NEC UPA1793G

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1793
SWITCHING
N- AND P-CHANNEL POWER MOS FET
PACKAGE DRAWING (Unit: mm)
DESCRIPTION
The µPA1793 is N- and P-Channel MOS Field Effect Transistors
8
designed for Motor Drive application.
5
N-Channel 1 ; Source 1
2 ; Gate 1
7, 8 ; Drain 1
FEATURES
P-Channel 3 ; Source 2
4 ; Gate 2
5, 6 ; Drain 2
• Low on-state resistance
N-Channel RDS(on)1 = 69 mΩ MAX. (VGS = 4.5 V, ID = 1.5 A)
6.0 ±0.3
4
4.4
0.8
+0.10
–0.05
5.37 Max.
0.15
RDS(on)2 = 120 mΩ MAX. (VGS = –4.0 V, ID = –1.5 A)
0.05 Min.
P-Channel RDS(on)1 = 115 mΩ MAX. (VGS = –4.5 V, ID = –1.5 A)
1.8 Max.
RDS(on)3 = 107 mΩ MAX. (VGS = 2.5 V, ID = 1.0 A)
1.44
1
RDS(on)2 = 72 mΩ MAX. (VGS = 4.0 V, ID = 1.5 A)
RDS(on)3 = 190 mΩ MAX. (VGS = –2.5 V, ID = –1.0 A)
• Low input capacitance
1.27
0.40
0.5 ±0.2
0.10
0.78 Max.
+0.10
–0.05
0.12 M
N-Channel Ciss = 160 pF TYP.
P-Channel Ciss = 370 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
EQUIVALENT CIRCUIT
ORDERING INFORMATION
Drain
PART NUMBER
PACKAGE
µPA1793G
Power SOP8
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Body
Diode
Gate
Gate
Protection
Diode
N-Channel
Source
P-Channel
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G16059EJ1V0DS00 (1st edition)
Date Published September 2002 NS CP(K)
Printed in Japan
©
2002
µPA1793
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain to Source Voltage (VGS = 0 V)
VDSS
20
–20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
± 12
m 12
V
Drain Current (DC)
ID(DC)
±3
m3
A
ID(pulse)
± 12
m
Drain Current (pulse) Note1
Total Power Dissipation (1 unit)
Note2
12
A
PT
1.7
W
Total Power Dissipation (2 units) Note2
PT
2.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
–55 to +150
°C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2
2. Mounted on ceramic substrate of 5500 mm × 2.2 mm, TA = 25°C
2
DataSheet G16059EJ1V0DS
µPA1793
ELECTRICAL CHARACTERISTICS (TA = 25°C, All terminals are connected.)
A) N-Channel
Characteristice
Symbol
Test Conditions
Zero Gate Voltage Drain Current
IDSS
VDS = 20 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS = ±12 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
MIN.
VGS(off)
VDS = 10 V, ID = 1 mA
0.5
| yfs |
VDS = 10 V, ID =1.5 A
1.0
TYP.
1.0
MAX.
Unit
10
µA
±10
µA
1.5
V
S
RDS(on)1
VGS = 4.5 V, ID = 1.5 A
55
69
mΩ
RDS(on)2
VGS = 4.0 V, ID = 1.5 A
57
72
mΩ
RDS(on)3
VGS = 2.5 V, ID = 1.0 A
78
107
mΩ
Input Capacitance
Ciss
VDS = 10 V
160
pF
Output Capacitance
Coss
VGS = 0 V
60
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
40
pF
Turn-on Delay Time
td(on)
VDD = 10 V, ID = 1.5 A
17
ns
tr
VGS = 4.0 V
50
ns
td(off)
RG = 10 Ω
86
ns
80
ns
Rise Time
Turn-off Delay Time
Fall Time
tf
Total Gate Charge
QG
VDD = 16 V
3.1
nC
Gate to Source Charge
QGS
VGS = 4.0 V
0.7
nC
Gate to Drain Charge
QGD
ID = 3.0 A
1.4
nC
IF = 3.0 A, VGS = 0 V
0.86
V
Body Diode Forward Voltage
VF(S-D)
Reverse Recovery Time
trr
IF = 3 A, VGS = 0 V
70
ns
Reverse Recovery Charge
Qrr
di/dt = 50 A/µs
12
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
VGS
RL
VGS
RG
PG.
