HUF76105SK8 Data Sheet May 1999 5.5A, 30V, 0.050 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 5.5A, 30V • Ultra Low On-Resistance, rDS(ON) = 0.050Ω • Simulation Models - Temperature Compensated PSPICE® and SABER Electrical Models - SPICE and SABER Thermal Impedance Models Available on the WEB at: www.semi.Intersil.com/families/models.htm • Peak Current vs Pulse Width Curve • UIS Rating Curve • Transient Thermal Impedance Curve vs Board Mounting Area Formerly developmental type TA76105. • Related Literature - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER PACKAGE MS-012AA 4719.1 Features This N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and batteryoperated products. HUF76105SK8 File Number BRAND 76105SK8 Symbol NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUF76105SK8T. NC(1) DRAIN(8) SOURCE(2) DRAIN(7) SOURCE(3) DRAIN(6) GATE(4) DRAIN(5) Packaging JEDEC MS-012AA BRANDING DASH 5 1 2 3 8-1 4 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. UltraFET™ is a trademark of Intersil Corporation. PSPICE® is a registered trademark of MicroSim Corporation. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 HUF76105SK8 Absolute Maximum Ratings TA = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current Continuous (TA= 25oC, VGS = 10V) (Figure 2) (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA= 100oC, VGS = 5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Continuous (TA= 100oC, VGS = 4.5V) (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg UNITS V V V 30 30 ±16 5.5 1.4 1.3 Figure 4 Figures 6, 17, 18 2.5 20 -55 to 150 A A A W mW/oC oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. TJ = 25oC to 125oC. 2. 50oC/W measured using FR-4 board at 1 second. 3. 212oC/W measured using FR-4 board with 0.0115 in2 copper pad at 1000 seconds. Electrical Specifications TA = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS 30 - - V VDS = 25V, VGS = 0V - - 1 µA VDS = 25V, VGS = 0V, TC = 150oC - - 250 µA VGS = ±16V - - ±100 nA OFF STATE SPECIFICATIONS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current BVDSS IDSS IGSS ID = 250µA, VGS = 0V (Figure 12) ON STATE SPECIFICATIONS Gate to Source Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA (Figure 11) 1 - 3 V Drain to Source On Resistance rDS(ON) ID = 5.5A, VGS = 10V (Figures 9, 10) - 0.040 0.050 Ω ID = 1.4A, VGS = 5V (Figure 9) - 0.055 0.072 Ω ID = 1.3A, VGS = 4.5V (Figure 9) - 0.060 0.078 Ω Pad Area = 0.76 in2 (Note 2) - - 50 oC/W Pad Area = 0.054 in2 (Figure 23) - - 175 oC/W Pad Area = 0.0115 in2 (Figure 23) - - 212 oC/W VDD = 15V, ID ≅ 1.3A, RL = 11.5Ω, VGS = 4.5V, RGS = 27Ω (Figures 15, 21, 22) - - 60 ns - 12 - ns tr - 28 - ns td(OFF) - 31 - ns tf - 21 - ns tOFF - - 80 ns THERMAL SPECIFICATIONS Thermal Resistance Junction to Ambient RθJA SWITCHING SPECIFICATIONS (VGS = 4.5V) Turn-On Time tON Turn-On Delay Time td(ON) Rise Time Turn-Off Delay Time Fall Time Turn-Off Time 8-2 HUF76105SK8 Electrical Specifications TA = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS - - 60 ns - 17 - ns - 21 - ns td(OFF) - 60 - ns tf - 20 - ns tOFF - - 120 ns - 9 11 nC - 5.3 6.4 nC - 0.35 0.45 nC SWITCHING SPECIFICATIONS (VGS = 10V) Turn-On Time tON Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time Fall Time Turn-Off Time VDD = 15V, ID ≅ 5.5A, RL = 2.7Ω, VGS = 10V, RGS = 27Ω (Figures 16, 21, 22) GATE CHARGE SPECIFICATIONS Total Gate Charge Qg(TOT) VGS = 0V to 10V Gate Charge at 5V Qg(5) VGS = 0V to 5V Qg(TH) VGS = 0V to 1V Threshold Gate Charge VDD = 15V, ID ≅ 1.4A, RL = 10.7Ω Ig(REF) = 1.0mA (Figures 14, 19, 20) Gate to Source Gate Charge Qgs - 0.8 - nC Reverse Transfer Capacitance Qgd - 2.5 - nC - 325 - pF - 180 - pF - 35 - pF MIN TYP MAX UNITS - - 1.25 V 1.00 V CAPACITANCE SPECIFICATIONS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VDS = 25V, VGS = 0V, f = 1MHz (Figure 13) Source to Drain Diode Specifications PARAMETER SYMBOL Source to Drain Diode Voltage VSD TEST CONDITIONS ISD = 5.5A ISD = 1.4A Reverse Recovery Time Reverse Recovered Charge trr ISD = 1.4A, dISD/dt = 100A/µs - - 39 ns QRR ISD = 1.4A, dISD/dt = 100A/µs - - 42 nC 1.2 6 1.0 5 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER Typical Performance Curves 0.8 0.6 0.4 VGS = 10V, RθJA = 50oC/W 4 3 2 VGS = 4.5V, RθJA = 212oC/W 1 0.2 0 0 0 25 50 75 100 125 150 TA , AMBIENT TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE 8-3 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (oC) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE HUF76105SK8 Typical Performance Curves ZθJA, NORMALIZED THERMAL IMPEDANCE 10 1 (Continued) DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 RθJA = 50oC/W PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 SINGLE PULSE 0.001 10-5 10-4 10-3 10-2 10-1 100 101 102 103 t, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE IDM, PEAK CURRENT (A) 500 RθJA = 50oC/W TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: 100 VGS = 10V 150 - TA I = I25 VGS = 5V 125 10 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 1 10-5 10-4 10-3 10-2 10-1 100 101 102 103 t, PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY TJ = MAX RATED TA = 25oC ID, DRAIN CURRENT (A) 100 100µs 10 1ms OPERATION IN THIS AREA MAY BE LIMITED BY rds(ON) 1 10ms BVDSS MAX = 30V 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 STARTING TJ = 25oC 10 STARTING TJ = 150oC 1 0.1 1 IAS, AVALANCHE CURRENT (A) 20 200 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R ≠ 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 0.01 0.1 1 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Intersil Application Notes AN9321 and AN9322. FIGURE 5. FORWARD BIAS SAFE OPERATING AREA 8-4 FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY 10 HUF76105SK8 Typical Performance Curves 25 250µs PULSE TEST DUTY CYCLE = 0.5% MAX VDD = 15V 20 VGS = 10V 25oC -55oC VGS = 5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 (Continued) 150oC 15 10 5 20 VGS = 4V 15 10 VGS = 3V 5 TA = 25oC 0 0 0 1 2 3 4 VGS, GATE TO SOURCE VOLTAGE (V) 0 5 FIGURE 7. TRANSFER CHARACTERISTICS 250µs PULSE TEST DUTY CYCLE = 0.5% MAX rDS(ON), DRAIN TO SOURCE ON RESISTANCE (mΩ) ID = 5.5A 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V) 5 FIGURE 8. SATURATION CHARACTERISTICS 90 70 ID = 1.4A 50 1.8 NORMALIZED DRAIN TO SOURCE ON RESISTANCE 110 30 VGS = 10V, ID = 5.5A 250µs PULSE TEST DUTY CYCLE = 0.5% MAX 1.6 1.4 1.2 1.0 0.8 0.6 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 FIGURE 10. