BTC945A3

Spec. No. : C204A3
Issued Date : 2003.04.01
Revised Date : 2014.06.10
Page No. : 1 / 7
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
BTC945A3
Description
• The BTC945A3 is designed for use in driver stage of AF amplifier and low speed switching.
• Complementary to BTA733A3.
• Pb-free package
Symbol
Outline
BTC945A3
TO-92
B:Base
C:Collector
E:Emitter
ECB
Ordering Information
Device
BTC945A3-X-TB-G
BTC945A3-X-BK-G
Package
TO-92
(Pb-free lead plating and halogen-free package)
TO-92
(Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / Tape & Box
1000 pcs/ bag, 10 bags/box,
10boxes/carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton
Product rank, zero for no rank products
Product name
BTC945A3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C204A3
Issued Date : 2003.04.01
Revised Date : 2014.06.10
Page No. : 2 / 7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation @Ta=25℃
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
IB
Pd
RθJA
Tj
Tstg
Limits
60
50
5
200
20
625
200
150
-55~+150
Unit
V
V
V
mA
mA
mW
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
VBE
hFE1
hFE2
fT
Cob
Min.
60
50
5
0.55
50
135
150
-
Typ.
0.2
0.85
9
Max.
100
100
0.3
1.0
0.65
600
15
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=10μA
VCB=60V
VEB=5V
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=1mA
VCE=6V, IC=0.1mA
VCE=6V, IC=1mA
VCE=6V, IC=10mA, f=100MHz
VCB=6V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Classification of hFE 2
Rank
Range
BTC945A3
Q
135-270
P
200-400
K
300-600
CYStek Product Specification
Spec. No. : C204A3
Issued Date : 2003.04.01
Revised Date : 2014.06.10
Page No. : 3 / 7
CYStech Electronics Corp.
Typical Characteristics
Emitter Grounded Output Characteristics
Emitter Grounded Output Characteristics
0.7
0.15
500uA
400uA
300uA
0.1
0.05
5mA
0.6
1mA
0.2
Collector Current---IC(A)
Collector Current---IC(A)
0.25
200uA
IB=100uA
0
0.5
0.4
2.5mA
2mA
0.3
1.5mA
0.2
1mA
0.1
IB=500uA
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
0
6
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
Current Gain vs Collector Current
1000
1000
Ta=125°C
Current Gain---HFE
Current Gain---HFE
Ta=125°C
100
Ta=75°C
Ta=25°C
100
Ta=25°C
Ta=75°C
VCE=2V
VCE=1V
10
10
1
10
100
Collector Current---IC(mA)
1
1000
Current Gain vs Collector Current
10
100
Collector Current---IC(mA)
1000
Saturation Voltage vs Collector Current
1000
1000
Ta=125°C
VCESAT=10IB
Saturation Voltage---(mV)
Current Gain---HFE
6
100
Ta=25°C
Ta=75°C
100
125°C
75°C
25°C
VCE=10V
10
10
1
BTC945A3
10
100
Collector Current---IC(mA)
1000
1
10
100
Collector Current---IC(mA)
1000
CYStek Product Specification
Spec. No. : C204A3
Issued Date : 2003.04.01
Revised Date : 2014.06.10
Page No. : 4 / 7
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
Saturation Voltage vs Collector Current
10000
1000
[email protected]=10IB
Saturation Voltage---(mV)
Saturation Voltage---(mV)
VCESAT=20IB
100
125°C
75°C
25°C
Ta=75°C
Ta=25°C
1000
125°C
100
10
1
10
100
Collector Current---IC(mA)
1
1000
10
100
Collector Current---IC(mA)
1000
Capacitance vs Reverse-biased Voltage
On Voltage vs Collector Current
100
10000
[email protected]=10V
75°C
Capacitance---(pF)
On Voltage---(mV)
Cib
25°C
1000
10
Cob
125°C
100
1
1
10
100
Collector Current---IC(mA)
1000
0.1
Transition Frequency vs Collector Current
100
Power Derating Curve
1000
700
VCE=5V
Power Dissipation---PD(mW)
Transition Frequency---fT(MHz)
1
10
Reverse-biased Voltage---VR(V)
100
600
500
400
300
200
100
10
0
1
BTC945A3
10
100
Collector Current---IC(mA)
1000
0
50
100
150
Ambient Temperature---TA(℃)
200
CYStek Product Specification
Spec. No. : C204A3
Issued Date : 2003.04.01
Revised Date : 2014.06.10
Page No. : 5 / 7
CYStech Electronics Corp.
TO-92 Taping Outline
H2
H2A H2A
H2
D2
A
L
H3
H4 H
L1
H1
D1
F1F2
T2
T
T1
DIM
A
D
D1
D2
F1,F2
F1,F2
H
H1
H2
H2A
H3
H4
L
L1
P
P1
P2
T
T1
T2
W
W1
-
BTC945A3
P1
P
Item
Component body height
Tape Feed Diameter
Lead Diameter
Component Body Diameter
Component Lead Pitch
F1-F2
Height Of Seating Plane
Feed Hole Location
Front To Rear Deflection
Deflection Left Or Right
Component Height
Feed Hole To Bottom Of Component
Lead Length After Component Removal
Lead Wire Enclosure
Feed Hole Pitch
Center Of Seating Plane Location
4 Feed Hole Pitch
Over All Tape Thickness
Total Taped Package Thickness
Carrier Tape Thickness
Tape Width
Adhesive Tape Width
20 pcs Pitch
W1
W
D
P2
Millimeters
Min.
4.33
3.80
0.36
4.33
2.40
15.50
8.50
2.50
12.50
5.95
50.30
0.36
17.50
5.00
253
Max.
4.83
4.20
0.53
4.83
2.90
±0.3
16.50
9.50
1
1
27
21
11
12.90
6.75
51.30
0.55
1.42
0.68
19.00
7.00
255
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C204A3
Issued Date : 2003.04.01
Revised Date : 2014.06.10
Page No. : 6 / 7
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTC945A3
CYStek Product Specification
Spec. No. : C204A3
Issued Date : 2003.04.01
Revised Date : 2014.06.10
Page No. : 7 / 7
CYStech Electronics Corp.
TO-92 Dimension
α2
A
Marking:
B
1
2
C945 □
3
□□
α3
C
HFE rank
Date Code
D
H
I
G
α1
Style: Pin 1.Emitter 2.Collector 3.Base
E
F
3-Lead TO-92 Plastic Package
CYStek Package Code: A3
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC945A3
CYStek Product Specification