DATA SHEET SILICON POWER TRANSISTOR 2SB1669 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SB1669 is a power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. FEATURES ORDERING INFORMATION Part No. Package 2SB1669 TO-220AB 2SB1669-S TO-262 2SB1669-Z TO-220SMD • High DC current amplifier rate hFE ≥ 100 (VCE = −5.0 V, IC = −0.5 A) • Z type available for surface mounting supported prodcuts ABSOLUTE MAXIMUM RATINGS (TA = 25°°C) Ratings Unit Collector to base voltage Parameter VCBO −60 V Collector to emitter voltage VCEO −60 V Emitter to base voltage VEBO −7.0 V Collector current (DC) IC(DC) −3.0 A Collector current (pulse) IC(pulse) −6.0 A Base current (DC) Symbol Conditions PW ≤ 10 ms, duty cycle ≤ 50% IB(DC) (TC = 25°C) −1.0 A 25 W Total power dissipation PT 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C (TA = 25°C) The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15410EJ2V0DS00 (2nd edition) Date Published July 2002 N CP(K) Printed in Japan © 2002 1998 2SB1669 ELECTRICAL CHARACTERISTICS (TA = 25°°C) Parameter Collector cutoff current DC current gain Symbol Conditions ICBO VCB = −60 V, IE = 0 A hFE1 VCE = −5.0 V, IC = −0.5 A hFE2 VCE = −5 V, IC = −3 ANote MIN. Note Collector saturation voltage VCE(sat) IC = −3.0 A, IB = −300 mANote Base saturation voltage VBE(sat) IC = −3.0 A, IB = −300 mANote Gain bandwidth product fT 100 MAX. Unit −10 µA 400 − −1.0 V − 20 −2.0 VCE = −5.0 V, IC = −0.5 A V 5 MHz Collector capacitance Cob VCB = −10 V, IE = 0 A, f = 10 MHz 80 pF Turn-on time ton 0.4 µs Storage time tstg IC = −2.0 A, RL = 15 Ω, IB1 = −IB2 = −200 mA, VCC ≅ −30 V Refer to the test circuit. 1.7 µs 0.5 µs Fall time tf Note Pulse test PW ≤ 350 µs, duty cycle ≤ 2% SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 TYP. Data Sheet D15410EJ2V0DS 2SB1669 TYPICAL CHARACTERISTICS (TA = 25°°C) Data Sheet D15410EJ2V0DS 3 2SB1669 4 Data Sheet D15410EJ2V0DS 2SB1669 PACKAGE DRAWING (UNIT: mm) 1. Base 2. Collector 3. Emitter 4. Fin (collector) 1. Base 2. Collector 3. Emitter 4. Fin (collector) 1. Base 2. Collector 3. Emitter 4. Fin (collector) Data Sheet D15410EJ2V0DS 5 2SB1669 • The information in this document is current as of July, 2002. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. 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(Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above). M8E 00. 4