BFR949F NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 2 3 collector currents from 1 mA to 20 mA fT = 9 GHz 1 F = 1 dB at 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR949F Marking RKs Pin Configuration 1=B 2=E Package TSFP-3 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 10 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 1.5 Collector current IC 35 Base current IB 4 Total power dissipation1) Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA TS 93°C Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS 225 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jan-04-2002 BFR949F Electrical Characteristics Symbol Parameter Values Unit min. typ. max. 10 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 0.1 µA hFE 100 140 200 - Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 , VBE = 0 V Collector -base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gainIC = 5 mA, VCE = 6 V 2 Jan-04-2002 BFR949F Electrical Characteristics Parameter Symbol AC Characteristics Transition frequency fT 7 9 - GHz Collector-base capacitance Ccb - 0.3 - pF VCB = 10 V, f = 1 MHz, VBE = vbe = 0 Collector emitter capacitance Cce - 0.2 - VCE = 10 V, f = 1 MHz, VBE = vbe = 0 Emitter-base capacitance Ceb - 0.7 - Values min. typ. max. Unit IC = 15 mA, VCE = 6 V, f = 1 GHz VEB = 0.5 V, f = 1 MHz, VCB = vcb = 0 Noise figure dB F IC = 5 mA, VCE = 6 V, ZS = ZSopt , f = 1 GHz - 1 2.5 IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 1.8 GHz - 1.5 - Gms - 21 - - Gma - 15.5 - dB Power gain1) IC = 10 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 900 MHz Power gain, maximum available1) IC = 10 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , f = 1.8 GHz |S21e|2 Transducer gain dB IC = 15 mA, VCE = 6 V, ZS = ZL = 50 , f = 1 GHz - 17 - IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 1.8 GHz - 12 - 1G 1/2 ma = |S21 / S12| (k-(k²-1) ), Gms = |S21 / S12| 3 Jan-04-2002 BFR949F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: 4.36 fA IS = BF = 120 - NF = 1.085 - VAF = 30 V IKF = 0.152 mA ISE = 1.86 pF NE = 1.998 - BR = 33.322 - NR = 1.095 - VAR = 41.889 V IKR = 0.063 A 3.68 pA NC = 1.569 - 20.766 IRB = 72.2 mA RBM = 0.823 RB = ISC = RE = 0.101 - RC = 0.849 CJE = 291 fF VJE = 0.568 V MJE = 0.456 - TF = 8.77 ps XTF = 0.00894 - VTF = 0.198 V ITF = 1.336 mA PTF = 0 deg CJC = 459 fF VJC = 1.048 V MJC = 0.334 - XCJC = 0.217 - TR = 1.39 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - NK = 0.5 - EG = 1.11 eV . - - FC = 0.924 TNOM 300 K All parameters are ready to use, no scalling is necessery. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil- und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C1 L2 B Transistor Chip B’ C’ L3 C E’ C6 C2 L1 E C3 C5 L1 = 0.556 nH L2 = 0.657 nH L3 = 0.381 nH C1 = 43 fF C2 = 123 fF C3 = 66 fF C4 = 10 fF C5 = 36 fF C6 = 47 fF EHA07524 Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Jan-04-2002