Wave Form
0
VGS
10%
IG = 2 mA
RL
50 Ω
VDD
90%
PG.
VDD
VDS
90%
90%
VDS
VGS
0
VDS
τ
τ = 1 µs
Duty Cycle ≤ 1%
10%
0
10%
Wave Form
td(on)
tr
ton
td(off)
tf
toff
DataSheet G16059EJ1V0DS
3
µPA1793
B) P-Channel
Characteristics
Symbol
Test Conditions
Zero Gate Voltage Drain Current
IDSS
VDS = –20 V, VGS = 0 V
Gate Leakage Current
IGSS
VGS =
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
MIN.
TYP.
m 12 V, VDS = 0 V
–1.0
MAX.
Unit
–10
µA
m 10
µA
–1.5
V
VGS(off)
VDS = –10 V, ID = –1 mA
–0.5
| yfs |
VDS = –10 V, ID = –1.5 A
1.0
RDS(on)1
VGS = –4.5 V, ID = –1.5 A
75
115
mΩ
RDS(on)2
VGS = –4.0 V, ID = –1.5 A
80
120
mΩ
RDS(on)3
VGS = –2.5 V, ID = –1.0 A
116
190
mΩ
S
Input Capacitance
Ciss
VDS = –10 V
370
pF
Output Capacitance
Coss
VGS = 0 V
110
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
40
pF
Turn-on Delay Time
td(on)
VDD = –10 V, ID = –1.5 A
120
ns
VGS = –4.0 V
260
ns
RG = 10 Ω
410
ns
360
ns
Rise Time
tr
Turn-off Delay Time
td(off)
Fall Time
tf
Total Gate Charge
QG
VDD = –10 V
3.4
nC
Gate to Source Charge
QGS
VGS = –4.0 V
1.3
nC
Gate to Drain Charge
QGD
ID = –3.0 A
1.6
nC
IF = 3.0 A, VGS = 0 V
0.86
V
Body Diode Forward Voltage
VF(S-D)
Reverse Recovery Time
trr
IF = 3 A, VGS = 0 V
24
ns
Reverse Recovery Charge
Qrr
di/dt = 10 A/µs
1.5
nC
TEST CIRCUIT 1 SWITCHING TIME
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
D.U.T.
VGS (−)
RL
VGS
RG
PG.
Wave Form
0
VGS
10%
PG.
VDD
90%
τ
τ = 1 µs
Duty Cycle ≤ 1%
4
90%
VDS
VDS
10%
0
10%
Wave Form
td(on)
tr
ton
RL
50 Ω
VDD
90%
VDS (−)
VGS (−)
0
IG = −2 mA
td(off)
tf
toff
DataSheet G16059EJ1V0DS
µPA1793
TYPICAL CHARACTERISTICS (TA = 25°C)
A) N-Channel
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
2.8
Mounted on ceramic substrate of
2
5500 mm x 2.2 mm
100
80
60
40
20
2.4
2 units
2
1.6
1.2
1 unit
0.8
0.4
0
0
0
25
50
75
100
125
150
0
175
25
TA - Ambient Temperature - °C
50
75
100
125
150
175
TA - Ambient Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
Mounted on ceramic substrate
2
of 5500 mm x 2.2 mm , 1 unit
I D(pulse)
PW = 100 µs
ID(DC)
DC
1
1 ms
10 m s
R DS(on) limited
(at V GS = 4.5 V)
100 m s
Power dissipation
limited
0.1
T A = 25°C
Single pulse
0.01
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
10
100
Rth(ch-A) = 73.5°C/W
10
1
0.1
Mounted on ceramic substrate of
2
5500 mm x 2.2 mm
Single pulse, 1 unit, TA = 25°C
0.01
100 µ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
DataSheet G16059EJ1V0DS
5
µPA1793
A) N-Channel
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
10
14
V DS = 10 V
Pulsed
V GS = 4.5 V
12
ID - Drain Current - A
ID - Drain Current - A
4.0 V
1
T ch = 125°C
75°C
25°C
−25°C
0.1
10
8
2.5 V
6
4
Pulsed
2
0.01
0
0
1
2
3
0
0.5
1
VGS - Gate to Source Voltage - V
V DS = 10 V
Pulsed
10
T ch = 125°C
75°C
25°C
−25°C
0.1
1
10
ID = 3 A
150
100
1.5 A
50
Pulsed
0
0
2
4
6
8
10
12
VGS - Gate to Source Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
150
1.2
VGS(off) - Gate Cut-off Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
3
200
ID - Drain Current - A
100
V GS = 2.5 V
4.0 V
50
4.5 V
Pulsed
0
1
0.8
0.6
0.4
V DS = 10 V
ID = 1 mA
0.2
0
0.1
1
10
100
-50
0
50
100
Tch - Channel Temperature - °C
ID - Drain Current - A
6
2.5
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
| yfs | - Forward Transfer Admittance - S
100
0.1
0.01
2
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
