DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1709 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management switch. FEATURES PACKAGE DRAWING (Unit : mm) • Low on-resistance 8 RDS(on)1 = 9.3 mΩ (TYP.) (VGS = 10 V, ID = 4.5 A) 5 RDS(on)2 = 13.8 mΩ (TYP.) (VGS = 4.5 V, ID = 4.5 A) 1,2,3 ; Source ; Gate 4 5,6,7,8 ; Drain • Low Ciss : Ciss = 1850 pF (TYP.) • Built-in G-S protection diode • Small and surface mount package (Power SOP8) PACKAGE µ PA1709G Power SOP8 4.4 1.27 0.40 +0.10 –0.05 VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±25 V Drain Current (DC) ID(DC) ±9.0 A ID(pulse) ±36 A PT 2.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to + 150 °C Total Power Dissipation (TA = 25°C) Note2 0.10 0.12 M Drain to Source Voltage (VGS = 0 V) Drain Current (pulse) 0.5 ±0.2 0.78 Max. ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Note1 0.8 +0.10 –0.05 0.15 PART NUMBER 6.0 ±0.3 4 5.37 Max. 0.05 Min. 1.8 Max. ORDERING INFORMATION 1.44 1 EQUIVARENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1 % 2 2. Mounted on ceramic substrate of 1200 mm x 0.7 mm Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. Document No. G13436EJ1V0DS00 (1st edition) Date Published November 1998 NS CP(K) Printed in Japan © 1998 µ PA1709 ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.) CHARACTERISTICS SYMBOL Drain to Source On-state Resistance TEST CONDITIONS MIN. TYP. MAX. UNIT RDS(on)1 VGS = 10 V, ID = 4.5 A 9.3 12.5 mΩ RDS(on)2 VGS = 4.5 V, ID = 4.5 A 13.8 20.0 mΩ VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.0 2.5 V Forward Transfer Admittance | yfs | VDS = 10 V, ID = 4.5 A 8.0 14 Drain Leakage Current IDSS VDS = 40 V, VGS = 0 V 10 µA Gate to Source Leakage Current IGSS VGS = ±25 V, VDS = 0 V ±10 µA Input Capacitance Ciss VDS = 10 V 1850 pF Output Capacitance Coss VGS = 0 V 790 pF 330 pF ID = 4.5 A 27 ns VGS(on) = 10 V 95 ns 110 ns 70 ns ID = 9.0 A 43.0 nC VDD = 32 V 6.0 nC Gate to Source Cut-off Voltage Reverse Transfer Capacitance Crss Turn-on Delay Time td(on) Rise Time f = 1 MHz tr Turn-off Delay Time VDD = 20 V td(off) Fall Time RG = 10 Ω tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain Charge VGS = 10 V 14.0 nC VF(S-D) IF = 9.0 A, VGS = 0 V 0.78 V trr IF = 9.0 A, VGS = 0 V 47 ns Qrr di/dt = 100 A/ µ s 44 nC QGD Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge TEST CIRCUIT 2 GATE CHARGE TEST CIRCUIT 1 SWITCHING TIME D.U.T. IG = 2 mA D.U.T. VGS RL VGS PG. RG RG = 10 Wave Form 0 VGS (on) 10 % 90 % PG. VDD 90 % ID 90 % ID VGS 0 I D Wave Form t= 1 s Duty Cycle 2 0 10 % 10 % tr td (on) t ton 1% S td (off) tf toff 50 RL VDD µ PA1709 TYPICAL CHARACTERISTICS (TA = 25 °C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 100 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 2.8 80 60 40 20 0 20 40 60 80 2.0 1.6 1.2 0.8 0.4 0 100 120 140 160 Mounted on ceramic substrate of 1200 mm2 0.7 mm 2.4 TA - Ambient Temperature - ˚C 20 40 60 80 100 120 140 160 TA - Ambient Temperature - ˚C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD BIAS SAFE OPERATING AREA 100 Mounted on ceramic = 1 m ID - Drain Current - A 10 m s 0m n io at ip C D iss rD s we 1 Pulsed 50 s ID(DC) 10 R (V DS(o G n) S = 1Lim 0 V ite ) d 10 PW ID(pulse) Po 40 VGS = 10 V 4.5 V 30 20 10 d TA = 25 ˚C 0.1 Single Pulse 0.1 0 ite m Li ID - Drain Current - A substrate of 1200 mm2 0.7 mm 1 10 100 VDS - Drain to Source Voltage - V 0 0.4 0.8 VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS ID - Drain Current - A 100 Pulsed 10 TA = 150 ˚C 125 ˚C 75 ˚C 25 ˚C -25 ˚C -50 ˚C 1 0.1 0 2 4 VDS = 10 V 8 6 VGS - Gate to Source Voltage - V 3 µ PA1709 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - ˚C/W 1 000 Rth(CH-A) = 62.5 ˚C/W 100 10 1 0.1 0.01 Mounted on ceramic substrate of 1200 mm2 Single Pulse 0.001 100 10 1m 10 m 100 m 1 10 0.7 mm 100 1 000 PW - Pulse Width - s FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 10 Pulsed TA = -50 ˚C -25 ˚C 25 ˚C 75 ˚C 125 ˚C 150 ˚C 1 VDS = 0 V 0.1 0.1 1 100 10 ID- Drain Current - A RDS(on) - Drain to Source On-state Resistance - m |yfs| - Forward Transfer Admittance - S 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 60 40 20 ID = 4.5 A 0 VGS - Gate to Source Voltage - V GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE 4 Pulsed 30 20 VGS = 4.5 V 10 10 V 0 1 10 ID - Drain Current - A 100 VGS(off) - Gate to Source Cut-off Voltage - V RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 40 15 10 5 VDS = 10 V ID = 1 mA 2.6 1.8 1.0 -40 0 40 80 Tch - Channel Temperature - ˚C 120 µ PA1709 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed 40 100 ISD - Diode Forward Current - A 30 VGS = 4.5 V 20 10 V 10 ID = 4.5 A 0 -50 50 0 100 VGS = 10 V 10 0V 1 0.1 150 0 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS Coss Crss 100 1 10 100 td(on), tr, td(off), tf - Switching Time - ns 1 000 10 0.1 tr td(off) 100 tf td(on) 10 VDS = 20 V VGS = 10 V RG = 10 1 0.1 1 REVERSE RECOVERY TIME vs. DIODE CURRENT VDS - Drain to Source Voltage - V di/dt = 100 A/ s VGS = 0 V 100 10 1 0.1 1 10 ID - Diode Current - A 10 100 ID - Drain Current - A VDS - Drain to Source Voltage - V 1 000 1.5 1.0 1 000 VGS = 0 V f = 1 MHz Ciss trr - Reverse Recovery Time - ns Ciss, Coss, Crss - Capacitance - pF 10 000 0.5 VSD - Source to Drain Voltage - V Tch - Channel Temperature - ˚C 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 80 ID = 9.0 A VDD = 32 V 14 20 V 12 60 8V VGS 10 40 8 6 4 20 2 VDS 0 20 40 60 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 QG - Gate Charge - nC 5 µ PA1709 [MEMO] 6 µ PA1709 [MEMO] 7 µ PA1709 No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. 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Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC’s Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product. M4 96. 5