CCS020M12CM2 1.2kV, 80 mΩ Silicon Carbide Six-Pack (Three Phase) Module C2M MOSFET and Z-Rec® Diode 1.2 kV RDS(on) 80 mΩ Esw, Total @ 20A, 150 ˚C Features • • • • • • • VDS 0.48 mJ Package Ultra Low Loss High-Frequency Operation Zero Reverse Recovery Current from Diode Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Ease of Paralleling Copper Baseplate and Aluminum Nitride Insulator System Benefits • • • • • Enables Compact and Lightweight Systems High Efficiency Operation Mitigates Over-voltage Protection Reduced Thermal Requirements Reduced System Cost Applications • • • • • Solar Inverter 3-Phase PFC Regen Drive UPS and SMPS Motor Drive Part Number Package Marking CCS020M12CM2 Six-Pack CCS020M12CM2 Maximum Ratings (TC = 25˚C unless otherwise specified) Symbol 2,Rev. - Value Unit Test Conditions VDSmax Drain - Source Voltage 1.2 kV VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/20 V Recommended operational values ID S020M12CM Datasheet: CC Parameter ID(pulse) Continuous MOSFET Drain Current Pulsed Drain Current 29.5 20 80 A A 46 IF TJmax TC ,TSTG Continuous Diode Forward Current 27 A Junction Temperature -40 to +150 ˚C Case and Storage Temperature Range -40 to +125 ˚C VGS = 20 V, TC = 25 ˚C VGS = 20 V, TC = 90 ˚C Notes Fig. 25 Pulse width tp limited by TJ(max) VGS = -5 V, TC = 25 ˚C VGS = -5 V, TC = 90 ˚C Visol Case Isolation Voltage 4.5 kV AC, 50 Hz , 1 min LStray Stray Inductance 30 nH Measured between terminals 25, 26 and 27, 28 PD Power Dissipation 167 W TC = 25 ˚C, TJ = 150 ˚C Subject to change without notice. www.cree.com Fig. 26 1 Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter Min. V(BR)DSS Drain - Source Breakdown Voltage VGS(th) Gate Threshold Voltage Typ. Max. 1.2 1.7 Unit kV 2.2 V 1.6 Test Conditions VGS, = 0 V, ID = 100 µA VDS = 10 V, ID = 1 mA Zero Gate Voltage Drain Current 1 100 μA VDS = 1.2 kV, VGS = 0V IDSS Zero Gate Voltage Drain Current 10 250 μA VDS = 1.2 kV, VGS = 0V,TJ = 150 ˚C IGSS Gate-Source Leakage Current 1 250 nA VGS = 20 V, VDS = 0V On State Resistance 80 98 145 208 9.8 mΩ VGS = 20 V, IDS = 20 A Fig. 4-6 VGS = 20 V, IDS = 20 A, TJ = 150 ˚C VDS = 20 V, IDS = 20 A gfs Transconductance Ciss Input Capacitance 900 Coss Output Capacitance 181 Crss Reverse Transfer Capacitance 5.9 Eon Turn-On Switching Energy 0.41 mJ EOff Turn-Off Switching Energy 0.07 mJ 3.8 Ω f = 1 MHz, VAC = 25 mV nC VDD= 800 V, VGS = -5V/+20V, ID= 20 A, Per JEDEC24 pg 27 Fig. 15 VDD = 800V, VGS = -5/+20V, ID = 20 A, RG(ext) = 2.5 Ω, Timing relative to VDS Note: IEC 60747-8-4, pg 83 Resistive load Fig. 24 IF = 20 A, VGS = 0, TJ = 25 ˚C Fig. 10 IF = 20 A, VGS = 0, TJ = 150 ˚C Fig. 11 RG (int) S Fig. 7 VDS = 10 V, ID = 1 mA, TJ = 150 ˚C IDSS RDS(on) Note 8.5 Internal Gate Resistance pF QGS Gate-Source Charge 16.1 QGD Gate-Drain Charge 20.7 QG Total Gate Charge 61.5 td(on) Turn-on delay time 10 ns tr(on) VSD fall time 90% to 10% td(off) Turn-off delay time tf(off) VSD rise time 10% to 90% VSD Diode Forward Voltage QC Total Capacitive Charge 14 ns 22.4 ns 53 ns 1.5 1.7 1.8 2.3 0.27 V μC Fig. 