S T M6930 S amHop Microelectronics C orp. Arp,20 2005 ver1.2 Dual N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS (ON) S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 45 @ V G S = 10V 55V 4.8A S urface Mount P ackage. 65 @ V G S = 4.5V D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S 2 S O-8 1 4 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) S ymbol P arameter Drain-S ource Voltage R ating Vspike V DS Drain-S ource Voltage Gate-S ource Voltage 25 C a Drain C urrent-C ontinuous @ Ta -P ulsed 70 C b Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a d 60 55 V V V 25 ID 4.8 4.1 A IDM 30 A IS 1.7 A PD Operating Junction and S torage Temperature R ange Unit V GS Ta= 25 C Ta=70 C Limit T J , T S TG A 2 1.44 W -55 to 150 C 62.5 C /W THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 S T M6930 E LE CTR ICAL CHAR ACTE R IS TICS (T A 25 C unless otherwise noted) Parameter 5 Min Typ C Max Unit S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 44V, V GS = 0V 1 Gate-Body Leakage IGS S V GS = 25V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS OFF CHAR ACTE R IS TICS 55 V uA ON CHAR ACTE R IS TICS b Forward Transconductance 1.9 2.5 V V GS =10V, ID = 4.5A 35 45 m ohm V GS =4.5V, ID= 4A 55 65 m ohm V DS = 5V, V GS = 10V V DS = 5V, ID = 4.5A 1.0 20 A 9 S DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS Gate resistance Rg S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =25V, V GS = 0V f =1.0MH Z V GS =0V, V DS = 0V, f=1.0MH Z 900 1170 PF 80 104 PF 60 78 PF 2 ohm c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd 19 25 ns 5 7 ns 22 29 ns 12 16 ns V DS =48V, ID =4.8A,V GS =10V 19 25 nC V DS =48V, ID =4.8A,V GS =4.5V 9 12 nC 4 4.5 5 6 nC nC V DD = 30V ID = 4.8 A V GS = 10V R GE N = 6 ohm V DS =48V, ID = 4.8 A V GS =10V 2 S T M6930 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage V GS = 0V, Is =1.7A VSD 0.8 1.2 Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. d.Guaranteed when external R g=6 ohm and tf < tf max 25 20 25 C V G S =10,9,8,7,6,5V 20 V G S =4V 12 8 4 V G S =3V 0 0 1 2 3 4 5 T j=125 C I D , Drain C urrent (A) ID , Drain C urrent(A) 16 -55 C 15 10 5 0 0.0 6 V DS , Drain-to-S ource Voltage (V ) 1.0 2.0 3.0 4.0 5.0 6.0 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics 1.6 1250 1.4 1000 R DS (ON) , On-R es is tance Normalized C , C apacitance (pF ) V G S =10V 1500 C is s 750 500 250 0 C os s C rs s 0 5 10 15 20 25 1.2 1.0 0.6 0.4 0 -50 30 V G S =10V I D =4.8A -25 0 25 50 75 100 125 150 T j=( C ) V DS , Drain-to S ource Voltage (V ) I D , Drain C urrent(A) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 V 1.6 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage S T M6930 V DS =V G S I D =250uA 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 20.0 12 Is , S ource-drain current (A) gF S , T rans conductance (S ) ID=250uA 1.10 T j, J unction T emperature ( C ) 15 9 6 3 V DS =5V 0 0 5 10 10.0 1.0 15 20 0.4 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 10 40 V DS =48V I D =4.8A 8 I D , Drain C urrent (A) V G S , G ate to S ource V oltage (V ) 1.15 6 4 2 10 R 0 3 6 9 12 15 18 Qg, T otal G ate C harge (nC ) L im it 10 10 0m ms s 1s DC V G S =10V S ingle P ulse T A =25 C 0.1 0.1 21 24 N) 11 0.03 0 (O DS 1 10 30 60 V DS , Drain-S ource V oltage (V ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 4 S T M6930 V DD ton 5 V IN D tf 90% 90% V OUT V OUT VG S R GE N toff td(off) tr td(on) RL INVE R TE D 10% 10% G 90% S V IN 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit Thermal Resistance Normalized Transient 10 1 0.5 0.2 0.1 P DM 0.1 0.05 t1 0.02 on 0.01 1. 2. 3. 4. Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 10 t2 R thJ A (t)=r (t) * R thJ A R thJ A =S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 S T M6930 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D A C 0.015X45° B 0.016 TYP. S Y MB OLS A A1 D E H L A1 e 0.05 TYP. 0.008 TYP. H MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0° MAX 1.75 0.25 4.98 3.99 6.20 1.27 8° 6 INC HE S MIN 0.053 0.004 0.189 0.150 0.228 0.016 0° MAX 0.069 0.010 0.196 0.157 0.244 0.050 8° S T M6930 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:㎜ PACKAGE SOP 8N 150㏕ A0 6.40 B0 5.20 K0 D0 D1 E E1 E2 2.10 ψ1.5 (MIN) ψ1.5 + 0.1 - 0.0 12.0 ±0.3 1.75 5.5 ±0.05 M N W W1 H K 330 ± 1 62 ±1.5 P1 P2 T 8.0 4.0 2.0 ±0.05 0.3 ±0.05 S G R V P0 SO-8 Reel UNIT:㎜ TAPE SIZE 12 ㎜ REEL SIZE ψ330 12.4 + 0.2 16.8 - 0.4 7 ψ12.75 + 0.15 2.0 ±0.15