2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: |Yfs| = 6.5S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage VGSS ±30 V (Note 1) ID 8 Pulse (t = 1 ms) (Note 1) IDP 32 Drain power dissipation (Tc = 25°C) PD 40 W Single pulse avalanche energy (Note 2) EAS 312 mJ Avalanche current IAR 8 A Repetitive avalanche energy (Note 3) EAR 4 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C DC Drain current A 1: Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B Weight : 1.7 g (typ.) Thermal Characteristics Characteristics Symbol Max Unit Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W 2 Note 1: Ensure that the channel temperature does not exceed 150℃. Note 2: VDD = 90 V, Tch = 25°C(initial), L = 8.3 mH, IAR = 8 A, RG = 25 Ω 1 Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Please handle with caution. 3 1 2005-01-26 2SK3561 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Typ. Max Unit ±10 µA VGS = ±25 V, VDS = 0 V ⎯ ⎯ V (BR) GSS IG = ±10 µA, VDS = 0 V ±30 ⎯ ⎯ V IDSS VDS = 500 V, VGS = 0 V ⎯ ⎯ 100 µA ⎯ ⎯ V Drain cut-off current Drain-source breakdown voltage Min IGSS Gate leakage current Gate-source breakdown voltage Test Condition V (BR) DSS ID = 10 mA, VGS = 0 V 500 Vth VDS = 10 V, ID = 1 mA 2.0 ⎯ 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 4 A ⎯ 0.75 0.85 Ω Forward transfer admittance ⎪Yfs⎪ VDS = 10 V, ID = 4 A 3.0 6.5 ⎯ S ⎯ 1050 ⎯ ⎯ 10 ⎯ ⎯ 110 ⎯ VOUT ⎯ 26 ⎯ RL = 50 Ω ⎯ 45 ⎯ ⎯ 38 ⎯ ⎯ 130 ⎯ ⎯ 28 ⎯ ⎯ 16 ⎯ ⎯ 12 ⎯ Gate threshold voltage Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = 25 V, VGS = 0 V, f = 1 MHz Turn-on time ton 50 Ω Switching time Fall time ID = 4 A 10 V VGS 0V tr tf Turn-off time VDD ∼ − 200 V Duty < = 1%, tw = 10 µs toff Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD ∼ − 400 V, VGS = 10 V, ID = 8 A pF ns nC Source-Drain Ratings and Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit (Note 1) IDR ⎯ ⎯ ⎯ 8 A (Note 1) IDRP ⎯ ⎯ ⎯ 32 A IDR = 8 A, VGS = 0 V ⎯ ⎯ −1.7 V Continuous drain reverse current Pulse drain reverse current Forward voltage (diode) VDSF Reverse recovery time trr IDR = 8 A, VGS = 0 V, ⎯ 1200 ⎯ ns Qrr dIDR/dt = 100 A/µs ⎯ 10 ⎯ µC Reverse recovery charge Marking K3561 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2005-01-26 2SK3561 ID – VDS ID – VDS 8 20 COMMON SOURCE 10､15 Tc = 25°C PULSE TEST 5.25 6 10､15 5 DRAIN CURRENT ID (A) DRAIN CURRENT ID (A) 10 4.75 6 4 4.5 4.25 2 0 0 VGS = 4 V 2 4 6 VDS 16 5.5 5 8 4.5 4 (V) 10 20 VDS (V) PULSE TEST DRAIN-SOURCE VOLTAGE DRAIN CURRENT ID (A) VDS = 20 V 12 8 Tc = −55°C 100 25 2 4 6 8 GATE-SOURCE VOLTAGE VGS 10 