2SK3398 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) 2SK3398 Switching Regulator and DC-DC Converter Applications Motor Drive Applications • Low drain-source ON resistance: RDS (ON) = 0.4 mΩ (typ.) • High forward transfer admittance: |Yfs| = 9.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage VGSS ±30 V (Note 1) ID 12 Pulse (Note 1) IDP 48 Drain power dissipation (Tc = 25°C) PD 100 W Single pulse avalanche energy (Note 2) EAS 364 mJ Avalanche current IAR 12 A Repetitive avalanche energy (Note 3) EAR 10 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to150 °C DC Drain current A JEDEC ― JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Circuit Configuration Thermal Characteristics 4 Characteristics Thermal resistance, channel to case Symbol Max Unit Rth (ch-c) 1.25 °C/W 1 Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.85 mH, RG = 25 Ω, IAR = 12 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature 3 This transistor is an electrostatic-sensitive device. Please handle with caution. 1 2006-11-06 2SK3398 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Typ. Max Unit VGS = ±25 V, VDS = 0 V ⎯ ⎯ ±10 μA V (BR) GSS IG = ±10 μA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 500 V, VGS = 0 V ⎯ ⎯ 100 μA Drain cut-OFF current Drain-source breakdown voltage Min IGSS Gate leakage current Drain-source breakdown voltage Test Condition V (BR) DSS ID = 10 mA, VGS = 0 V 500 ⎯ ⎯ V Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Gate threshold voltage Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 6 A ⎯ 0.4 0.52 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 6 A 4.0 9.0 ⎯ S Input capacitance Ciss ⎯ 2040 ⎯ Reverse transfer capacitance Crss ⎯ 200 ⎯ Output capacitance Coss ⎯ 630 ⎯ ⎯ 22 ⎯ ⎯ 58 ⎯ ⎯ 36 ⎯ ⎯ 180 ⎯ ⎯ 45 ⎯ ⎯ 25 ⎯ ⎯ 20 ⎯ Test Condition Min Typ. Max Unit 12 A Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz ID = 6 A 10 V VGS tr 0V ton Switching time Fall time RL = 33 Ω 50 Ω Turn-ON time VOUT tf Turn-OFF time Duty < = 1%, tw = 10 μs toff Total gate charge (gate-source plus gate-drain) Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd VDD ∼ − 200 V VDD ∼ − 400 V, VGS = 10 V, ID = 10 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ IDRP ⎯ ⎯ ⎯ 48 A Forward voltage (diode) VDSF IDR = 12 A, VGS = 0 V ⎯ ⎯ −1.7 V Reverse recovery time trr IDR = 12 A, VGS = 0 V, ⎯ 1200 ⎯ ns Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 16 ⎯ μC Pulse drain reverse current (Note 1) Marking Part No. (or abbreviation code) K3398 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-06 2SK3398 ID – VDS ID – VDS 12 24 6 10 10 5.2 8 4.75 6 4 4.5 2 4.25 Common source 6.0 Tc = 25°C 5.5 15 20 5 15 Drain current ID (A) Drain current ID (A) Common source 10 Tc = 25°C pulse test pulse test 5.75 16 5.2 12 5.0 4.75 8 4.5 4 VGS = 4.0 V VGS = 4 V 0 0 2 4 6 8 Drain-source voltage 0 0 10 10 VDS (V) 20 30 40 Drain-source voltage ID – VGS VDS (V) pulse test 16 Drain-source voltage Drain current ID (A) Common source VDS = 20 V 12 8 100 0 0 Tc = −55°C 25 4 2 4 6 8 Gate-source voltage 10 Tc = 25°C 10 pulse test 8 6 ID = 12 A 4 6 2 3 0 0 12 4 VGS (V) 8 10 Common source 20 24 25 5 3 1 (Ω) 100 Common source 5 Tc = 25°C Pulse test 3 RDS (ON) Drain-source on resistance Tc = −55°C 10 Pulse test 16 VGS (V) RDS (ON) − ID 30 VDS = 20 V 12 Gate-source voltage ⎪Yfs⎪ − ID (S) VDS (V) VDS – VGS Common source Forward transfer admittance ⎪Yfs⎪ 60 12 24 20 50 1 VGS = 10, 15 V 0.5 0.3 0.5 0.3 0.1 0.3 0.5 1 3 5 10 0.1 0.1 30 Drain current ID (A) 0.3 0.5 1 3 5 10 30 Drain current ID (A) 3 2006-11-06 2SK3398 IDR − VDS 100 (A) Common source VGS = 10 V pulse test 2.0 Drain reverse current IDR 1.5 ID = 12 A 1.0 3 6 0.5 Common source Tc = 25°C 30 pulse test 10 3 10 1 5 3 0.3 0 40 80 0.1 160 −0.2 0 Tc (°C) −0.4 5 Vth (V) Ciss 1000 500 Gate threshold voltage Capacitance C (pF) 3000 300 Coss 100 50 Crss Common source VGS = 0 V f = 1 MHz Tc = 25°C 0.3 0.5 1 3 5 Drain-source voltage 10 30 50 4 VDS (V) 3 2 1 −40 0 40 80 VDS (V) VDS (V) 40 Drain-source voltage 30 20 10 Case temperature 120 160 Dynamic input/output characteristics 600 80 120 Case temperature Tc (°C) PD − Tc 40 −1.2 Common source VDS = 10 V ID = 1 mA pulse test 0 −80 100 50 0 0 −1.0 Vth − Tc Capacitance – VDS 10 0.1 −0.8 Drain-source voltage 5000 30 −0.6 160 500 400 VDS 24 20 16 VDD = 80 V 300 200 12 400 200 8 100 0 0 200 Common source ID = 12 A Tc = 25°C pulse test 6 VGS 10 20 30 40 50 VGS (V) −40 Case temperature Drain power dissipation PD (W) 1 VGS = 1 V 0 −80 Gate-source voltage Drain-source on resistance RDS (ON) (Ω) RDS (ON) − Tc 2.5 0 60 Total gate charge Qg (nC) Tc (°C) 4 2006-11-06 2SK3398 rth − tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 3 1 Duty = 0.5 0.3 0.1 0.2 0.1 0.05 0.02 PDM 0.03 Single Pulse t T 0.01 0.01 Duty = t/T Rth (ch-c) = 1.25°C/W 0.003 10 μ 100 μ 1m 10 m Pulse width 100 m tw 1 (S) Safe operating area EAS – Tch 100 500 ID max (pulsed) * 30 Avalanche energy EAS (mJ) 50 100 μs * ID max (continuous) Drain current ID (A) 10 1 ms * 5 3 1 10 DC operation Tc = 25°C 0.5 400 300 200 100 0.3 0 25 50 0.1 Drain-source voltage 100 125 150 Channel temperature (initial) Tch (°C) 0.05 *: Single nonrepetitive pulse Tc = 25°C 0.03 Curves must be derated linearly with increase in temperature. 0.01 10 1 75 VDSS max 100 1000 15 V VDS (V) BVDSS IAR −15 V VDS VDD Test circuit RG = 25 Ω VDD = 90 V, L = 4.3 mH 5 Wave form Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2006-11-06 2SK3398 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-06