BTC2655K3

Spec. No. : C602K3
Issued Date : 2011.12.21
Revised Date :2013.12.25
Page No. : 1/7
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC2655K3
BVCEO
IC
RCESAT(max)
60V
2A
300mΩ
Features
• High breakdown voltage, BVCEO≥ 60V
• Large continuous collector current capability
• Low collector saturation voltage
• Pb-free lead plating package
Symbol
Outline
BTC2655K3
TO-92L
B:Base
C:Collector
E:Emitter
Ordering Information
Device
BTC2655K3-0-TB-G
BTC2655K3-0-BM-G
Package
TO-92L
(Pb-free lead plating and halogen-free package)
TO-92L
(Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / tape & box
500 pcs / bag, 10 bags/box,
10 boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB : 2000 pcs / tape & box ; BM : 500 pcs/bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTC2655K3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C602K3
Issued Date : 2011.12.21
Revised Date :2013.12.25
Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
RθJA
Tj ; Tstg
Limits
120
60
7
2
5 (Note)
0.5
900
139
-55~+150
Unit
V
V
V
A
A
A
mW
°C/W
°C
Note : Pulse test, pulse width≤300μs, duty cycle≤2%
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*RCE(sat)
*VCE(sat)
*VBE(sat)
*hFE 1
*hFE 2
fT
Cob
ton
tstg
tf
Min.
120
60
7
0.5
200
80
-
Typ.
100
100
0.9
250
13
40
500
120
Max.
100
100
300
300
350
1.2
400
-
Unit
V
V
V
nA
nA
mV
mΩ
mV
V
MHz
pF
ns
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=120V
VEB=7V
IC=1A, IB=50mA
IC=1A, IB=50mA
IC=1A, IB=20mA
IC=1A, IB=50mA
VCE=2V, IC=500mA
VCE=2V, IC=1.5A
VCE=2V, IC=300mA, f=100MHz
VCB=10V, IE=0A,f=1MHz
VCC=30V, IC=1A, IB1=-IB2=33mA,
RL=30Ω
*Pulse Test: Pulse Width ≤300μs, Duty Cycle≤2%
BTC2655K3
CYStek Product Specification
Spec. No. : C602K3
Issued Date : 2011.12.21
Revised Date :2013.12.25
Page No. : 3/7
CYStech Electronics Corp.
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
2000
700
Collector Current---IC(mA)
1600
Collector Current---IC(A)
IB=10mA
IB=8mA
1800
IB=6mA
1400
1200
IB=4mA
1000
800
600
IB=2mA
400
IB=2.5mA
600
IB=2mA
500
400
IB=1.5mA
300
IB=1mA
200
IB=500uA
100
200
IB=0
IB=0
0
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
0
6
Emitter Grounded Output Characteristics
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
140
1000
IB=500uA
VCE=5V
120
IB=400uA
100
80
IB=300uA
60
IB=200uA
Current Gain---HFE
Collector Current---IC(mA)
6
40
VCE=2V
100
VCE=1V
IB=100uA
20
IB=0
0
10
0
1
2
3
4
5
6
1
Collector-to-Emitter Voltage---VCE(V)
10000
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
1000
VCE(SAT)
Saturation Voltage---(mV)
Saturation Voltage---(mV)
10
100
1000
Collector Current---IC(mA)
1000
IC=100IB
IC=50IB
100
VBE(SAT)@IC=50IB
IC=20IB
10
100
1
BTC2655K3
10
100
1000
Collector Current---IC(mA)
10000
1
10
100
1000
Collector Current---IC(mA)
10000
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C602K3
Issued Date : 2011.12.21
Revised Date :2013.12.25
Page No. : 4/7
Characteristic Curves(Cont.)
Capacitance Characteristics
On Voltage vs Collector Current
1000
1000
On Voltage---(mV)
Capacitance---(pF)
f=1MHz
Cib
100
10
Cob
VCE=2V
1
100
1
10
100
1000
Collector Current---IC(mA)
0.1
10000
1
10
Reverse-biased Voltage---(V)
100
Cutoff Frequency vs Collector Current
Power Derating Curve
1000
900
Power Dissipation---PD(mW)
Cutoff Frequency---FT(MHZ)
1000
[email protected]=5V
100
10
1
BTC2655K3
10
100
Collector Current --- IC(mA)
1000
800
700
600
500
400
300
200
100
0
0
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C602K3
Issued Date : 2011.12.21
Revised Date :2013.12.25
Page No. : 5/7
TO-92L Taping Outline
DIM
A1
A
T
d
d1
P
P0
P2
F1, F2
△h
W
W0
W1
W2
H
H0
L1
D0
t1
t2
P1
△P
BTC2655K3
Item
Millimeters
Component body width
Component body height
Component body thickness
Lead wire diameter
Lead wire diameter 1
Pitch of component
Feed hole pitch
Hole center to component center
Lead to lead distance
Component alignment, F-R
Tape width
Hole down tape width
Hole position
Hole down tape position
Height of component from tape center
Lead wire clinch height
Lead wire (tape portion)
Feed hole diameter
Taped lead thickness
Carrier tape thickness
Position of hole
Min.
4.70
7.80
3.70
0.35
0.60
12.40
12.50
6.05
2.20
-1.00
17.50
5.50
8.50
19.00
15.50
2.50
3.80
0.35
0.15
3.55
Max.
5.10
8.20
4.10
0.55
0.80
13.00
12.90
6.65
2.80
1.00
19.00
6.50
9.50
1.00
21.00
16.50
4.20
0.45
0.25
4.15
Component alignment
-1.00
1.00
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C602K3
Issued Date : 2011.12.21
Revised Date :2013.12.25
Page No. : 6/7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC2655K3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C602K3
Issued Date : 2011.12.21
Revised Date :2013.12.25
Page No. : 7/7
TO-92L Dimension
Marking:
Product Name
C2655
Date Code: Year+Month
□□
Year: 7→2007, 8→2008
Month: 1→1, 2→2, ‧‧‧,
9→9, A→10, B→11, C→12
Style: Pin 1.Emitter 2.Collector 3.Base
3-Lead TO-92L Plastic Package
CYStek Package Code: K3
Inches
DIM
Min.
0.146
0.050
0.014
0.024
0.014
0.185
0.157
Max.
0.161
0.062
0.022
0.031
0.018
0.201
-
Millimeters
Min.
Max.
3.700
4.100
1.280
1.580
0.350
0.550
0.600
0.800
0.350
0.450
4.700
5.100
4.000
-
A
A1
b
b1
c
D
D1
Notes: 1.Controlling dimension: millimeters.
DIM
E
e
e1
L
ϕ
h
Inches
Min.
0.307
Max.
0.323
*0.05
0.096
0.543
0.000
0.104
0.559
0.063
0.012
*: Typical
Millimeters
Min.
Max.
7.800
8.200
*1.270
2.440
2.640
13.800
14.200
1.600
0.000
0.300
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC2655K3
CYStek Product Specification