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1.15 VGS = VDS, ID = 250µA 1.1 1.0 0.9 0.8 0.7 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.2 NORMALIZED GATE THRESHOLD VOLTAGE VGS = TEST 3.5V 250µs PULSE DUTY CYCLE = 0.5% MAX ID = 250µA 1.1 1.05 1.0 0.95 0.9 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) FIGURE 11. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE 8-5 -80 -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 12. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE HUF76105SK8 Typical Performance Curves (Continued) 10 VGS , GATE TO SOURCE VOLTAGE (V) 600 VGS = 0V, f = 1MHz C, CAPACITANCE (pF) 500 400 CISS 300 200 COSS 100 CRSS VDD = 15V 8 6 4 WAVEFORMS IN DESCENDING ORDER: ID = 5.5A ID = 1.4A 2 0 0 0 0 5 10 15 20 25 30 VDS , DRAIN TO SOURCE VOLTAGE (V) 2 4 6 Qg, GATE CHARGE (nC) 8 NOTE: Refer to Intersil Application Notes AN7254 and AN7260. FIGURE 13. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE FIGURE 14. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT 60 120 VGS = 10V, VDD = 15V, ID = 5.5A, RL= 2.7Ω VGS = 4.5V, VDD = 15V, ID = 1.3A, RL= 11.5Ω td(OFF) SWITCHING TIME (ns) td(OFF) SWITCHING TIME (ns) 10 45 tr 30 tf 15 90 60 tr 30 td(ON) td(ON) tf 0 0 0 10 20 30 40 RGS, GATE TO SOURCE RESISTANCE (Ω) 0 50 FIGURE 15. SWITCHING TIME vs GATE RESISTANCE 10 20 30 40 RGS, GATE TO SOURCE RESISTANCE (Ω) 50 FIGURE 16. SWITCHING TIME vs GATE RESISTANCE Test Circuits and Waveforms VDS BVDSS L VARY tP TO OBTAIN REQUIRED PEAK IAS tP + RG VDS IAS VDD VDD - VGS DUT 0V tP IAS 0 0.01Ω tAV FIGURE 17. UNCLAMPED ENERGY TEST CIRCUIT 8-6 FIGURE 18. UNCLAMPED ENERGY WAVEFORMS HUF76105SK8 Test Circuits and Waveforms (Continued) VDS VDD RL Qg(TOT) VDS VGS = 10V VGS Qg(5) + VDD VGS = 5V VGS - VGS = 1V DUT 0 Ig(REF) Qg(TH) Qgs Qgd Ig(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS VDS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + VGS VDD 10% 10% 0 DUT 90% RGS VGS VGS 0 FIGURE 21. SWITCHING TIME TEST CIRCUIT 10% 50% 50% PULSE WIDTH FIGURE 22. SWITCHING TIME WAVEFORM Thermal Resistance vs. Mounting Pad Area The maximum rated junction temperature, TJM, and the thermal resistance of the heat dissipating path determines the maximum allowable device power dissipation, PDM, in an application. Therefore the application’s ambient temperature, TA(oC), and thermal resistance RθJA (oC/W) must be reviewed to ensure that TJM is never exceeded. Equation 1 mathematically represents the relationship and serves as the basis for establishing the rating of the part. ( T JM – T A ) P DM = ------------------------------Z θJA (EQ. 1) ratings. Precise determination of PDM is complex and influenced by many factors: 1. Mounting pad area onto which the device is attached and whether there is copper on one side or both sides of the board. 