1.5
DataSheet G16059EJ1V0DS
150
µPA1793
A) N-Channel
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
150
100
IF - Diode Forward Current - A
100
V GS = 2.5 V
4.0 V
4.5 V
50
10
V GS = 4.5 V
1
0V
0.1
Pulsed
Pulsed
0.01
0
-50
0
50
100
0
150
0.5
Tch - Channel Temperature - °C
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
1000
V GS = 0 V
f = 1 MHz
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
1000
C iss
100
C oss
C rss
10
V DD = 10 V
V GS = 4 V
R G = 10 Ω
td(off)
100
tf
tr
t d(on)
10
1
0.1
1
10
100
0.1
1
10
100
ID - Drain Current - A
VDS - Drain to Source Voltage - V
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
DYNAMIC INPUT/OUTPUT CHARACTERITICS
1000
20
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
1
100
10
di/dt = 50 A/µs
V GS = 0 V
5
V DD = 16 V
10 V
4V
16
4
12
3
V GS
8
4
2
1
V DS
ID = 3 A
1
0
0.1
1
10
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. CHANNEL TEMPERATURE
100
IF - Diode Forward Current - A
0
0
1
2
3
4
QG - Gate Charge - nC
DataSheet G16059EJ1V0DS
7
µPA1793
B) P-Channel
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
2.8
Mounted on ceramic substrate of
5500 mm 2 x 2.2 m m
100
80
60
40
20
2.4
2
2 units
1.6
1.2
1 unit
0.8
0.4
0
0
0
25
50
75
100
125
150
175
0
25
TA - Ambient Temperature - °C
50
75
100
FORWARD BIAS SAFE OPERATING AREA
Mounted on ceram ic substrate
2
of 5500 m m x 2.2 mm , 1 unit
PW = 100 µs
ID - Drain Current - A
- 10
ID(DC)
1 ms
-1
DC
10 ms
R DS(on) limited
(at V GS = −4.5 V)
- 0.1
100 ms
Power dissipation
limited
T A = 25°C
Single pulse
- 0.01
- 0.1
-1
- 10
- 100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t) - Transient Thermal Resistance - °C/W
100 0
100
R th(ch-A ) = 7 3.5 °C /W
10
1
0.1
M oun ted o n ceram ic sub strate of
2
550 0 m m x 2.2 m m
S ingle pulse, 1 un it, T A = 2 5°C
0.01
100 µ
1m
10 m
100 m
1
PW - Pulse Width - s
8
150
TA - Ambient Temperature - °C
- 100
ID(pulse)
125
DataSheet G16059EJ1V0DS
10
100
1000
175
µPA1793
B) P-Channel
FORWARD TRANSFER CHARACTERISTICS
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
- 14
- 10
V GS = −4.5 V
- 12
ID - Drain Current - A
ID - Drain Current - A
V DS = −10 V
Pulsed
-1
T ch = 125°C
75°C
25°C
−25°C
- 0.1
−4.0 V
- 10
-8
−2.5 V
-6
-4
-2
Pulsed
- 0.01
0
0
-1
-2
-3
0
- 0.5
VGS - Gate to Source Voltage - V
V DS = −10 V
Pulsed
10
T ch = 125°C
75°C
25°C
−25°C
- 0.1
-1
- 10
250
200
150
100
− 1 .5 A
50
P u ls e d
0
0
- 1.2
200
V G S = − 2 .5 V
− 4 .0 V
− 4 .5 V
P u ls e d
- 10
VGS(off) - Gate Cut-off Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
250
- 1
- 4
- 6
- 8
- 10
- 12
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
- 1.4
0
- 0 .1
- 2
VGS - Gate to Source Voltage - V
300
50
-3
ID = − 3 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
100
- 2.5
300
ID - Drain Current - A
150
-2
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
| yfs | - Forward Transfer Admittance - S
100
0.1
- 0.01
- 1.5
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
1
-1
-1
- 0.8
- 0.6
- 0.4
V D S = −10 V
I D = −1 m A
- 0.2
- 100
0
-50
0
50
100
150
Tch - Channel Temperature - °C
ID - Drain Current - A
DataSheet G16059EJ1V0DS
9
µPA1793
) P-Channel
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
200
- 100
150
IF - Diode Forward Current - A
V G S = − 2 .5 V
− 4 .0 V
100
− 4 .5 V
50
- 10
V GS = −4.5 V
-1
0V
- 0.1
