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The 2SA1652 is a mold power transistor developed for high-
PACKAGE DRAWING (UNIT: mm)
speed switching and features a very low collector-to-emitter
saturation.
This transistor is ideal for use in switching power
supplies, DC/DC converters, motor drivers, solenoid drivers, and
other low-voltage power supply devices, as well as for high-current
switching.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• Fast switching speed
• Low collector-to-emitter saturation voltage:
VCE(sat) ≤ −0.3 V (MAX.) @IC = −6 A
QUALITY GRADES
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• Standard
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Please refer to “Quality Grades on NEC Semiconductor Devices”
!&ROOHFWRU
!(PLWWHU
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
Parameter
Symbol
Conditions
Ratings
Unit
Collector to base voltage
VCBO
−150
V
Collector to emitter voltage
VCEO
−100
V
Emitter to base voltage
VEBO
−7.0
V
Collector current
IC(DC)
−10
A
Collector current
IC(pulse)
−20
A
Base current
IB(DC)
−6.0
A
PW ≤ 300 µs, duty cycle ≤ 10%
Total power dissipation
PT
Tc = 25°C
25
W
Total power dissipation
PT
Ta = 25°C
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
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2002
2SA1652
ELECTRICAL CHARACTERISTICS (Ta = 25°°C)
Parameter
Symbol
Conditions
MIN.
MAX.
Unit
−10
µA
−10
µA
Collector cutoff current
ICBO
Emitter cutoff current
IEBO
VEB = −5 V, IC = 0
DC current gain
hFE1*
VCE = −2 V, IC = −0.5 A
100
DC current gain
hFE2*
VCE = −2 V, IC = −2 A
100
DC current gain
hFE3*
VCE = −2 V, IC = −6 A
60
Collector saturation voltage
VCE(sat)1*
IC = −6 A, IB = −0.3 A
−0.3
V
Collector saturation voltage
VCE(sat)2*
IC = −8 A, IB = −0.4 A
−0.5
V
Base saturation voltage
VBE(sat)1*
IC = −6 A, IB = −0.3 A
−1.2
V
Base saturation voltage
VBE(sat)2*
IC = −8 A, IB = −0.4 A
−1.5
Gain bandwidth product
fT
−
400
−
−
V
VCE = −10 V, IC = −0.5 A
150
MHz
Collector capacitance
Cob
VCB = −10 V, IE = 0, f = 1 MHz
250
pF
Turn-on time
ton
0.3
µs
Storage time
tstg
IC = −6 A, IB1 = −IB2 = −0.3 A,
RL = 8.3 Ω, VCC = −50 V
Refer to the test circuit.
1.5
µs
0.4
µs
Fall time
tf
* Pulse test PW ≤ 350 µs, duty cycle ≤ 2%
hFE CLASSIFICATION
Marking
M
L
K
hFE2
100 to 200
150 to 300
200 to 400
SWITCHING TIME TEST CIRCUIT
Base current
waveform
Collector current
waveform
2
TYP.
VCB = −100 V, IE = 0
Data Sheet D16123EJ1V0DS
2SA1652
IC Derating dT (%)
Total Power Dissipation PT (W)
TYPICAL CHARACTERISTICS (Ta = 25°°C)
Case Temperature TC (°C)
Collector Current IC (A)
Single pulse
Collector to Emitter Voltage VCE (V)
Transient Thermal Resistance rth(j−c)(t) (°C/W)
Case Temperature TC (°C)
Ta = 25 °C (without heatsink)
(with infinite heatsink)
Single pulse
Pulse Width PW (s)
DC Current Gain hFE
Collector Current IC (A)
Pulse test
Collector to Emitter Voltage VCE (V)
Data Sheet D16123EJ1V0DS
Collector Current IC (A)
3
Turn-On Time ton (µs)
StorageTime tstg (µs)
Fall Time tf (µs)
4
Collector Capacitance Cob (pF)
Gain Bandwidth Product fT (MHz)
Collector Saturation Voltage VCE(sat) (V)
Pulse test
Base Saturation Voltage VBE(sat) (V)
2SA1652
Collector Current IC (A)
Collector Current IC (A)
Collector Current IC (A)
Data Sheet D16123EJ1V0DS
Pulse test
Collector Current IC (A)
Collector to Base Voltage VCB (V)
2SA1652
[MEMO]
Data Sheet D16123EJ1V0DS
5
2SA1652
• The information in this document is current as of July, 2001. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products
and/or types are available in every country. Please check with an NEC sales representative for
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M8E 00. 4