2. The number of copper layers and the thickness of the board. 3. The use of external heat sinks. 4. The use of thermal vias. 5. Air flow and board orientation. In using surface mount devices such as the SOP-8 package, the environment in which it is applied will have a significant influence on the part’s current and maximum power dissipation 8-7 6. For non steady state applications, the pulse width, the duty cycle and the transient thermal response of the part, the board and the environment they are in. HUF76105SK8 Displayed on the curve are RθJA values listed in the Electrical Specifications table. The points were chosen to depict the compromise between the copper board area, the thermal resistance and ultimately the power dissipation, PDM. Thermal resistances corresponding to other copper areas can be obtained from Figure 23 or by calculation using Equation 2. RθJA is defined as the natural log of the area times a coefficient added to a constant. The area, in square inches is the top copper area including the gate and source pads. R θJA = 103.2 – 24.3 × ln ( Area ) ZθJA, THERMAL IMPEDANCE (oC/W) 120 Copper pad area has no perceivable effect on transient thermal impedance for pulse widths less than 100ms. For pulse widths less than 100ms the transient thermal impedance is determined by the die and package. Therefore, CTHERM1 through CTHERM5 and RTHERM1 through RTHERM5 remain constant for each of the thermal models. A listing of the model component values is available in Table 1. 300 250 212 oC/W - 0.0115in2 200 175 oC/W - 0.054in2 150 100 50 RθJA = 103.2 - 24.3 * ln(AREA) (EQ. 2) 0 The transient thermal impedance (ZθJA) is also effected by varied top copper board area. Figure 24 shows the effect of copper pad area on single pulse transient thermal impedance. Each trace represents a copper pad area in square inches corre- 160 sponding to the descending list in the graph. SPICE and SABER thermal models are provided for each of the listed pad areas. RθJA (oC/W) Intersil provides thermal information to assist the designer’s preliminary application evaluation. Figure 23 defines the RθJA for the device as a function of the top copper (component side) area. This is for a horizontally positioned FR-4 board with 1oz copper after 1000 seconds of steady state power with no air flow. This graph provides the necessary information for calculation of the steady state junction temperature or power dissipation. Pulse applications can be evaluated using the Intersil device Spice thermal model or manually utilizing the normalized maximum transient thermal impedance curve. 