Transistors SMD Type NPN Silicon Transistors 2SC4942 Features New package with dimensions in between those of small signal and power signal package High voltage Fast switching speed Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO 600 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO 7 V ID(DC) 1 A Collector current (pulse) ID(pulse) *1 2 A Total power dissipation PT *2 2 W Collector current (DC) Junction temperature Tj 150 Storage temperature Tstg -55 to 150 *1 PW 10 ms, duty cycle 50 % 2 *2 7.5 cm X 0.7 mm ceramic board mounted Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector cutoff current ICBO VCB = 600 V, IE = 0 10 ìA Emitter cutoff current IEBO VEB = 7.0 V, IC = 0 10 ìA DC current gain hFE VCE = 5.0 V, IC = 0.1 A 30 55 VCE = 5.0 V, IC = 0.5 A 5 10 120 Collector saturation voltage VCE(sat) IC = 400 mV, IB = 80 mA 0.35 1.0 Base saturation voltage VBE(sat) IC = 400 mV, IB = 80 mA 0.9 1.2 Gain bandwidth product fT VCE = 5.0 V, IE = ?50 mA 30 MHz pF V V Output capacitance Cob VCB = 10 V, IE = 0, f = 1.0 MHz 15 Turn-on time tON IC = 0.5 A, VCC= 250 V 0.1 0.5 ìs Storage time tstg IB1 = ?IB2 = 0.1 A 4.0 5.0 ìs RL = 500Ù 0.2 0.5 ìs Fall time tf hFE Classification Marking AA1 AA2 AA3 hFE 30 to 60 40 to 80 60 to120 www.kexin.com.cn 1