™
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OPTOLOGIC®
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OPTOPLANAR®
®*
FETBench™
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FPS™