HITACHI PM4575J

PM4575J
Silicon N-Channel Power MOS FET Module
Application
High Speed Power Switching
Features
•
•
•
•
•
•
•
•
Equipped with Power MOS FET
Low on-resistance
High speed switching
Low drive current
Wide area of safe operation
Inherent parallel diode between source and drain
Isolated base from Terminal
Suitable for motor driver, switching regulator and etc.
PM4575J
Outline
Equivalent Circuit
LF-J
D1
S2
G2 S2 S1
G1
D1
S1/D2
G1
S1
S1/D2
G2
S2
No
S1
D1
S2
D2
G1
S1
G2
S2
Electrode
Source 1
Drain 1
Source 2
Drain 2
Gate 1
Source 1
Gate 2
Source 2
Terminals
M5 screw
M5 screw
M5 screw
M5 screw
#110
#110
#110
#110
S2
Remarks
Power terminal
Signal terminals
Absolute Maximum Ratings (Ta = 25°C) (Per FET chip)
Item
Symbol
Rating
Unit
Drain source voltage
V(BR)DSS
450
V
Gate source voltage
V(BR)GSS
±30
V
Drain current
ID
75
A
Drain peak current
I D(peak)
180
A
Body to drain diode reverse drain current
I DR
75
A
Body to drain diode reverse peak current
I DR(peak)
180
A
1
Channel dissipation
Pch*
300
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–45 to +125
°C
2000
Vrms
Insulation dielectric
Notes: 1. Value at Ta = 25°C
2. Base to terminals AC minute
2
2
Viso*
PM4575J
Electrical Characteristics (Ta = 25°C) (Per FET chip)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V(BR)DSS
450
—
—
V
I D = 10 mA, VGS = 0 V
Gate to source leak current
I GSS
—
—
±10
µA
VGS = ± 25 V, VDS = 0 V
Gate to source breakdown
voltage
V(BR)GSS
±30
—
—
V
I G = ±100 µA, VDS = 0 V
Drain leak current
I DSS
—
—
500
µA
VDS = 360 V, VGS = 0 V
Gate to source threshold
voltage
VGS(th)
2.0
—
3.0
V
I D = 1 mA, VDS = 10 V
Drain to source saturation
voltage
VDS(on)
—
3.7
4.44
V
I D = 37 A, VGS = 10 V*1
Static drain to source on state
resistance
RDS(on)
—
0.10
0.12
Ω
I D = 37 A, VGS = 10 V*1
Forward transfer admittance
|yfs|
—
45
—
S
I D = 37 A, VDS = 10 V*1
Input capacitance
Ciss
—
9600
—
pF
VDS = 10 V, VGS = 0 V
Output capacitance
Coss
—
2300
—
Reverse transfer capacitance
Crss
—
330
—
Turn-on delay time
t d(on)
—
100
—
Rise time
tr
—
310
—
Rg = 50 Ω
Turn-off delay time
t d(off)
—
550
—
RL = 1 Ω
Fall time
tf
—
135
—
Body to drain diode forward
voltage
VDF
—
1.8
—
V
I F = 75 A, VGS = 0 V
Body to drain diode reverse
recovery time
t rr
—
130
—
ns
I F = 75 A, VGS = 0 V
di/dt = 100 A/ms
Note:
f = 1 MHz
ns
I D = 37 A, VGS = 10 V
1. Pulse Test
Mechanical Characteristics
Item
Symbol
Condition
Rating
Unit
Fixing strength
—
Mounting into main-terminal with M4 screw
1.45 to 1.95
N-m
—
Mounting into heat sink with M5 screw
1.95 to 2.9
N-m
—
Typical value
200
g
Weight
3
PM4575J
Maximum Safe Operation Area
Power vs. Temperature Derating
1000
Drain Current I D (A)
Channel Dissipation Pch (W)
300
200
100
10
1
50
100
150
0.01
0.1
100
Pulse Test
Drain Current I D (A)
80
VGS = 6 V
60
VGS = 5 V
20
VGS = 4.5 V
1
10
4
8
12
16
Drain to Source Voltage V DS (V)
4
1000
80
VDS = 10 V
Pulse Test
60
40
20
Ta = 75°C
Ta = 25°C
Ta = –25°C
VGS = 4 V
0
100
Typical Transfer Characteristics
Typical Output Characteristics
40
PM4575J
Drain to Source Voltage VDS (V)
100
VGS = 10 V
µs
PM5075J
0.1
Case Temperature T C (°C)
Drain Current I D (A)
in
on
ati ea is
r
e r y
Op is a d b )
th ite (on
lim DS
R
0µ
1
P
m s
s
DC W =
(T O 10
a p
= er ms
25 at
°C ion
)
Ta = 25°C
0
10
10
100
20
0
2
4
6
8
Gate to Source Voltage V GS (V)
10
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
10
Pulse Test
8
ID = 75 A
6
ID = 37 A
4
ID = 20 A
2
0
2
4
6
8
10