8 VDS = 20 V, ID = 20 A, TJ = 150 ˚C VDS = 800 V, f = 1 MHz, VAC = 25 mV Fig. 16,17 VDD = 800 V, VGS = -5V/+20V ID = 20 A, RG(ext) = 2.5 Ω Load = 412 μH, TJ = 150 ˚C Note: IEC 60747-8-4 Definitions Fig. 22 ISD = 20 A, VDS = 800V di/dt = 1500 A/μs, VGS = -5V Thermal Characteristics Symbol Parameter Min. Typ. Max. RthJCM Thermal Resistance Juction-to-Case for MOSFET 0.7 0.75 RthJCD Thermal Resistance Juction-to-Case for Diode 0.8 0.85 Unit Test Conditions Note Fig. 27 ˚C/W Fig. 28 Additional Module Data Symbol Condition Unit Test Condition W Weight 180 g M Mounting Torque 5.0 Nm To Heatsink and terminals 14.09 mm Terminal to terminal 14.11 mm Terminal to terminal 17.46 mm Terminal to baseplate Clearance Distance Creepage Distance 2 Max. CCS020M12CM2,Rev. - Typical Performance 50 Drain-Source Current, IDS (A) 60 Conditions: TJ = -40 °C tp < 200 µs Conditions: TJ = 25 °C tp < 200 µs VGS = 20 V 50 VGS = 16 V VGS = 18 V Drain-Source Current, IDS (A) 60 VGS = 14 V 40 VGS = 12 V 30 20 VGS = 10 V 10 VGS = 20 V VGS = 18 V 40 VGS = 12 V 30 VGS = 10 V 20 10 0 0 1 2 3 4 5 6 7 8 9 0 10 0 1 2 3 Drain-Source Voltage, VDS (V) 60 5 6 7 8 9 10 Figure 2. Output Characteristics TJ = 25 ˚C 2.0 Conditions: TJ = 150 °C tp < 200 µs 50 4 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -40 ˚C VGS = 16 V 1.6 VGS = 18 V 40 Conditions: IDS = 20 A VGS = 20 V tp < 200 µs 1.8 VGS = 14 V VGS = 20 V On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) VGS = 14 V VGS = 16 V VGS = 12 V VGS = 10 V 30 20 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 0 1 2 3 4 5 6 7 8 9 -50 10 -25 0 TJ = 150 °C 150 100 TJ = 25 °C TJ = -40 °C 50 100 125 150 140 120 VGS = 14 V 100 VGS = 16 V VGS = 18 V 80 VGS = 20 V 60 40 20 0 0 0 10 20 30 40 50 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 75 Conditions: IDS = 20 A tp < 200 µs 160 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 180 Conditions: VGS = 20 V tp < 200 µs 200 50 Figure 4. Normalized On-Resistance vs. Temperature Figure 3. Output Characteristics TJ = 150 ˚C 250 25 Junction Temperature, TJ (°C) Drain-Source Voltage, VDS (V) CCS020M12CM2,Rev. - 60 -50 -25 0 25 50 75 100 125 Junction Temperature, TJ (°C) Figure 6. On-Resistance vs. Temperature for Various Various Gate-Source Voltages 150 Typical Performance 3.5 2.5 2.0 1.5 1.0 0.5 30 TJ = 150 °C 25 TJ = 25 °C 20 15 TJ = -40 °C 10 5 0.0 -50 -25 0 25 50 75 100 125 0 150 0 Junction Temperature TJ (°C) -2.5 -2.0 -1.5 -1.0 -0.5 0.0 6 8 10 12 -3.5 -3.0 -2.5 -1.5 -2.0 -1.0 -0.5 0 Condition: TJ = -40 °C tp < 200 µs Drain-Source Current, IDS (A) 4 14 Figure 8. Transfer Characteristic for Various Junction Temperatures -10 -20 VGS = -2 V -30 VGS = -5 V -40 -50 0.0 0 Condition: TJ = 25 °C tp < 200 µs Drain-Source Current, IDS (A) -3.0 2 Gate-Source Voltage, VGS (V) Figure 7. Threshold Voltage vs. Temperature -3.5 Conditions: VDS = 20 V tp < 200 µs 35 Drain-Source Current, IDS (A) 3.0 Threshold Voltage, Vth (V) 40 Conditons VDS = 10 V IDS = 1 mA -10 -20 VGS = -2 V -30 VGS = -5 V -40 VGS = 0 V -50 VGS = 0 V -60 -60 Drain-Source Voltage, VDS (A) Drain-Source Voltage, VDS (A) Figure 10. Diode Characteristic at 25 ˚C Figure 9. Diode Characteristic at -40 ˚C -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 Drain-Source Current, IDS (A) Condition: TJ = 150 °C tp < 200 µs -3.0 0.0 VGS = -2 V -30 VGS = 0 V -2.0 -1.5 -1.0 -0.5 0.0 0 Conditions: TJ = -40 °C tp < 200 µs -10 -20 VGS = -5 V -2.5 0 -40 Drain-Source Current, IDS (A) -3.5 VGS = 0 V -10 VGS = 5 V VGS = 10 V -30 VGS = 20 V -40 -50 -60 Drain-Source Voltage, VDS (A) Figure 11. Diode Characteristic at 150 ˚C 4 CCS020M12CM2,Rev. - -20 VGS = 15 V -50 Drain-Source Voltage, VDS (V) Figure 12. 3rd Quadrant Characteristic at -40 ˚C -60 Typical Performance -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 -3.5 0.0 -3.0 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0 0 Conditions: TJ = 25 °C tp < 200 µs Conditions: TJ = 150 °C tp < 200 µs VGS = 0 V Drain-Source Current, IDS (A) VGS = 5 V -20 VGS = 15 V -30 VGS = 20 V -40 Drain-Source Current, IDS (A) -10 VGS = 10 V VGS = 0 V -10 VGS = 5 V VGS = 20 V VGS = 10 V -20 VGS = 15 V -30 -40 -50 -50 -60 Drain-Source Voltage, VDS (V) Figure 14. 3rd Quadrant Characteristic at 150 ˚C Figure 13. 3rd Quadrant Characteristic at 25 ˚C 25 10000 Conditions: IDS = 20 A IGS = 100 mA VDS = 800 V TJ = 25 °C 20 1000 15 10 5 Coss 100 10 Crss 0 -5 0 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss Capacitance (pF) Gate-Source Voltage, VGS (V) -60 Drain-Source Voltage, VDS (V) 10 20 30 40 50 60 1 70 0 Gate Charge, QG (nC) 150 200 120 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 100 Drain-Source Voltage, VDS (V) Figure 16. Capacitances vs. Drain-Source Voltage (0 - 200 V) Figure 15. Gate Charge Characteristics 10000 50 100 100 Stored Energy, EOSS (µJ) Capacitance (pF) 1000 Coss 10 1 200 400 600 Drain-Source Voltage, VDS (V) 800 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 1 kV) 5 CCS020M12CM2,Rev. - 60 40 20 Crss 0 80 1000 0 0 200 400 600 800 1000 Drain to Source Voltage, VDS (V) Figure 18. Output Capacitor Stored Energy 1200 Typical Performance 0.25 Switching Energy (mJ) 0.8 Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -5/+20 V L = 412 μH 0.2 Conditions: TJ = 25 °C VDD = 800 V RG(ext) = 2.5 Ω VGS = -5/+20 V L = 412 μH 0.7 ETotal 0.6 Switching Energy (mJ) 0.3 EOn 0.15 0.1 EOff 0.05 ETotal 0.5 EOn 0.4 0.3 0.2 EOff 0.1 0 0 0 5 10 15 20 25 30 35 40 45 0 5 10 Drain to Source Current, IDS (A) Figure 19. Inductive Switching Energy vs. Drain Current For VDS = 600V Switching Loss (mJ) 1.0 35 40 45 Conditions: IDS = 20 A VDD = 800 V RG(ext) = 2.5 Ω VGS = -5/+20 V L = 412 µH 0.6 EOn 0.8 0.6 0.4 0.5 ETotal 0.4 EOn 0.3 0.2 EOff 0.1 0.0 EOff 0.0 0 10 20 30 40 50 0 25 50 External Gate Resistor RG(ext) (Ohms) 120 Conditions: TJ = 25 °C RG(ext) = 2.5 Ω IDS = 20 A VGS = -5/+20 V L = 412 μH 0.8 0.7 0.6 100 125 150 175 Figure 22. Inductive Switching Energy vs. Temperature Conditions: TJ = 25 °C VDD = 800 V RL = 40 Ω VGS = -5/+20 V 100 ETotal 80 0.5 Time (ns) 0.9 75 Junction Temperature, TJ (°C) Figure 21. Inductive Switching Energy