IC IC SMD Type N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode KI4300DY Features TrenchFET Power MOSFET LITTLE FOOT PlusTM Integrated Schottky PWM Optimized Absolute Maximum Ratings Ta = 25 Parameter Symbol 10 secs Steady State Drain-Source Voltage (MOSFET) VDS 30 Reverse Voltage (Schottky) VDA 30 Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 ) TA = 25 (MOSFET)* ID TA = 70 Pulsed Drain Current (MOSFET) V 20 9 6.4 7 5.1 40 IDM A Continuous Source Current (MOSFET Diode Conduction)* IS 2.3 1.25 Average Foward Current (Schottky) IF 2.3 1.25 Pulsed Foward Current (Schottky) 20 IFM Maximum Power Dissipation (MOSFET)* TA = 25 2.5 1.38 TA = 70 1.6 0.88 2.2 1.25 PD Maximum Power Dissipation (Schottky)* TA = 25 1.4 TA = 70 Operating Junction and Storage Temperature Range TJ, Tstg Unit W 0.8 -55 to 150 *Surface Mounted on 1" X 1" FR4 Board. www.kexin.com.cn 1 IC IC SMD Type KI4300DY Thermal Resistance Ratings MOSFET Parameter t Maximum Junction-to-Ambient * 10 sec RthJA Steady-State Maximum Junction-to-Foot (Drain) Schottky Symbol Steady-State RthJF Unit Typ Max Typ Max 40 50 45 55 70 90 78 100 18 23 25 30 /W * Surface Mounted on 1" X 1" FR4 Board. Electrical Characteristics Ta = 25 Parameter Symbol Gate Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current On-State Drain Current* ID(on) Drain Source On State Resistance* rDS(on) VDS = VGS, ID = 250 VDS = 0 V, VGS = Min Typ Max 0.8 A 20 V 100 VDS = 24 V, VGS = 0 V 100 VDS = 24 V, VGS = 0 V, TJ = 85 2000 VDS 30 5 V, VGS = 10 V A VGS = 10 V, ID = 9 A 0.0155 0.0185 VGS = 4.5 V, ID = 7 A 0.0275 0.033 VDS = 15 V, ID = 9 A 16 Schottky Diode Forward Voltage* VSD IS = 1.0 A, VGS = 0 V 0.47 0.5 Total Gate Charge Qg 8.7 13 Gate-Source Charge Qgs Gate-Drain Charge Qgd tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr Forward Voltage Drop VF Maximum Reverse Leakage Current * Pulse test :Pulse width www.kexin.com.cn Irm CT 300 s,duty cycle 2% S V nC 2.25 4.2 Rg Turn-Off Delay Time Junction Capacitance VDS = 15 V, VGS = 5 V, ID = 9 A 0.5 td(on) Rise Time nA A gfs Turn-On Delay Time Unit V Forward Transconductanceb Gate Resistance 2 IDSS Testconditons VDD=15V,RL=15 ,ID=1A,VGEN=10V,RG=6 IF = 2.3 A, di/dt = 100 A/ s 2.7 11 16 8 15 22 30 9 15 32 60 ns ns IF = 1.0 A 0.47 0.5 V IF = 1.0 A, TJ = 125 0.36 0.42 V Vr = 24 V 0.004 0.100 Vr = 24 V, TJ = 100 0.7 10 Vr = -24 V, TJ = 125 3.0 20 Vr = 10 V 50 mA pF