PULSE TEST 6 ID = 8 A 4 4 2 0 0 2 4 8 12 16 GATE-SOURCE VOLTAGE VGS 20 (V) RDS (ON) – ID Tc = −55°C Tc = −55°C 25 100 25 100 1 COMMON SOURCE VDS = 10 V PULSE TEST 100 10 DRAIN CURRENT ID DRAIN-SOURCE ON RESISTANCE RDS (ON) (Ω) FORWARD TRANSFER ADMITTANCE ⎪Yfs⎪ (S) (V) Tc = 25℃ 8 10 1 VDS COMMON SOURCE ⎪Yfs⎪ – ID 0.1 0.1 50 10 (V) 100 10 40 VDS – VGS COMMON SOURCE 0 0 30 DRAIN-SOURCE VOLTAGE ID – VGS 4 Tc = 25°C PULSE TEST 12 0 0 10 20 16 COMMON SOURCE VGS = 4 V 8 DRAIN-SOURCE VOLTAGE 6 (A) COMMON SOURCE Tc = 25°C PULSE TEST 1 0.1 0.1 VGS = 10 V､15V 1 10 DRAIN CURRENT ID 3 100 (A) 2005-01-26 2SK3561 RDS (ON) – Tc IDR – VDS 100 COMMON SOURCE DRAIN REVERSE CURRENT IDR (A) VGS = 10 V PULSE TEST 1.6 ID = 8 A 1.2 4 0.8 2 0.4 0 −80 −40 0 40 80 CASE TEMPERATURE 120 Tc COMMON SOURCE Tc = 25°C PULSE TEST 10 1 10 5 0.1 0 160 (°C) 3 −0.2 −0.4 CAPACITANCE – VDS −1.2 −1.0 VDS (V) Vth – Tc GATE THRESHOLD VOLTAGE Vth (V) (pF) CAPACITANCE C −0.8 5 Ciss 1000 Coss 100 Crss 10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25°C 1 0.1 1 10 DRAIN-SOURCE VOLTAGE 3 2 COMMON SOURCE 1 (V) VDS (V) DRAIN-SOURCE VOLTAGE 20 CASE TEMPERATURE −40 0 40 80 120 Tc 160 (°C) DYNAMIC INPUT / OUTPUT CHARACTERISTICS 40 80 PULSE TEST CASE TEMPERATURE 60 40 VDS = 10 V ID = 1 mA 0 −80 100 VDS 4 PD – Tc DRAIN POWER DISSIPATION PD (W) −0.6 DRAIN-SOURCE VOLTAGE 10000 0 0 VGS = 0, −1 V 1 120 Tc 160 (°C) 500 20 VDS 400 16 VDD = 100 V 400 300 12 200 200 8 VGS 100 COMMON SOURCE ID = 8 A PULSE TEST 0 0 10 20 0 50 40 30 TOTAL GATE CHARGE 4 4 Tc = 25°C Qg GATE-SOURCE VOLTAGE VGS (V) DRAIN-SOURCE ON RESISTANCE RDS (ON) ( Ω) 2.0 (nC) 2005-01-26 2SK3561 NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c) rth – tw 10 1 Duty=0.5 0.2 0.1 0.1 0.05 PDM 0.02 t 0.01 0.01 T SINGLE PULSE Duty = t/T Rth (ch-c) = 3.125°C/W 0.001 10μ 100μ 1ｍ 10ｍ PULSE WIDTH 100ｍ tw 1 10 (s) SAFE OPERATING AREA EAS – Tch 100 500 ID max (PULSED) * 10 AVALANCHE ENERGY EAS (mJ) DRAIN CURRENT ID (A) 100 µs * ID max (CONTINUOUS) * 1 ms * 1 DC OPERATION Tc = 25°C ※ SINGLE NONREPETITIVE PULSE 0.1 LINEARLY MUST WITH BE DERATED INCREASE 200 100 50 75 100 125 150 CHANNEL TEMPERATURE (INITIAL) Tch (°C) IN TEMPERATURE. 0.01 1 300 0 25 Tc=25℃ CURVES 400 VDSS max 10 100 DRAIN-SOURCE VOLTAGE 1000 VDS 15 V (V) BVDSS IAR −15 V VDD TEST CIRCUIT RG = 25 Ω VDD = 90 V, L = 8.3mH 5 VDS WAVE FORM Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2005-01-26 2SK3561 RESTRICTIONS ON PRODUCT USE 030619EAA • The information contained herein is subject to change without notice. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2005-01-26