KEXIN 2SC4942

Transistors
SMD Type
NPN Silicon Transistors
2SC4942
Features
New package with dimensions in between those of small
signal and power signal package
High voltage
Fast switching speed
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
600
V
Collector to emitter voltage
VCEO
600
V
Emitter to base voltage
VEBO
7
V
ID(DC)
1
A
Collector current (pulse)
ID(pulse) *1
2
A
Total power dissipation
PT *2
2
W
Collector current (DC)
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
*1 PW
10 ms, duty cycle
50 %
2
*2 7.5 cm X 0.7 mm ceramic board mounted
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 600 V, IE = 0
10
ìA
Emitter cutoff current
IEBO
VEB = 7.0 V, IC = 0
10
ìA
DC current gain
hFE
VCE = 5.0 V, IC = 0.1 A
30
55
VCE = 5.0 V, IC = 0.5 A
5
10
120
Collector saturation voltage
VCE(sat)
IC = 400 mV, IB = 80 mA
0.35
1.0
Base saturation voltage
VBE(sat)
IC = 400 mV, IB = 80 mA
0.9
1.2
Gain bandwidth product
fT
VCE = 5.0 V, IE = ?50 mA
30
MHz
pF
V
V
Output capacitance
Cob
VCB = 10 V, IE = 0, f = 1.0 MHz
15
Turn-on time
tON
IC = 0.5 A, VCC= 250 V
0.1
0.5
ìs
Storage time
tstg
IB1 = ?IB2 = 0.1 A
4.0
5.0
ìs
RL = 500Ù
0.2
0.5
ìs
Fall time
tf
hFE Classification
Marking
AA1
AA2
AA3
hFE
30 to 60
40 to 80
60 to120
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