P u ls e d
Pulsed
- 0.01
0
-5 0
0
50
100
0
150
Tch - Channel Temperature - °C
0.5
VF(S-D) - Source to Drain Voltage - V
CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
SWITCHING CHARACTERISTICS
10 00 0
C iss
100
C oss
C rss
VGS = 0 V
f = 1 M Hz
-1
- 10
V D D = -1 0 V
V G S = −4 V
R G = 10 Ω
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Coss, Crss - Capacitance - pF
1000
10
- 0.1
10 00
t d(off)
tf
tr
10 0
t d(on)
10
- 0.1
- 100
-1
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
- 20
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
- 10 0
DYNAMIC INPUT/OUTPUT CHARACTERITICS
100
10
-5
ID = 3 A
V D D = 16 V
10 V
4V
- 16
-4
- 12
di/dt = 10 A/µs
V GS = 0 V
-3
VGS
-8
-2
-4
-1
VDS
0
-1
- 10
- 100
IF - Diode Forward Current - A
10
- 10
ID - Drain Current - A
VDS - Drain to Source Voltage - V
1
- 0.1
1
0
0
1
2
QG - Gate Charge - nC
DataSheet G16059EJ1V0DS
3
4
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
µPA1793
[MEMO]
DataSheet G16059EJ1V0DS
11
µPA1793
• The information in this document is current as of September, 2002. The information is subject to
change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or
data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all
products and/or types are available in every country. Please check with an NEC sales representative
for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without prior
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.
• NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of
third parties by or arising from the use of NEC semiconductor products listed in this document or any other
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any
patents, copyrights or other intellectual property rights of NEC or others.
• Descriptions of circuits, software and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these
circuits, software and information in the design of customer's equipment shall be done under the full
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third
parties arising from the use of these circuits, software and information.
• While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize
risks of damage to property or injury (including death) to persons arising from defects in NEC
semiconductor products, customers must incorporate sufficient safety measures in their design, such as
redundancy, fire-containment, and anti-failure features.
• NEC semiconductor products are classified into the following three quality grades:
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products
developed based on a customer-designated "quality assurance program" for a specific application. The
recommended applications of a semiconductor product depend on its quality grade, as indicated below.
Customers must check the quality grade of each semiconductor product before using it in a particular
application.
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio
and visual equipment, home electronic appliances, machine tools, personal electronic equipment
and industrial robots
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems and medical equipment for life support, etc.
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness
to support a given application.
(Note)
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for
NEC (as defined above).
M8E 00. 4