DC COMPONENTS CO., LTD. MPSA14 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR Description Designed for applications requiring extremely high current gain. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Base 3 = Collector o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCES 30 V Emitter-Base Voltage VEBO 10 V Collector Current IC 500 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) 3 2 1 .148(3.76) .132(3.36) .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 30 - - V IC=100µA, IE=0 Collector-Emitter Breakdown Voltage BVCES 30 - - V IC=0.1mA, VBE=0 Emitter-Base Breakdown Volatge BVEBO 10 - - V IE=10µA, IC=0 ICBO - - 0.1 µA VCB=30V, IE=0 Collector Cutoff Current Test Conditions IEBO - - 0.1 µA VEB=10V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 1.5 V IC=100mA, IB=0.1mA Collector-Emitter On Voltage VBE(on) - - 2 V IC=100mA, VCE=5V hFE1 10K - - - IC=10mA, VCE=5V hFE2 20K - - - Transition Frequency fT 125 - - MHz Output Capacitance Cob - - 6 pF Emitter Cutoff Current DC Current Gain(1) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% IC=100mA, VCE=5V IC=10mA, VCE=5V, f=100MHz VCB=10V, f=1MHz