ETC 2SJ234(L)

2SJ234(L), 2SJ234(S)
Silicon P-Channel MOS FET
November 1996
Application
High speed power switching
Features
•
•
•
•
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
 Can be driven from 5 V source
• Suitable for DC-DC converter, motor drive, power switch, solenoid drive
Outline
DPAK-1
4
4
1
1
2
3
2 3
D
1. Gate
2. Drain
3. Source
4. Drain
G
S
2SJ234(L), 2SJ234(S)
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
–30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
–2.5
A
–10
A
–2.5
A
10
W
Drain peak current
ID(pulse)*
Body to drain diode reverse drain current
IDR
1
2
Channel dissipation
Pch*
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at TC = 25°C
Electrical Characteristics (Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol Min
V(BR)DSS
–30
Typ
—
Max
—
Unit
V
Test conditions
ID = –10 mA, VGS = 0
V(BR)GSS
±20
—
—
V
IG = ±100 µA, VDS = 0
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
—
–1.0
—
—
—
0.3
–100
–2.0
0.4
µA
V
Ω
VDS = –25 V, VGS = 0
ID = –1 mA, VDS = –10 V
1
ID = –1.5 A, VGS = –10 V*
0.5
1.8
0.7
—
S
ID = –1.5 A, VGS = –4 V*
1
ID = –1.5 A, VDS = –10 V*
Zero gate voltage drain current IDSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state RDS(on)
resistance
1
Forward transfer admittance
|yfs|
—
1.0
Input capacitance
Ciss
—
245
—
pF
Output capacitance
Coss
—
170
—
pF
Reverse transfer capacitance
Turn-on delay time
Crss
td(on)
—
—
60
7
—
—
pF
ns
Rise time
Turn-off delay time
tr
td(off)
—
—
25
85
—
—
ns
ns
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note 1. Pulse test
tf
VDF
—
—
72
–1.1
—
—
ns
V
trr
—
80
—
ns
2
VDS = –10 V, VGS = 0,
f = 1 MHz
ID = –1.5 A, VGS = –10 V,
RL = 20 Ω
IF = –2.5 A, VGS = 0
IF = –2.5 A, VGS = 0,
diF/dt = 50 A/µs
2SJ234(L), 2SJ234(S)
Power vs. Temperature Derating
Channel Dissipation
Pch (W)
20
15
10
5
50
100
150
200
Case Temperature Tc (°C)
0
Maximum Safe Operating Area
– 50
– 30
10
ea
ar n)
is (o
PW
th S
in D
n R
io by
at ed
r
t
pe i
O lim
is
–3
–1
µs
10
0
=
1
10
s
m
s
– 0.3
µs
m
n
tio )
ra 5°C
pe 2
O =
C c
D (T
Drain Current I D (A)
– 10
(1
sh
ot
)
Ta = 25°C
– 0.1
– 0.05
– 0.1
– 0.3
–1
–3
– 10
– 30
– 100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
–5
– 10 V
–8V
Pulse Test
–6V
–4V
Drain Current I D (A)
–4
–3
– 3.5 V
–2
–3V
–1
V GS = – 2.5 V
0
–2
–4
–6
–8
– 10
Drain to Source Voltage V DS (V)
3
2SJ234(L), 2SJ234(S)
Typical Transfer Characteristics
– 10
V DS = –10 V
Pulse Test
Drain Current I D (A)
–8
– 25°C
–6
Tc = 25°C
75°C
–4
–2
0
–2
–4
–6
–8
– 10
Gate to Source Voltage V GS (V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
– 2.0
Drain to Source Saturation Voltage
V DS (on) (V)
Pulse Test
– 1.6
– 1.2
–3A
– 0.8
–2A
I D = –1 A
– 0.4
0
–2
–8
–6
–4
– 10
Gate to Source Voltage V GS (V)
Static Drain to Source on State
Resistance vs. Drain Current
Static Drain–Source on State
Resistance R DS (on) ( Ω )
5
2
Pulse Test
1
0.5
V GS = – 4 V
–10 V
0.2
0.1
0.05
– 0.2
– 0.5
–1
–2
–5
Drain Current I D (A)
4
–10
– 20
2SJ234(L), 2SJ234(S)
Static Drain to Source on State
Resistance vs. Temperature
2.0
Pulse Test
Static Drain–Source on State
Resistance R DS (on) ( Ω )
1.6
ID =–3A
1.2
V GS = – 4 V
–2A
–1 A
0.8
–3A
0.4
–1,– 2 A
V GS = –10 V
0
– 40
0
40
80
120
160
Case Temperature Tc (°C)
Forward Transfer Admittance
vs. Drain Current
Forward Transfer Admittance
|y fs| (S)
5
2
– 25°C
1
Tc = 25°C
75°C
0.5
V DS = –10 V
Pulse Test
0.2
0.1
0.05
– 0.2
– 0.5
–1
–2
–5
–10
– 20
Drain Current I D (A)
Body to Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
1000
300
di / dt = 50 A / µ s, Ta = 25°C
VGS = 0
100
30
10
3
1
– 0.01 – 0.03
– 0.1
– 0.3
–1
–3
–10
Reverse Drain Current I DR (A)
5
2SJ234(L), 2SJ234(S)
Typical Capacitance
vs. Drain to Source Voltage
10000
Capacitance C (pF)
V GS = 0
f = 1 MHz
1000
Ciss
Coss
100
Crss
10
–10
0
– 20
– 30
– 40
– 50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
0
0
V DD = –10 V
Drain to Source Voltage VDS (V)
–4
– 20
–8
V DD = – 25 V
V DS
– 30
–12
–10 V
V GS
–16
– 40
– 50
0
4
12
8
– 20
20
16
Gate Charge Q g (nc)
Switching Characteristics
1000
.
V GS = –10 V,VDD =. – 30 V
PW = 2 µs, duty 1 %
Switching Time t (ns)
300
td (off)
100
tf
30
tr
td (on)
10
3
1
– 0.01 – 0.03
– 0.1
– 0.3
–1
Drain Current I D (A)
6
–3
–10
Gate to Source Voltage VGS (V)
ID = – 3 A
– 25 V
–10
2SJ234(L), 2SJ234(S)
Reverse Drain Current
vs. Source to Drain Voltage
–10
Reverse Drain Current I DR (A)
Pulse Test
–8
–6
V GS = –15 V
–4
–10 V
–5V
–2
0, 5 V
0
0
– 0.8
– 0.4
–1.6
–1.2
– 2.0
Source to Drain Voltage V SD (V)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1.0
Tc = 25°C
D=1
0.5
0.3
0.2
0.1
0.05
0.1
0.03
θ ch – c(t) = γ s(t) . θ ch – c
θ ch – c = 12.5°C / W. Tc = 25°C
PW
D= T
P DM
e
uls
0.02
P
hot
0.01
1s
T
0.01
10 µ
100 µ
100 m
10 m
1m
PW
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
Vout Monitor
D.U.T
RL
Vin
–10 V
50 Ω
.
V DD =. –30 V
Waveforms
Vin
10 %
90 %
90 %
90 %
Vout
td (on)
10 %
10 %
tr
td (off)
tf
7
2SJ234(L), 2SJ234(S)
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1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part
of this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party
or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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