vs. RG(ext) Switching Loss (mJ) 30 0.7 ETotal 0.2 EOn 0.4 60 tf 40 0.3 0.2 td (off) tr 20 EOff 0.1 td (on) 0 0.0 300 400 500 600 700 800 900 Drain to Source Voltage, VDS (V) Figure 23. Inductive Switching Energy vs. VDS 6 25 0.8 Conditions: TJ = 25 °C VDD = 800 V IDS = 20 A VGS = -5/+20 V L = 412 μH 1.2 20 Figure 20. Inductive Switching Energy vs. Drain Current For VDS = 800V Swithcing Loss (mJ) 1.4 15 Drain to Source Current, IDS (A) CCS020M12CM2,Rev. - 1000 0 5 10 15 20 25 30 35 External Gate Resistor, RG(ext) (Ohms) Figure 24. Timing vs. RG(ext) 40 45 50 Typical Performance 180 Conditions: TJ ≤ 150 °C 45 Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 50 40 35 30 25 20 15 10 5 0 Conditions: TJ ≤ 150 °C 160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 140 -40 -20 0 20 Figure 25. Continuous Drain Current Derating vs. Case Temperature 60 80 100 120 1 Junction To Case Impedance, ZthJC (oC/W) 0.5 0.3 100E-3 0.5 0.3 100E-3 0.1 0.05 0.02 SinglePulse 10E-3 0.01 1E-3 0.1 0.05 0.02 10E-3 SinglePulse 0.01 1E-3 1E-6 10E-6 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 1 10 Figure 27. MOSFET Junction to Case Thermal Impedance 1E-6 10E-6 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 1 10 Figure 28. Diode Junction to Case Thermal Impedance 100.00 100000 10 µs Drain-Source Current, IDS (A) NTC Resistance (Ohms) Limited by RDS On 10000 1000 100 10 -50 -25 0 25 50 75 100 125 NTC Temperature (°C) Figure 29. NTC Resistance vs NTC Temperature 7 140 Figure 26. Maximum Power Dissipation (MOSFET) Derating vs Case Temperature 1 Junction To Case Impedance, ZthJC (oC/W) 40 Case Temperature, TC (°C) Case Temperature, TC (°C) CCS020M12CM2,Rev. - 150 100 µs 10.00 1 ms 100 ms 1.00 0.10 Conditions: TC = 25 °C D = 0, Parameter: tp 0.01 0.1 1 10 100 1000 Drain-Source Voltage, VDS (V) Figure 30. MOSFET Safe Operating Area Figure 31. Resistive Switching Time Description NTC Characteristics Symbol R25 Delta R/R P25 Condition TC = 25 °C Typ. Max. 5 Unit kΩ TC = 100 °C, R100 = 481 Ω ±5 % TC = 25 °C 20 mW B25/50 R2 = R25 exp[B25/50(1/T2-1/(298.15K))] 3380 K B25/80 R2 = R25 exp[B25/80(1/T2-1/(298.15K))] 3440 K 8 CCS020M12CM2,Rev. - Schematic Package Dimensions (mm) CCS020M12CM2 9 CCS020M12CM2,Rev. - Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Module Application Note: The SiC MOSFET module switches at speeds beyond what is customarily associated with IGBT based modules. Therefore, special precautions are required to realize the best performance. The interconnection between the gate driver and module housing needs to be as short as possible. This will afford the best switching time and avoid the potential for device oscillation. Also, great care is required to insure minimum inductance between the module and link capacitors to avoid excessive VDS overshoots. Please Refer to application note: Design Considerations when using Cree SiC Modules Part 1 and Part 2. [CPWR-AN12, CPWR-AN13] Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 10 CCS020M12CM2 Rev - Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power