0.001 0.01 0.1 1 AREA, TOP COPPER AREA (in2) FIGURE 23. THERMAL RESISTANCE vs MOUNTING PAD AREA COPPER BOARD AREA - DESCENDING ORDER 0.020 in2 0.140 in2 0.257 in2 0.380 in2 0.493 in2 80 40 0 10-1 100 101 t, RECTANGULAR PULSE DURATION (s) FIGURE 24. THERMAL IMPEDANCE vs MOUNTING PAD AREA 8-8 102 103 HUF76105SK8 PSPICE Electrical Model .SUBCKT HUF76105 2 1 3 ; REV June 1998 CA 12 8 4.95e-10 CB 15 14 5.15e-10 CIN 6 8 2.9e-10 LDRAIN DPLCAP DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DPLCAP 10 5 DPLCAPMOD DRAIN 2 5 10 RLDRAIN RSLC1 51 + RSLC2 EBREAK 11 7 17 18 33.87 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 DBREAK 5 51 ESLC 11 - RDRAIN 6 8 ESG EVTHRES + 19 8 + LGATE IT 8 17 1 GATE 1 LDRAIN 2 5 1e-9 LGATE 1 9 9.2e-10 LSOURCE 3 7 3.2e-10 + 17 EBREAK 18 50 EVTEMP RGATE + 18 22 9 20 21 DBODY - 16 MWEAK 6 MMED MSTRO RLGATE LSOURCE CIN 8 MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD SOURCE 3 7 RSOURCE RLSOURCE S1A RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 9e-3 RGATE 9 20 3.39 RLDRAIN 2 5 10 RLGATE 1 9 9.2 RLSOURCE 3 7 3.2 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 22e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 12 S2A 13 8 14 13 S1B 17 18 RVTEMP S2B 13 CA RBREAK 15 CB 6 8 - - IT 14 + + EGS 19 VBAT 5 8 EDS - + 8 22 RVTHRES S1A S1B S2A S2B 6 12 13 8 S1AMOD 13 12 13 8 S1BMOD 6 15 14 13 S2AMOD 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*42),6))} .MODEL DBODYMOD D (IS = 3.01e-13 IKF = 20 RS = 1.47e-2 TRS1 = -1.7e-3 TRS2 = 4e-5 CJO = 5.74e-10 TT = 2.88e-8 M = 0.43) .MODEL DBREAKMOD D (RS = 3.94e-1 TRS1 = 9.94e-4 TRS2 = 9.12e-7) .MODEL DPLCAPMOD D (CJO = 2.55e-10 IS = 1e-30 N = 10 M = 0.6) .MODEL MMEDMOD NMOS (VTO = 1.92 KP = 2.1 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 3.39) .MODEL MSTROMOD NMOS (VTO = 2.26 KP = 19 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 1.7 KP = 0.1 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 33.9 RS = 0.1) .MODEL RBREAKMOD RES (TC1 = 9.94e-4 TC2 = 9.84e-8) .MODEL RDRAINMOD RES (TC1 = 8e-3 TC2 = 5.3e-5) .MODEL RSLCMOD RES (TC1 = 1.0e-3 TC2 = 1e-6) .MODEL RSOURCEMOD RES (TC1 = 1e-3 TC2 = 0) .MODEL RVTHRESMOD RES (TC1 = -1.87e-3 TC2 = -1.2e-6) .MODEL RVTEMPMOD RES (TC1 = -1.5e-3 TC2 = 1.7e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 .MODEL S1BMOD VSWITCH (RON = 1e-5 .MODEL S2AMOD VSWITCH (RON = 1e-5 .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 ROFF = 0.1 ROFF = 0.1 ROFF = 0.1 VON = -6.2 VOFF= -2) VON = -2 VOFF= -6.2) VON = -0.5 VOFF= 0.5) VON = 0.5 VOFF= -0.5) .ENDS NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank Wheatley. 8-9 HUF76105SK8 SABER Electrical Model REV July 1998 template huf76105 n2,n1,n3 electrical n2,n1,n3 { var i iscl d..model dbodymod = (is = 3.01e-13, cjo = 5.74e-10, tt = 2.88e-8, xti = 4.5, m = 0.43) d..model dbreakmod = () d..model dplcapmod = (cjo = 2.55e-10, is = 1e-30, n = 10, m = 0.6) m..model mmedmod = (type=_n, vto = 1.92, kp = 2.1, is = 1e-30, tox = 1) DPLCAP m..model mstrongmod = (type=_n, vto = 2.26, kp = 19, is = 1e-30, tox = 1) m..model mweakmod = (type=_n, vto = 1.7, kp = 0.1, is = 1e-30, tox = 1) 10 sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6.2, voff = -2) sw_vcsp..model s1bmod = (ron =1e-5, roff = 0.1, von = -2, voff = -6.2) sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.5, voff = 0.5) RSLC2 sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.5, voff = -0.5) c.ca n12 n8 = 4.95e-10 c.cb n15 n14 = 5.15e-10 c.cin n6 n8 = 2.9e-10 LDRAIN RSLC1 51 d.dbody n7 n71 = model=dbodymod d.dbreak n72 n11 = model=dbreakmod d.dplcap n10 n5 = model=dplcapmod i.it n8 n17 = 1 GATE 1 72 EVTHRES + 19 8 EVTEMP RGATE + 18 22 9 20 21 MWEAK MSTRO CIN DBODY EBREAK + 17 18 MMED RLGATE 71 11 16 6 l.ldrain n2 n5 = 1e-9 l.lgate n1 n9 = 9.2e-10 l.lsource n3 n7 = 3.2e-10 RDBODY DBREAK 50 RDRAIN 6 8 + LGATE RLDRAIN RDBREAK ISCL ESG DRAIN 2 5 - 8 LSOURCE 7 RSOURCE RLSOURCE m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u res.rbreak n17 n18 = 1, tc1 = 9.94e-4, tc2 = 9.84e-8 res.rdbody n71 n5 = 1.47e-2, tc1 = -1.7e-3, tc2 = 4e-5 res.rdbreak n72 n5 = 3.94e-1, tc1 = 9.94e-4, tc2 = 9.12e-7 res.rdrain n50 n16 = 9e-3, tc1 = 8e-3, tc2 = 5.3e-5 res.rgate n9 n20 = 3.39 res.rldrain n2 n5 = 10 res.rlgate n1 n9 = 9.2 res.rlsource n3 n7 = 3.2 res.rslc1 n5 n51 = 1e-6, tc1 = 1e-3, tc2 = 1e-6 res.rslc2 n5 n50 = 1e3 res.rsource n8 n7 = 22e-3, tc1 = 1e-3, tc2 = 0 res.rvtemp n18 n19 = 1, tc1 = -1.5e-3, tc2 = 1.7e-6 res.rvthres n22 n8 = 1, tc1 = -1.87e-3, tc2 = -1.2e-6 S1A 12 S2A 13 8 S1B CA 17 18 RVTEMP S2B 13 CB 6 8 EGS - sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod v.vbat n22 n19 = dc=1 equations { i (n51->n50) +=iscl iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/42))** 6)) } } 19 - IT 14 + + spe.ebreak n11 n7 n17 n18 = 33.87 spe.eds n14 n8 n5 n8 = 1 spe.egs n13 n8 n6 n8 = 1 spe.esg n6 n10 n6 n8 = 1 spe.evtemp n20 n6 n18 n22 = 1 spe.evthres n6 n21 n19 n8 = 1 8-10 RBREAK 15 14 13 VBAT 5 8 EDS - + 8 22 RVTHRES SOURCE 3 HUF76105SK8 SPICE Thermal Model REV June 1998 HUF76105SK8 Copper Area = 0.02 in2 CTHERM1 th 8 8.5e-4 CTHERM2 8 7 1.8e-3 CTHERM3 7 6 5.0e-3 CTHERM4 6 5 1.3e-2 CTHERM5 5 4 4.0e-2 CTHERM6 4 3 9.0e-2 CTHERM7 3 2 4.0e-1 CTHERM8 2 tl 1.4 th JUNCTION CTHERM1 RTHERM1 8 CTHERM2 RTHERM2 RTHERM1 th 8 3.5e-2 RTHERM2 8 7 6.0e-1 RTHERM3 7 6 2 RTHERM4 6 5 8 RTHERM5 5 4 18 RTHERM6 4 3 39 RTHERM7 3 2 42 RTHERM8 2 tl 48 7 CTHERM3 RTHERM3 6 RTHERM4 SABER Thermal Model CTHERM4 5 Copper Area = 0.02 in2 template thermal_model th tl thermal_c th, tl { ctherm.ctherm1 th 8 = 8.5e-4 ctherm.ctherm2 8 7 = 1.8e-3 ctherm.ctherm3 7 6 = 5.0e-3 ctherm.ctherm4 6 5 = 1.3e-2 ctherm.ctherm5 5 4 = 4.0e-2 ctherm.ctherm6 4 3 = 9.0e-2 ctherm.ctherm7 3 2 = 4.0e-1 ctherm.ctherm8 2 tl = 1.4 CTHERM5 RTHERM5 4 RTHERM6 CTHERM6 3 RTHERM7 rtherm.rtherm1 th 8 = 3.5e-2 rtherm.rtherm2 8 7 = 6.0e-1 rtherm.rtherm3 7 6 = 2 rtherm.rtherm4 6 5 = 8 rtherm.rtherm5 5 4 = 18 rtherm.rtherm6 4 3 = 39 rtherm.rtherm7 3 2 = 42 rtherm.rtherm8 2 tl = 48 } CTHERM7 2 RTHERM8 CTHERM8 tl CASE TABLE 1. Thermal Models 0.02 in2 0.14 in2 0.257 in2 0.38 in2 0.493 in2 CTHERM6 9.0e-2 1.3e-1 1.5e-1 1.5e-1 1.5e-1 CTHERM7 4.0e-1 6.0e-1 4.5e-1 6.5e-1 7.5e-1 CTHERM8 1.4 2.5 2.2 3 3 RTHERM6 39 26 20 20 20 RTHERM7 42 32 31 29 23 RTHERM8 48 35 38 31 25 COMPONANT 8-11 HUF76105SK8 All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. 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