Gate to Source Voltage VGS (V)
Static Drain to Source Resistance RDS (on) (Ω )
Drain to Source Saturation Voltage VDS (V)
PM4575J
Static Drain to Source on State
Resistance vs. Drain Current
1.0
Pulse Test
0.3
V GS = 10, 15 V
0.1
0.03
0.01
1
100
100
VGS = 10 V
Pulse Test
0.3
I D = 37 A
I D = 75 A
0.2
I D = 20 A
0.1
0
40
80
120
Case Temperature Tc (°C)
Forward Admittance | yfs | (S)
Static Drain to Source on
State Resistance RDS (on) ( Ω)
30
Forward Transfer Admittance
vs. Drain Current
0.5
0
–40
10
Drain Current ID (A)
Static Drain to Source on State
Resistance vs. Temperature
0.4
3
Ta = –25°C
VDS = 10 V
Pulse Test
25°C
10
75°C
1
0.1
0.1
1
10
Drain Current I D (A)
100
5
PM4575J
Body to Drain Diode Reverse
Recovery Time
Typical Capacitance
vs. Drain to Source Voltage
100000
300
di/dt = 100A/ µs, VGS = 0 V
Pulse Test
100
30
10
0.1
Ciss
10000
Capacitance C (pF)
Reverse Recovery Time t rr (ns)
1000
Coss
1000
Crss
100
VGS = 0 V
f = 1 MHz
10
1
10
0
100
VDS
300
16
12
VDD = 300 V
200 V
100 V
200
100
VGS
40
80
8
I D = 37 A
Pulse Test
120
160
4
200
t d (off)
1000
Switching Time t (ns)
VDD = 300 V
200 V
100 V
400
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS (V)
30
20
Gate Charge Qg (nc)
6
20
Switching Characteristics
Dynamic Input Characteristics
500
0
10
Drain to Source Voltage VDS (V)
Reverse Drain Current IDR (A)
tr
tf
100
t d (on)
VGS = 10 V
duty < 1%
10
0.1
1
10
Drain Current ID (A)
100
PM4575J
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
100
Pulse Test
80
60
VGS = 0, –5 V
40
20
VGS = 10 V
0
0.4
0.8
1.2
1.6
2.0
Normalized Transient Thermal Impedance γ (t)
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
1
D=1
0.5
0.2
0.1
0.01
0.1
0.05
0.02
θ ch – C (t) = γ (t) · θ ch – C
θ ch – C = 0.385°C/W, TC = 25°C
PDM
0.01
e
uls
p
ot
h
1s
PW
T
0.001
100 µ
1m
10 m
100 m
1
D=
PW
T
10
Pulse Width PW (s)
7
PM4575J
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T
RL
P.G.
Vin
10 V
50 Ω
VDD .=. 30 V
Waveforms
90 %
10 %
Vin
Vout
90 %
90 %
10 %
t f (on)
8
tr
10 %
t d (off)
tf
PM4575J
Package Dimensions
Unit: mm
80 ± 0.6
(23)
(23)
3-M5 Screw
(24)
G2
S2
JAPAN
S1 D2
S2
D1
S1
G1
(19)
(27)
35 Max
2- φ 5.5 ± 0.3
(12)
95 Max
(19) (7) (16) (7)
(19)
(2.8)
31 Max
(7)
9
PM4575J
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or
part of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or
any other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third
party or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products
are requested to notify the relevant Hitachi sales offices when planning to use the products in
MEDICAL APPLICATIONS.
Hitachi, Ltd.
Semiconductor & IC Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan
Tel: Tokyo (03) 3270-2111
Fax: (03) 3270-5109
For further information write to:
Hitachi America, Ltd.
Semiconductor & IC Div.
2000 Sierra Point Parkway
Brisbane, CA. 94005-1835
USA
Tel: 415-589-8300
Fax: 415-583-4207
10
Hitachi Europe GmbH
Electronic Components Group
Continental Europe
Dornacher Straße 3
D-85622 Feldkirchen
München
Tel: 089-9 91 80-0
Fax: 089-9 29 30 00
Hitachi Europe Ltd.
Electronic Components Div.
Northern Europe Headquarters
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA
United Kingdom
Tel: 0628-585000
Fax: 0628-778322
Hitachi Asia Pte. Ltd.
16 Collyer Quay #20-00
Hitachi Tower
Singapore 0104
Tel: 535-2100
Fax: 535-1533
Hitachi Asia (Hong Kong) Ltd.
Unit 706, North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon
Hong Kong
Tel: 27359218
Fax: 27306071