BTB1198A3

CYStech Electronics Corp.
Spec. No. : C824A3
Issued Date : 2007.02.28
Revised Date : 2014.07.04
Page No. : 1/7
PNP Epitaxial Planar Transistor
BTB1198A3
Features
 Low VCE(SAT), VCE(SAT)= -0.16V (Typ.) @ IC/IB=-500mA/-50mA
 High breakdown voltage, BVCEO=-80V
 Complementary to BTD1768A3
 Pb-free lead plating and halogen-free package
Symbol
Outline
BTB1198A3
TO-92
B：Base
C：Collector
E：Emitter
ECB
Ordering Information
Device
BTB1198A3-X-TB-G
BTB1198A3-X-BK-G
Package
TO-92
(Pb-free lead plating and halogen-free package)
TO-92
(Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / Tape & Box
1000 pcs/ bag, 10 bags/box,
10boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTB1198A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C824A3
Issued Date : 2007.02.28
Revised Date : 2014.07.04
Page No. : 2/7
Absolute Maximum Ratings (Ta=25C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
Tj
Tstg
Limits
-80
-80
-5
-1
-2 (Note)
750
167
-55~+150
-55~+150
Unit
V
V
V
A
A
mW
C/W
C
C
Note : Pulse test, PW ≤ 10ms, Duty ≤ 50%.
Characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on) 1
*VBE(on) 2
*hFE
fT
Cob
Min.
-80
-80
-5
120
-
Typ.
-0.16
-0.63
-0.73
200
11
Max.
-0.5
-0.5
-0.5
-0.7
-0.9
560
-
Unit
V
V
V
µA
µA
V
V
V
MHz
pF
Test Conditions
IC=-50μA
IC=-2mA
IE=-50μA
VCB=-50V
VEB=-4V
IC=-500mA, IB=-50mA
VCE=-3V, IC=-10mA
VCE=-3V, IC=-200mA
VCE=-3V, IC=-100mA
VCE=-10V, IC=-50mA, f=100MHz
VCB=-10V, f=1MHz
*Pulse Test: Pulse Width 380μs, Duty Cycle2%
Classification Of hFE
Rank
Q
R
S
Range
120~270
180~390
270~560
BTB1198A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C824A3
Issued Date : 2007.02.28
Revised Date : 2014.07.04
Page No. : 3/7
Characteristic Curves
Output Characteristics
Output Characteristics
0.1
0.45
IB=2.5mA
0.4
Collector Current---IC(A)
Collector Current---IC(A)
IB=500uA
IB=400uA
IB=300uA
0.05
IB=200uA
IB=100uA
0.35
IB=2mA
0.3
IB=1.5mA
0.25
IB=1mA
0.2
0.15
IB=500uA
0.1
0.05
IB=0
IB=0
0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
0
6
Output Characteristics
1.2
IB=10mA
0.8
IB=8mA
0.7
Collector Current---IC(A)
Collector Current---IC(A)
6
Output Characteristics
0.9
IB=6mA
0.6
IB=4mA
0.5
0.4
IB=2mA
0.3
0.2
0.1
IB=25mA
IB=20mA
1
IB=15mA
0.8
IB=10mA
0.6
IB=5mA
0.4
0.2
IB=0
IB=0
0
0
0
1
2
3
4
5
6
0
Collector-to-Emitter Voltage---VCE(V)
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
10000
Saturation Voltage---(mV)
1000
VCE=3V
Current Gain---HFE
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
100
VCE=2V
10
VCE=1V
VCE(SAT)
1000
IC=25IB
100
IC=20IB
IC=10IB
10
1
1
BTB1198A3
10
100
1000
Collector Current---IC(mA)
10000
1
10
100
1000
Collector Current---IC(mA)
10000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C824A3
Issued Date : 2007.02.28
Revised Date : 2014.07.04
Page No. : 4/7
Characteristic Curves(Cont.)
Saturation Voltage vs Collector Current
On Voltage vs Collector Current
1000
VBE(SAT)@IC=10IB
On Voltage---(mV)
Saturation Voltage---(mV)
10000
1000
100
1
10
100
1000
Collector Current---IC(mA)
VBEON@VCE=3V
100
10000
1
10
100
Collector Current---IC(mA)
Power Derating Curve
Cutoff frequency vs Collector Current
1000
800
Power Dissipation---PD(mW)
Cutoff Frequency---fT(MHz)
1000
VCE=10V
100
700
600
500
400
300
200
100
0
10
1
10
100
Collector Current---IC(mA)
1000
0
50
100
150
200
Ambient Temperature---TA(℃)
Capacitance Characteristics
Collector Output Capacitance--Cob(pF)
100
10
1
1
BTB1198A3
10
100
Reverse-biased Collector Base Voltage---VCB(V)
CYStek Product Specification
Spec. No. : C824A3
Issued Date : 2007.02.28
Revised Date : 2014.07.04
Page No. : 5/7
CYStech Electronics Corp.
TO-92 Taping Outline
H2
H2A H2A
H2
D2
A
L
H3
H4 H
L1
H1
D1
F1F2
T2
T
T1
DIM
A
D
D1
D2
F1,F2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
-
BTB1198A3
P1
P
Item
Component body height
Tape Feed Diameter
Lead Diameter
Component Body Diameter
Component Lead Pitch
F1-F2
Height Of Seating Plane
Feed Hole Location
Front To Rear Deflection
Deflection Left Or Right
Component Height
Feed Hole To Bottom Of Component
Lead Length After Component Removal
Lead Wire Enclosure
Feed Hole Pitch
Center Of Seating Plane Location
4 Feed Hole Pitch
Over All Tape Thickness
Total Taped Package Thickness
Carrier Tape Thickness
Tape Width
Adhesive Tape Width
20 pcs Pitch
W1
W
D
P2
Millimeters
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
2.50
12.50
5.95
50.30
0.36
17.50
5.00
253
Max.
4.83
4.20
0.53
4.83
2.90
0.3
16.50
9.50
1
1
27
21
11
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
255
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C824A3
Issued Date : 2007.02.28
Revised Date : 2014.07.04
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5C of actual peak
temperature(tp)
Ramp down rate
Time 25 C to peak temperature
BTB1198A3
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
100C
150C
60-120 seconds
150C
200C
60-180 seconds
183C
60-150 seconds
240 +0/-5 C
217C
60-150 seconds
260 +0/-5 C
10-30 seconds
20-40 seconds
6C/second max.
6 minutes max.
6C/second max.
8 minutes max.
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C824A3
Issued Date : 2007.02.28
Revised Date : 2014.07.04
Page No. : 7/7
TO-92 Dimension
Marking:
2
A
Product Name
HFE
Rank
B1198 □
B
□□
1
2
3
Date Code: Year+Month
Year: 4→2004, 5→2005
3
Month: 1→1, 2→2, ‧‧‧,
C
D
9→9, A→10, B→11, C→12
H
I
G
1
Style: Pin 1.Emitter 2.Collector 3.Base
E
F
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
1
2
3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5
*2
*2
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5
*2
*2
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
 Lead: Pure tin plated.
 Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
 CYStek reserves the right to make changes to its products without notice.
 CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
 CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTB1198A3
CYStek Product Specification