SDP07N80 SDF07N80

SDP07N80
SDF07N80
S a mHop Microelectronics C orp.
Ver 1.1
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low R DS(ON).
PRODUCT SUMMARY
V DSS
ID
R DS(ON) ( Ω) Typ
800V
7A
1.4 @ VGS=10V
Rugged and reliable.
TO-220 and TO-220F Package.
D
G
G D S
G D S
SDF SERIES
TO-220F
SDP SERIES
TO-220
ORDERING INFORMATION
Ordering Code
Package
S
Tube
RoHS Status
Halogen Free
Tube
Pb Free
SDF07N80
Tube
Halogen Free
07N80
Tube
Pb Free
SDP07N80HZ
TO-220
Marking Code
SDP07N80
SDP07N80PZ
TO-220
07N80
SDF07N80HZ
TO-220F
SDF07N80PZ
TO-220F
Delivery Mode
ABSOLUTE MAXIMUM RATINGS ( T C=25 °C unless otherwise noted )
Symbol
VDS
VGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
ID
Drain Current-Continuous
IDM
-Pulsed
SDP07N80 SDF07N80
800
±30
±30
TC=25°C
TC=100°C
a
a
E AS
Single Pulse Avalanche Energy
PD
Maximum Power Dissipation
TJ, TSTG
Operating Junction and Storage
Temperature Range
7
4.2
4.2
A
28
28
A
mJ
650
TC=100°C
167
56
W
67
22
W
-55 to 150
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case
R JA
Thermal Resistance, Junction-to-Ambient
0.75
62.5
Details are subject to change without notice.
A
7
c
TC=25°C
Units
V
V
2.25
62.5
°C
°C/W
°C/W
Dec,24,2013
1
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SDP07N80
SDF07N80
Ver 1.1
ELECTRICAL CHARACTERISTICS ( T C=25 °C unless otherwise noted )
4 Symbol
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
Zero Gate Voltage Drain Current
IDSS
Gate-Body Leakage Current
IGSS
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON)
Drain-Source On-State Resistance
Conditions
Min
VGS=0V , ID=250uA
800
Typ
Units
1
±100
uA
V
VDS=640V , VGS=0V
VGS= ±30V , VDS=0V
VDS=VGS , ID=250uA
VGS=10V , ID=3.5A
Max
3
1.4
5
1.9
nA
V
ohm
b
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
Output
Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
VDS=25V,VGS=0V
f=1.0MHz
1300
120
10
pF
pF
pF
40
ns
100
ns
50
ns
60
ns
27
nC
8
nC
11
nC
b
tD(ON)
Turn-On Delay Time
tr
Rise Time
tD(OFF)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VDS=640V,ID=1.0A,VGS=10V
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS=640V,ID=1.0A,
VGS=10V
VDD=400V
ID=1.0A
RGEN= 25 ohm
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD
Diode Forward Voltage
VGS=0V,IS=7.0A
1.4
V
Notes
a.Drain current limited by maximum junction temperatrue.
b.Guaranteed by design, not subject to production testing.
c.Starting TJ=25°C,L=25mH,VDD = 50V.
Dec,24,2013
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SDP07N80
SDF07N80
Ver 1.1
Dec,24,2013
3
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SDP07N80
SDF07N80
Ver 1.1
Figure 7.Breakdown Voltage Variation vs
Figure 8.On-Resistance Variation vs
Temaperature
Temperature
Figure 9-1. Maximum Safe Operating Area
for TO220
Figure 9-2. Maximum Safe Operating Area
for TO220F
Figure 10. Maximum Drain Current
vs Case Temperature
Dec,24,2013
4
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SDP07N80
SDF07N80
Ver 1.1
Figure 11-1. Transient Thermal Response Curve for TO220
Figure 11-2. Transient Thermal Response Curve for TO220F
Dec,24,2013
5
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SDP07N80
SDF07N80
Ver 1.1
Dec,24,2013
6
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SDP07N80
SDF07N80
Ver 1.1
TO-220F
A1
E
Q1
žP
A3
Q
D1
D
L2
L1
b1x3
L
bx3
c
e
SYMBOL
A
A1
A2
A3
b
b1
c
D
D1
E
E1
e
L
L1
L2
Q
Q1
žP
E1
A
A2
MILLIMETERS
MAX
MIN
4.90
4.50
2.35
2.75
2.15
2.92
0.50
0.65
0.90
0.70
1.55
1.15
0.70
0.45
16.30
15.30
6.67
6.77
9.90
10.32
9.20
9.40
2.54 REF.
9.45
10.05
2.79
3.60
15.60
16.00
3.40
3.20
7.10
6.90
3.55
2.90
Dec,24,2013
7
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SDP07N80
SDF07N80
Ver 1.1
TO-220 Tube
Dec,24,2013
8
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SDP07N80
SDF07N80
Ver 1.1
F Tube
Dec,24,2013
9
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SDP07N80
SDF07N80
Ver 1.1
TOP MARKING DEFINITION
TO-220 (Halogen Free)
SamHop Logo
SDP07N80
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot Number
TO-220 (Pb Free)
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
SamHop Logo
PB Free
Product No.
07N80
XXXXX
Production Year (2009 = 9, 2010 = A...)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B...)
Wafer Lot Number
Dec,24,2013
10
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SDP07N80
SDF07N80
Ver 1.1
TOP MARKING DEFINITION
TO-220F (Halogen Free)
SamHop Logo
SDF07N80
XXXXXX
Product No.
SMC internal code No. (A,B,C...Z)
TO-220F (Pb Free)
Wafer Lot Number
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
SamHop Logo
PB Free
Product No.
07N80
XXXXX
Production Year (2009 = 9, 2010 = A...)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B...)
Wafer Lot Number
Dec,24,2013
11
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